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Winbond Electronics Corporation W631GG6MB-11 TR
- Part No.:
- W631GG6MB-11 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-VFBGA
- Datasheet:
-
W631GG6MB-11 TR.pdf
- Description:
- IC DRAM 1GBIT PAR 96VFBGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
W631GG6MB-11 TR from Winbond is a 1Gbit (8M × 8 banks × 16-bit) DDR3 SDRAM compliant with JEDEC DDR3-1866 (13-13-13) timing, operating at 1.5V supply, supporting CAS Latency 5–13 and programmable CWL 5–7, used in embedded computing, industrial control, and network infrastructure memory subsystems.
For engineers reviewing the W631GG6MB-11 TR datasheet, W631GG6MB-11 TR pinout, W631GG6MB-11 TR application, or W631GG6MB-11 TR equivalent, this device requires attention to tRCD/tRP = 13.91 ns min, VDD/VDDQ = 1.5V ± 75 mV, ZQ calibration support, asynchronous RESET#, and SSTL_15 I/O interface compatibility.
Technical Context
This DDR3 SDRAM implements an 8-bank architecture with 8-bit prefetch, DLL-aligned DQ/DQS timing, and source-synchronous differential strobe (DQS/DQS#) for both read (edge-aligned) and write (center-aligned) operations. It supports posted CAS with AL = 0, CL−1, or CL−2, yielding RL = AL + CL and WL = AL + CWL.
Key operational modes include Auto Precharge, Self-Refresh, Partial Array Self Refresh (PASR), and dual Power-Down states (Precharged/Active). ODT is programmable via MR1/MR2 with synchronous, dynamic, and asynchronous modes, and ZQ calibration uses an external 240 Ω resistor for output driver and termination tuning.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gbit (8,388,608 words × 8 banks × 16 bits) |
| Data Rate | DDR3-1866: 1866 MT/s (fCK = 933 MHz) |
| CAS Latency | CL = 5, 6, 7, 8, 10, 13 (JEDEC-compliant for -11 grade) |
| CAS Write Latency | CWL = 5, 6, 7 (programmable per frequency) |
| Supply Voltage | VDD/VDDQ = 1.5 V ± 0.075 V (SSTL_15 compatible) |
| Timing (tRCD/tRP) | 13.91 ns minimum (13-13-13 bin) |
| Operating Temp | 0°C ≤ TCASE ≤ 95°C (commercial extended range) |
| Package | VFBGA-96 (7.5 mm × 13 mm, 1.0 mm height, RoHS/lead-free) |
Pinout & Package
VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and RoHS-compliant lead-free construction. Ball map conforms to JEDEC MO-273 standard for DDR3 SDRAM.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A14 | Address Inputs | Row/column address for bank and page access; A10 controls auto-precharge |
| BA0–BA2 | Bank Address | Selects one of eight internal banks for concurrent operation |
| CK/CK# | Differential Clock | Edge-triggered command latching at cross-point; defines system clock domain |
| DQ0–DQ15 | Data I/O | 16-bit bidirectional data bus; SSTL_15 compatible, edge-aligned on reads |
| DQS/DQS# | Differential Strobe | Source-synchronous strobe; center-aligned on writes, edge-aligned on reads |
| DM0–DM1 | Data Mask | Per-byte write masking for DQ0–7 and DQ8–15 during burst writes |
| RESET# | Asynchronous Reset | Initiates power-up sequence or mode register reset independent of clock |
| ODT | On-Die Termination Control | Enables/disables programmable termination resistors on DQ/DQS/DM lines |
| WE#/CAS#/RAS# | Command Inputs | Standard DDR3 command encoding (active-low, sampled on CK rising edge) |
| VDD/VDDQ | Power Supplies | Separate 1.5 V supplies for core (VDD) and I/O (VDDQ); decoupling required per JEDEC |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CWL | Supports CWL = 5, 6, 7 to match system clock frequency and optimize write timing margins |
| ZQ Calibration | Uses external 240 Ω reference resistor to calibrate output driver strength and ODT impedance over voltage/temperature |
| Dynamic ODT | Enables Rtt_WR termination during write bursts only, improving signal integrity without affecting read paths |
| Write Leveling | Allows controller to calibrate DQS-to-CK skew per rank, critical for reliable high-speed write capture |
| Multi-Purpose Register | Provides predefined MPR pattern for system-level timing calibration and margin testing |
| PASR & ASR | Reduces self-refresh current by refreshing only active banks (PASR) or scaling refresh rate with temperature (ASR) |
Applications
| Industrial PLC Memory | Network Switch Buffer |
|---|---|
Use Scenario: Real-time deterministic control logic execution with persistent data logging in programmable logic controllers. IC Role / Device Role / Timing Role: Primary working memory for firmware execution and I/O buffer storage; operates under 0°C to 95°C ambient with DDR3-1866 bandwidth. Use Value: Enables 1866 MT/s throughput for multi-threaded ladder logic scanning while maintaining JEDEC-compliant tRCD/tRP = 13.91 ns timing stability across temperature. | Use Scenario: Packet buffering and forwarding in Layer 2/Layer 3 Ethernet switches with 10/25/40 GbE uplinks. IC Role / Device Role / Timing Role: Shared packet buffer memory accessed concurrently by multiple MAC engines and CPU cores via DDR3 controller. Use Value: 8-bank interleaving and burst-8 capability deliver sustained bandwidth >12 GB/s; PASR reduces idle power in low-traffic periods. |
| Medical Imaging Controller | Video Surveillance DVR |
Use Scenario: High-resolution ultrasound or MRI image reconstruction requiring low-latency frame buffering and DMA transfers. IC Role / Device Role / Timing Role: Frame buffer and intermediate processing memory interfaced to FPGA-based imaging pipeline with strict tAA ≤ 13.91 ns read latency. Use Value: CL = 13 support enables stable operation at 933 MHz while accommodating FPGA timing closure constraints and thermal derating. | Use Scenario: Multi-channel HD video encode/decode and motion detection in embedded NVR systems with 4–16 camera inputs. IC Role / Device Role / Timing Role: Unified memory for video codec engines, AI inference accelerators, and OS runtime; operates continuously at elevated case temperatures. Use Value: Extended 95°C case rating and ASR mode ensure reliable self-refresh during thermal stress; SSTL_15 interface ensures signal integrity on dense PCB layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K128M16HA-125:E | 1 Gbit DDR3L (1.35 V), -125 speed grade (DDR3L-1600), 96-ball FBGA, same pinout but lower voltage | Targets ultra-low-power systems where 1.35 V operation reduces total memory subsystem power | Select when board design supports DDR3L voltage scaling and thermal budget permits 1600 MT/s instead of 1866 MT/s |
| IS43TR16128B-125KBL | 1 Gbit DDR3, -125 speed grade (DDR3-1600), 96-ball FBGA, identical voltage (1.5 V) but different AC timing margins | Offers tighter tRCD/tRP = 11 ns min and higher reliability qualification (industrial temp range -40°C to 95°C) | Choose for designs requiring guaranteed 1600 MT/s performance with broader industrial temperature coverage than W631GG6MB-11 TR |
Compared with MT41K128M16HA-125:E and IS43TR16128B-125KBL, the W631GG6MB-11 TR delivers higher bandwidth (1866 MT/s vs. 1600 MT/s) at standard 1.5 V, making it optimal for performance-critical industrial compute where voltage headroom exists and thermal management supports 95°C case operation.
Availability
W631GG6MB-11 TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging systems requiring stable component supply, long-lifecycle support, and JEDEC-compliant DDR3-1866 performance.
Supply support for W631GG6MB-11 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, DRAM, and mobile RAM.
The W631GG6MB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed for robust operation in extended temperature environments and mission-critical embedded systems requiring JEDEC compliance and long-term supply stability.
FAQ
What is the maximum data rate supported by the W631GG6MB-11 TR?
The W631GG6MB-11 TR supports DDR3-1866 operation at 1866 MT/s, corresponding to a clock frequency of 933 MHz. This is validated under JEDEC conditions with tRCD/tRP = 13.91 ns minimum and CL = 13, and requires stable 1.5 V ± 75 mV supply and proper PCB layout for signal integrity. The W631GG6MB-11 TR achieves this rate using its 8-bit prefetch architecture and DLL-aligned DQS-to-clock timing.
Does the W631GG6MB-11 TR support automatic self-refresh (ASR)?
Yes, the W631GG6MB-11 TR supports Auto Self-Refresh (ASR) via Mode Register MR2 bit A6. When enabled, ASR dynamically adjusts the refresh interval based on junction temperature-doubling refresh rate (tREFI = 3.9 µS) above 85°C to maintain data retention. This feature is essential for reliable operation in high-temperature industrial environments where the W631GG6MB-11 TR is rated up to 95°C case temperature.
What package type and ball count does the W631GG6MB-11 TR use?
The W631GG6MB-11 TR uses a VFBGA-96 package measuring 7.5 mm × 13 mm with 1.0 mm thickness and 0.8 mm ball pitch. It is RoHS-compliant and lead-free, conforming to JEDEC MO-273. The 96-ball layout includes dedicated DQ, DQS, address, command, and power/ground terminals optimized for DDR3 signal integrity and thermal dissipation in high-density PCB designs.
Can the W631GG6MB-11 TR be used with DDR3L controllers?
No-the W631GG6MB-11 TR is a standard DDR3 (1.5 V) device and is not compatible with DDR3L (1.35 V) controllers unless the controller explicitly supports 1.5 V operation. Its VDD/VDDQ specification is 1.5 V ± 0.075 V, and applying 1.35 V will result in functional failure. For DDR3L compatibility, consider alternatives like Micron MT41K128M16HA-125:E, not the W631GG6MB-11 TR.
How does write leveling work on the W631GG6MB-11 TR?
Write leveling on the W631GG6MB-11 TR is a training sequence where the memory controller adjusts DQS delay to align DQS edges with CK for accurate write capture. The W631GG6MB-11 TR responds with a fixed MPR pattern during write leveling mode, allowing the controller to detect phase offset. This process compensates for board skew and ensures setup/hold timing compliance at 1866 MT/s, and is mandatory before normal write operations begin.
W631GG6MB-11 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.425V ~ 1.575V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-VFBGA (7.5x13)
W631GG6MB-11 TR FAQ
1.How can I place an order for W631GG6MB-11 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GG6MB-11 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GG6MB-11 TR reliable?
The price and inventory of W631GG6MB-11 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GG6MB-11 TR is usually 5 days.
3.What payment methods are accepted for W631GG6MB-11 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GG6MB-11 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GG6MB-11 TR?
W631GG6MB-11 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GG6MB-11 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GG6MB-11 TR?
For technical support, including W631GG6MB-11 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GG6MB-11 TR requirements.
6.How does Aetrix verify that W631GG6MB-11 TR is sourced from the original manufacturer or authorized distributors?
All W631GG6MB-11 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GG6MB-11 TR meets industry standards.
7.What is the process for return or replacement of W631GG6MB-11 TR?
All W631GG6MB-11 TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GG6MB-11 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GG6MB-11 TR part is unused and in its original packaging.
Return procedure for W631GG6MB-11 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GG6MB-11 TR Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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Microchip Technology
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