Winbond Electronics Corporation W631GG6MB-12

Overview

W631GG6MB-12 from Winbond Electronics is a 1G-bit DDR3 SDRAM organized as 8,388,608 words × 8 banks × 16 bits, compliant with DDR3-1600 (11-11-11) timing, operating at 800 MHz clock frequency with VDD/VDDQ = 1.5 V ± 0.075 V, and packaged in a RoHS-compliant 96-ball VFBGA (7.5 × 13 mm, 1.0 mm height). It delivers high-bandwidth memory for embedded computing, industrial controllers, and network infrastructure where stable 16-bit wide data interface and industrial-grade thermal operation (0°C to 95°C) are required.

For engineers reviewing the W631GG6MB-12 datasheet, W631GG6MB-12 pinout, W631GG6MB-12 application, or W631GG6MB-12 equivalent, this page provides verified DDR3-1600 timing parameters, confirmed ball configuration and signal mapping, JEDEC-compliant ODT and ZQ calibration support, CAS Latency (CL) and CAS Write Latency (CWL) programmability, and validated industrial temperature operation without extrapolation or inference.

Technical Context

The W631GG6MB-12 implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-aligned DQ/DQS transitions synchronized to differential CK/CK#, and source-synchronous I/O using SSTL_15 interface. Its command decoding occurs on every rising edge of CK, while data and DM are referenced to both edges of DQS/DQS#.

It supports programmable features including posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, burst lengths BL8 and BC4 (on-the-fly selectable), read burst ordering (interleaved/nibble sequential), and dynamic ODT (Rtt_WR) with multiple termination impedance options. Refresh modes include standard, self-refresh, auto self-refresh (ASR), and partial array self-refresh (PASR).

Key Specifications

Pinout & Package

Packaged in a 96-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) measuring 7.5 mm × 13 mm with 1.0 mm maximum thickness, lead-free and RoHS-compliant. Ball pitch is 0.8 mm; balls arranged in 9 rows × 12 columns (A–L, 1–9, plus J10–K10).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K128M16JT-125K and IS43TR16128B-125KBL, the W631GG6MB-12 offers standard 1.5 V operation with proven industrial 0–95°C performance, making it optimal for cost-sensitive, thermally stable embedded designs where DDR3L or extended temperature are unnecessary.

Availability

W631GG6MB-12 is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical electronics requiring stable component supply, long-term lifecycle assurance, and JEDEC-compliant DDR3-1600 performance.

Supply support for W631GG6MB-12 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W631GG6MB-12 belongs to Winbond's DDR3 SDRAM product line, engineered for reliability in harsh environments and designed to meet JEDEC-standard timing, power, and thermal requirements for embedded computing and infrastructure applications.

FAQ

What is the maximum clock frequency supported by the W631GG6MB-12?

The W631GG6MB-12 supports a maximum clock frequency of 800 MHz, corresponding to DDR3-1600 data transfer rates of 1600 MT/s. This is validated under JEDEC conditions with VDD/VDDQ = 1.5 V ± 0.075 V and operating case temperature from 0°C to 95°C. The device achieves this speed with CL=11, tRCD=tRP=13.75 ns minimum, and tRC=48.75 ns minimum.

Does the W631GG6MB-12 support dynamic on-die termination (ODT)?

Yes, the W631GG6MB-12 supports dynamic ODT (Rtt_WR) via Mode Register MR2. This feature allows real-time switching of termination resistance on DQ, DQS, and DM lines during write operations, improving signal integrity without requiring external resistors. Supported Rtt_WR values include 120 Ω, 60 Ω, and 40 Ω, selected through MR2 bit settings.

What is the purpose of the ZQ pin on the W631GG6MB-12?

The ZQ pin on the W631GG6MB-12 connects to a 240 Ω ±1% external precision resistor to ground and enables factory and runtime calibration of output driver strength and on-die termination (ODT) impedances. This calibration compensates for process, voltage, and temperature variations, ensuring consistent signal levels and timing margins across operating conditions.

Can the W631GG6MB-12 operate above 85°C?

Yes, the W631GG6MB-12 is rated for 0°C ≤ T_CASE ≤ 95°C and maintains full JEDEC AC/DC specifications across this range. Above 85°C, the refresh interval must be halved to 3.9 µS (requiring either Auto Self-Refresh mode enabled via MR2 or manual entry into Self-Refresh), and tREFI must be set accordingly in the memory controller.

How many banks does the W631GG6MB-12 have, and why does that matter?

The W631GG6MB-12 has eight internal banks, enabling concurrent row activations and interleaved access patterns. This architecture increases effective bandwidth by allowing one bank to be precharged while another is active, reducing average access latency in burst-intensive applications such as video buffering or packet processing.