Winbond Electronics Corporation W631GG6MB12I

Overview

W631GG6MB12I from Winbond is a 1 Gbit DDR3 SDRAM organized as 8M × 8 banks × 16 bits, operating at DDR3-1600 speed (800 MHz clock, 11-11-11 timing), with industrial temperature range (–40°C to +95°C), 1.5 V supply, and VFBGA-96 (7.5 × 13 mm) packaging. It serves as main system memory in embedded controllers, network edge devices, and industrial HMIs requiring reliable high-bandwidth data buffering.

For engineers reviewing the W631GG6MB12I datasheet, W631GG6MB12I pinout, W631GG6MB12I application, or W631GG6MB12I equivalent, key selection criteria include CAS latency support (CL = 5–11), programmable CWL (5–8), on-die termination (RTT_NOM/RTT_WR), ZQ calibration, and industrial-grade thermal stability across full voltage and frequency operating conditions.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks for concurrent access and supports both burst length 8 (BL8) and burst chop 4 (BC4) modes. It uses differential CK/CK# inputs for command/address latching and source-synchronous DQS/DQS# strobes aligned to read/write data edges.

The device features asynchronous RESET#, programmable mode registers (MR0–MR3) for CAS latency, additive latency, ODT control, and dynamic ODT (Rtt_WR), plus Multi-Purpose Register (MPR) support for system-level timing calibration via write leveling and predefined read patterns.

Key Specifications

Pinout & Package

VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm thickness) with 0.8 mm ball pitch, RoHS-compliant, lead-free construction. Ball layout follows JEDEC-standard DDR3 SDRAM pinout for 16-bit x8-bank configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K128M16HA-125:E and IS43TR16128B-125KBL, W631GG6MB12I uniquely combines +95°C operation, PASR, MPR, and full JEDEC DDR3-1600 feature set - making it the only option for thermally constrained, low-power, and calibration-aware embedded systems.

Availability

W631GG6MB12I is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical HMI applications requiring stable component supply, long-term lifecycle assurance, and guaranteed industrial temperature performance.

Supply support for W631GG6MB12I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W631GG6MB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for embedded systems demanding extended temperature operation, low-power self-refresh modes, and robust signal integrity features like ZQ calibration and dynamic ODT.

FAQ

What is the maximum supported CAS latency for W631GG6MB12I at DDR3-1600 speed?

W631GG6MB12I supports CAS latency settings of CL = 5, 6, (7), 8, (9), 10, and 11 at DDR3-1600 speed. CL = 11 is fully validated with tRCD/tRP = 13.75 ns minimum and is commonly used in industrial applications requiring timing margin. Optional CL = 7 and CL = 9 are supported but require SPD programming to enforce tAA/tRCD/tRP ≤ 13.125 ns.

Does W631GG6MB12I support dynamic on-die termination (Rtt_WR)?

Yes, W631GG6MB12I supports dynamic ODT via MR2 bit A2, enabling Rtt_WR = 60 Ω or 120 Ω during write bursts only. This feature is controlled by the ODT pin and improves signal integrity on write data lines without increasing standby power - a key advantage over static ODT-only DDR3 parts.

What is the purpose of the Multi-Purpose Register (MPR) in W631GG6MB12I?

The MPR in W631GG6MB12I provides a fixed 128-bit read-only pattern used for system-level timing margin verification and write leveling calibration. When enabled via MR3, the MPR outputs this pattern on DQ pins synchronized to DQS, allowing the memory controller to measure and adjust write timing offsets - essential for reliable high-speed DDR3 interface bring-up.

How does W631GG6MB12I handle refresh at 95°C case temperature?

At TCASE > 85°C, W631GG6MB12I requires doubled auto-refresh frequency (tREFI = 3.9 µS instead of 7.8 µS) to maintain data retention. This is achieved either by enabling Auto Self-Refresh (ASR) via MR2[A6]=1 or by entering Manual Self-Refresh mode with Extended Temperature Range capability (MR2[A6]=0, MR2[A7]=1), both validated for operation up to +95°C.

What package type and ball count does W631GG6MB12I use?

W631GG6MB12I uses a VFBGA-96 package measuring 7.5 mm × 13 mm with 1.0 mm height and 0.8 mm ball pitch. It is lead-free and RoHS-compliant, matching JEDEC MO-270AC standard for DDR3 SDRAMs and ensuring drop-in compatibility with existing DDR3-1600 layout footprints.