Winbond Electronics Corporation W631GG6MB12I TR

Overview

W631GG6MB12I TR from Winbond is a 1G-bit DDR3 SDRAM organized as 8M × 8 banks × 16 bits, operating at DDR3-1600 speed (800 MHz clock, 11-11-11 timing), with VDD/VDDQ = 1.5 V ± 0.075 V, industrial temperature range (−40°C to +95°C), and packaged in 96-ball VFBGA (7.5 × 13 mm, 1.0 mm height). It serves as main memory in embedded computing, network edge devices, and industrial controllers requiring reliable high-bandwidth data buffering.

For engineers reviewing the W631GG6MB12I TR datasheet, W631GG6MB12I TR pinout, W631GG6MB12I TR application, or W631GG6MB12I TR equivalent, key selection criteria include CAS Latency support (CL = 5–11), programmable CWL (5–8), ZQ calibration capability, on-die termination (RTT_NOM/RTT_WR), and industrial-grade thermal stability across full JEDEC AC/DC specs.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks for concurrent access, differential CK/CK# clocking synchronized at the crosspoint, and source-synchronous DQS/DQS# strobes aligned edge-to-read-data and center-to-write-data. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2) and programmable read burst ordering (interleaved/nibble sequential).

Functional operation includes asynchronous RESET# for power-up initialization, auto-precharge on read/write bursts, multiple power-down modes (precharged/active), and system-level calibration features: write leveling, multi-purpose register (MPR) pattern readout, and ZQ calibration using an external 240 Ω resistor to ground for output driver and ODT impedance tuning.

Key Specifications

Pinout & Package

VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm profile) with ball pitch of 0.8 mm, compliant with JEDEC MO-270AB standard. Ball assignment follows standard DDR3 SDRAM layout with dedicated VDD/VDDQ, VSS, address/command, data, strobe, and control balls including RESET#, CKE, ODT, and ZQ.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with IS43TR16128B-125KBL and MT41K128M16HA-125:E, the W631GG6MB12I TR uniquely delivers full industrial temperature compliance with PASR, ASR, and ZQ calibration-enabling drop-in use in thermally demanding embedded systems without voltage or timing requalification.

Availability

W631GG6MB12I TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, medical imaging, and test equipment applications requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GG6MB12I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W631GG6MB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for embedded systems requiring guaranteed operation across −40°C to +105°C with JEDEC-compliant reliability and advanced power management features.

FAQ

What is the maximum supported CAS Latency for W631GG6MB12I TR?

The W631GG6MB12I TR supports CAS Latency settings of CL = 5, 6, 7, 8, 9, 10, and 11 per JEDEC DDR3 specification. At DDR3-1600 speed (800 MHz), CL = 11 corresponds to a tAA of 13.75 ns minimum, validated across the full −40°C to +95°C industrial temperature range with full AC/DC compliance.

Does W631GG6MB12I TR support ZQ calibration, and what external component is required?

Yes, the W631GG6MB12I TR supports ZQ calibration for both output driver strength and on-die termination impedance. It requires a single 240 Ω ±1% resistor connected between the ZQ ball and ground, as specified in Section 8.18 and Table 10.18.3 of the datasheet. Calibration occurs automatically on power-up and can be triggered manually via ZQCL command.

What power-down modes are available on W631GG6MB12I TR, and how do they differ?

The W631GG6MB12I TR supports Precharged Power Down and Active Power Down modes. Precharged Power Down reduces current (IDD2P) to ≤25 mA while retaining row address; Active Power Down (IDD3N) allows faster wake-up but draws higher current (≤45 mA). Both modes are entered via CKE low with appropriate bank state, and exit latency is tXP (≤10 ns) for precharged and tXARD (≤20 ns) for active mode.

Can W631GG6MB12I TR operate in Partial Array Self-Refresh (PASR) mode, and how is it configured?

Yes, the W631GG6MB12I TR supports PASR to reduce self-refresh current by refreshing only selected banks. PASR is enabled via MR2 bits A6–A4 (0b001 to 0b111), selecting 1/2, 1/4, 1/8, or full-array refresh. Configuration requires issuing MRS command after setting appropriate values in MR2, and is validated for IDD6 reduction up to 50% in industrial temperature conditions.

Is W631GG6MB12I TR pin-compatible with other Winbond DDR3 SDRAMs in the same VFBGA-96 package?

Yes, the W631GG6MB12I TR shares identical ball mapping and electrical interface with other members of the W631GG6MB family (e.g., W631GG6MB11I, W631GG6MB15J), including all address, data, strobe, control, and power balls. This enables direct speed-bin substitution within the same temperature grade without PCB layout changes, provided timing constraints and voltage requirements are met.