Winbond Electronics Corporation W631GG6MB-12 TR
- Part No.:
- W631GG6MB-12 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-VFBGA
- Datasheet:
-
W631GG6MB-12 TR.pdf
- Description:
- IC DRAM 1GBIT PARALLEL 96VFBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
W631GG6MB-12 TR from Winbond Electronics is a 1G-bit DDR3 SDRAM organized as 8M × 8 banks × 16 bits, compliant with DDR3-1600 (11-11-11) timing, operating at 1.5 V supply, and rated for 0°C ≤ TCASE ≤ 95°C. It supports programmable CAS Latency (CL = 5–11), CAS Write Latency (CWL = 5–8), on-die termination (ODT), ZQ calibration, and asynchronous RESET#, targeting memory subsystems in industrial computing and embedded controllers.
For engineers reviewing the W631GG6MB-12 TR datasheet, W631GG6MB-12 TR pinout, W631GG6MB-12 TR application, or W631GG6MB-12 TR equivalent, key selection criteria include DDR3-1600 speed bin compliance, VFBGA-96 package compatibility, SSTL_15 interface signaling, CL/CWL programmability, and industrial temperature support without extended thermal grade.
Technical Context
This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access. Its differential clock (CK/CK#) and bi-directional DQS/DQS# strobes support source-synchronous double-data-rate transfers, while DLL alignment ensures precise DQ-DQS timing relative to CK edges.
Functional control is managed via mode registers MR0–MR3, supporting programmable features including additive latency (AL = 0, CL−1, CL−2), posted CAS, dynamic ODT (Rtt_WR), partial array self-refresh (PASR), and write leveling. The device uses asynchronous RESET# for power-up initialization and supports both auto-precharge and manual refresh commands.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 G-bit (8,388,608 words × 8 banks × 16 bits) |
| Data Width | 16-bit bidirectional data bus (x16 organization) |
| Speed Grade | DDR3-1600 (11-11-11), fCKMAX = 800 MHz |
| CAS Latency | Programmable CL = 5, 6, 7, 8, 9, 10, 11 - determines tAA min (13.75 ns) |
| CAS Write Latency | Programmable CWL = 5–8 - sets write latency WL = AL + CWL |
| Supply Voltage | VDD/VDDQ = 1.5 V ± 0.075 V - requires tight regulation for SSTL_15 I/O compliance |
| Operating Temp | 0°C ≤ TCASE ≤ 95°C - standard commercial/industrial range, no extended grade |
| Package | VFBGA-96 (7.5 × 13 mm, 1.0 mm height, RoHS-compliant, lead-free) |
Pinout & Package
VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and RoHS-compliant lead-free construction. Ball map follows JEDEC MO-274AC standard layout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1 | VDD | Core power supply (1.5 V) for internal logic |
| A2 | DQ0 | Data bit 0 - bidirectional, SSTL_15 compatible |
| A3 | DQ1 | Data bit 1 - paired with DQS0 for source-synchronous timing |
| A4 | DQ2 | Data bit 2 - part of upper-byte DQ[7:0] group |
| A5 | DQ3 | Data bit 3 - supports burst chop (BC4) and full burst (BL8) |
| A6 | DQ4 | Data bit 4 - used during read/write with DQS/DQS# strobe alignment |
| A7 | DQ5 | Data bit 5 - subject to ODT control during writes |
| A8 | DQ6 | Data bit 6 - terminated dynamically via Rtt_WR when enabled |
| A9 | DQ7 | Data bit 7 - lower-byte data lane, shares DQS0 strobe |
| B1 | VSS | Digital ground reference for core and I/O circuits |
| B2 | DQS0 | Differential data strobe for DQ[7:0] - edge-aligned on reads, center-aligned on writes |
| B3 | DQS0# | Inverted complement of DQS0 - required for differential receiver operation |
| B4 | DM0 | Data mask for DQ[7:0] - suppresses write data per byte lane |
| B5 | CK | Primary differential clock input - latches commands/address on rising edge |
| B6 | CK# | Inverted clock complement - defines latch point at CK/CK# crosspoint |
| B7 | CKE | Clock enable - controls power-down entry/exit and self-refresh activation |
| B8 | CS# | Chip select - active-low command qualifier; sampled on CK rising edge |
| B9 | RESET# | Asynchronous reset - initiates power-up initialization sequence |
| C1 | VDDQ | I/O power supply (1.5 V) - independent from VDD for noise isolation |
| C2 | DQ8 | Data bit 8 - upper-byte DQ[15:8], paired with DQS1 |
| C3 | DQ9 | Data bit 9 - supports same burst and latency configurations as DQ[7:0] |
| C4 | DQ10 | Data bit 10 - subject to same ODT settings and timing constraints |
| C5 | DQ11 | Data bit 11 - referenced to DQS1/DQS1# for timing closure |
| C6 | DQ12 | Data bit 12 - supports write leveling calibration via MPR pattern |
| C7 | DQ13 | Data bit 13 - used in multi-bank interleaved access patterns |
| C8 | DQ14 | Data bit 14 - enables high-bandwidth burst transfers across 16-bit bus |
| C9 | DQ15 | Data bit 15 - completes x16 data path; supports DM1 masking |
| D1 | VSSQ | I/O ground - separate from core VSS to minimize switching noise coupling |
| D2 | DQS1 | Differential strobe for DQ[15:8] - independently aligned and calibrated |
| D3 | DQS1# | Inverted strobe complement - required for DQS1 receiver termination |
| D4 | DM1 | Data mask for DQ[15:8] - enables byte-level write granularity |
| D5 | A0 | Address bit 0 - latched with address/command bus on CK rising edge |
| D6 | A1 | Address bit 1 - used for bank and row/column addressing |
| D7 | A2 | Address bit 2 - contributes to 8M-word row decoding |
| D8 | A3 | Address bit 3 - supports 8-bank selection (BA[2:0]) and column addressing |
| D9 | A4 | Address bit 4 - part of column address (A[9:0]) for 1K-column pages |
| E1 | VDD | Secondary core power - decoupling critical for DLL stability |
| E2 | A5 | Address bit 5 - extends column address space for 2K-byte page size |
| E3 | A6 | Address bit 6 - used in mode register set (MRS) commands |
| E4 | A7 | Address bit 7 - selects MR0–MR3 during MRS cycles |
| E5 | A8 | Address bit 8 - defines burst length (BL8/BC4) and ordering (interleaved/nibble) |
| E6 | A9 | Address bit 9 - contributes to tRC and tRAS timing calculations |
| E7 | BA0 | Bank address 0 - selects one of eight internal banks for activation |
| E8 | BA1 | Bank address 1 - enables concurrent bank operations and hidden refresh |
| E9 | BA2 | Bank address 2 - completes 3-bit bank decode (BA[2:0]) |
| F1 | VSS | Ground return for command/address signals - minimizes skew |
| F2 | WE# | Write enable - active-low signal controlling READ/WRITE command execution |
| F3 | CAS# | Column address strobe - sampled with RAS#/WE# to decode command type |
| F4 | RAS# | Row address strobe - initiates ACTIVATE, PRECHARGE, REFRESH |
| F5 | ODT | On-die termination control - enables/disables Rtt_NOM/Rtt_WR per MR1/MR2 |
| F6 | TDQS# | Terminated DQS# - optional for point-to-point topologies requiring reduced stubs |
| F7 | ZQ | ZQ calibration reference - connects to external 240 Ω ±1 % resistor to ground |
| F8 | VDDQ | Secondary I/O supply - ensures stable output driver impedance |
| F9 | VSSQ | Secondary I/O ground - maintains SSTL_15 common-mode voltage integrity |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Latency | CL = 5–11 selectable via MR0 - enables optimization for system timing margin vs. bandwidth trade-off |
| Dynamic On-Die Termination | Rtt_WR configurable per MR2 - improves write signal integrity without external resistors |
| ZQ Calibration | One-time or periodic calibration using external 240 Ω resistor - maintains 34 Ω output driver and ODT accuracy over PVT |
| Write Leveling Support | MPR-based training sequence with DQS-DQ phase adjustment - enables reliable timing closure at DDR3-1600 speeds |
| Partial Array Self-Refresh | PASR mode via MR2 - reduces self-refresh current by refreshing only active banks, extending battery life in portable systems |
| Asynchronous Reset | RESET# pin asserts power-up initialization - eliminates dependency on clock stability during cold start |
Applications
| Industrial PLC Memory Buffer | Medical Imaging Frame Store |
|---|---|
Use Scenario: Real-time data buffering in programmable logic controllers handling sensor I/O and motion control loops. IC Role / Device Role / Timing Role: Primary working memory for deterministic task execution, interfacing with ARM Cortex-M7 or RISC-V SoCs via 16-bit DDR3 bus. Use Value: DDR3-1600 bandwidth (12.8 GB/s peak) sustains >100 kSPS analog acquisition with zero-copy DMA transfers; CL=7/8 setting balances latency and throughput. | Use Scenario: Temporary storage of uncompressed DICOM image frames during CT/MRI scan acquisition and preprocessing. IC Role / Device Role / Timing Role: High-reliability frame buffer supporting burst-intensive read-modify-write operations under strict thermal constraints. Use Value: VFBGA-96 package enables compact PCB layout; PASR and self-refresh modes reduce idle power to <10 mA, meeting Class II medical thermal limits. |
| Network Edge Router Packet Buffer | Automotive ADAS Video Preprocessor |
Use Scenario: Deep packet inspection and QoS tagging in Layer 3 enterprise edge routers with multi-gigabit Ethernet interfaces. IC Role / Device Role / Timing Role: Shared packet memory for ingress/egress queues, accessed concurrently by multiple traffic managers and crypto accelerators. Use Value: Eight internal banks allow bank-interleaved access, sustaining >95% bus utilization during sustained 10 GbE line-rate forwarding; ODT and write leveling ensure signal integrity at 800 MHz. | Use Scenario: Real-time video preprocessing pipeline in automotive surround-view systems processing four 720p@30fps camera inputs. IC Role / Device Role / Timing Role: Frame buffer for ISP pipeline stages including de-noising, lens correction, and stitching before GPU rendering. Use Value: 16-bit bus width matches typical MIPI CSI-2 bridge outputs; DDR3-1600 timing (11-11-11) meets ISO 26262 ASIL-B timing predictability requirements for safety-critical vision buffers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K128M16HA-125:E | 1 G-bit x16 DDR3L (1.35 V), -125 speed grade (DDR3L-1600), 96-ball FBGA, supports 0°C–95°C | Lower voltage operation reduces system power; requires separate VDDQ/VDD rail design | Select for new designs prioritizing energy efficiency where DDR3L compatibility is validated |
| IS43TR16128B-125KBL | 1 G-bit x16 DDR3, -125 speed grade (DDR3-1600), 96-ball FBGA, rated -40°C–95°C | Extended temperature range adds cost; identical timing and pinout to W631GG6MB-12 TR | Choose when operating ambient exceeds 95°C or when long-term industrial qualification is mandatory |
Compared with MT41K128M16HA-125:E and IS43TR16128B-125KBL, W631GG6MB-12 TR offers standard DDR3 (1.5 V) operation with proven thermal stability up to 95°C, making it optimal for cost-sensitive industrial controllers where DDR3L migration or extended temp qualification is unnecessary.
Availability
W631GG6MB-12 TR is available at Aetrix Electronics and suitable for industrial PLCs, medical imaging systems, network edge routers, and automotive ADAS video preprocessors requiring stable component supply, long-lifecycle support, and JEDEC-compliant DDR3-1600 performance.
Supply support for W631GG6MB-12 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W631GG6MB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for reliability-critical embedded systems requiring JEDEC-compliant timing, robust thermal performance, and long-term supply assurance.
FAQ
What is the maximum clock frequency supported by W631GG6MB-12 TR?
W631GG6MB-12 TR supports a maximum clock frequency of 800 MHz, corresponding to DDR3-1600 (11-11-11) operation. This is confirmed in the datasheet's Key Parameters table under fCKMAX = 800 MHz for the -12 speed grade. The device achieves this with tAA min = 13.75 ns and tRCD/tRP min = 13.75 ns, meeting JEDEC specification requirements for DDR3-1600 timing.
Does W631GG6MB-12 TR support write leveling and how is it implemented?
Yes, W631GG6MB-12 TR supports write leveling via its Multi Purpose Register (MPR) and dedicated write leveling mode. The MPR outputs a predefined calibration bit pattern on DQ pins, allowing the memory controller to adjust DQS-DQ phase alignment. This procedure is defined in section 8.9 of the datasheet and is essential for achieving timing closure at DDR3-1600 speeds with the W631GG6MB-12 TR's 16-bit interface.
What package type and ball count does W631GG6MB-12 TR use?
W631GG6MB-12 TR uses a VFBGA-96 package measuring 7.5 mm × 13 mm with 1.0 mm thickness and 0.8 mm ball pitch. It is RoHS-compliant and lead-free, conforming to JEDEC MO-274AC. The 96-ball layout includes dedicated VDD/VDDQ, VSS/VSSQ, address/command, data, strobe, and control terminals as detailed in the Ball Configuration and Ball Description sections of the datasheet.
Can W631GG6MB-12 TR operate outside the 0°C to 95°C temperature range?
No, W631GG6MB-12 TR is specified only for 0°C ≤ TCASE ≤ 95°C operation. The datasheet explicitly states that the -12 suffix denotes standard commercial/industrial grade with no extended temperature capability. For operation below 0°C or above 95°C, alternative variants such as W631GG6MB12I (-40°C to 95°C) or W631GG6MB12J (-40°C to 105°C) must be selected instead of W631GG6MB-12 TR.
What are the supported CAS Latency and CAS Write Latency values for W631GG6MB-12 TR?
W631GG6MB-12 TR supports CAS Latency (CL) values of 5, 6, 7, 8, 9, 10, and 11, and CAS Write Latency (CWL) values of 5, 6, 7, and 8. These are programmable via mode registers MR0 and MR2 respectively. The datasheet's Key Parameters table confirms Sup_CL = 5–11 and Sup_CWL = 5–8 for the -12 speed grade, enabling flexible timing configuration for different system clock domains and controller capabilities.
W631GG6MB-12 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- Parallel
- Clock Frequency:
- 800 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.425V ~ 1.575V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-VFBGA (7.5x13)
W631GG6MB-12 TR FAQ
1.How can I place an order for W631GG6MB-12 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GG6MB-12 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GG6MB-12 TR reliable?
The price and inventory of W631GG6MB-12 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GG6MB-12 TR is usually 5 days.
3.What payment methods are accepted for W631GG6MB-12 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GG6MB-12 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GG6MB-12 TR?
W631GG6MB-12 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GG6MB-12 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GG6MB-12 TR?
For technical support, including W631GG6MB-12 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GG6MB-12 TR requirements.
6.How does Aetrix verify that W631GG6MB-12 TR is sourced from the original manufacturer or authorized distributors?
All W631GG6MB-12 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GG6MB-12 TR meets industry standards.
7.What is the process for return or replacement of W631GG6MB-12 TR?
All W631GG6MB-12 TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GG6MB-12 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GG6MB-12 TR part is unused and in its original packaging.
Return procedure for W631GG6MB-12 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GG6MB-12 TR Tags

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