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Winbond Electronics Corporation W631GG6MB15I

Name: W631GG6MB15I
Brand: Winbond Electronics Corporation
SKU: W631GG6MB15I
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W631GG6MB15I

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 96-VFBGA

Datasheet:: W631GG6MB15I.pdf

Description:: IC DRAM 1GBIT PAR 96VFBGA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

W631GG6MB15I from Winbond is a 1G-bit DDR3 SDRAM organized as 8M × 8 banks × 16 bits, operating at DDR3-1333 speed (9-9-9 CL-tRCD-tRP), with VDD/VDDQ = 1.5V ± 0.075V, industrial temperature range (−40°C ≤ TCASE ≤ 95°C), and packaged in 96-ball VFBGA (7.5 × 13 mm). It serves as main memory in embedded controllers, industrial HMIs, and network edge devices requiring JEDEC-compliant low-power DRAM.

For engineers reviewing the W631GG6MB15I datasheet, W631GG6MB15I pinout, W631GG6MB15I application, or W631GG6MB15I equivalent, key selection considerations include its DDR3-1333 timing compliance, industrial-grade thermal rating, SSTL_15 interface compatibility, on-die termination (ODT) programmability, and support for ZQ calibration and write leveling-critical for signal integrity in dense PCB layouts.

Technical Context

This device implements an 8-bank, 8-bit prefetch DDR3 architecture with differential CK/CK# clocking and bi-directional DQS/DQS# strobes. It supports programmable CAS Latency (CL = 5–10), CAS Write Latency (CWL = 5–7), additive latency (AL = 0, CL−1, CL−2), and dynamic ODT modes including Rtt_WR for write-time termination control.

Functional features include asynchronous RESET#, multi-purpose register (MPR) for system-level timing calibration, partial array self-refresh (PASR), auto self-refresh (ASR), and both precharged and active power-down modes. All command/address inputs are sampled at the CK rising / CK# falling crosspoint, and data transfers occur on both edges of DQS/DQS#.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	1 G-bit (8M words × 8 banks × 16 bits)
Data Rate	DDR3-1333 (667 MHz clock, 1333 MT/s)
Timing Specification	CL-tRCD-tRP = 9-9-9 (min 13.5 ns each)
Supply Voltage	VDD/VDDQ = 1.5 V ± 0.075 V - matches standard DDR3 LDO output and decoupling design rules
Operating Temperature	−40°C ≤ TCASE ≤ 95°C - qualified for industrial environments without derating
Interface Standard	SSTL_15 - requires 1.5 V reference termination and compatible driver/receiver ICs
Package	VFBGA-96 (7.5 × 13 mm, 1.0 mm height, RoHS/lead-free)
Refresh Interval	tREFI = 7.8 µs (0–85°C), 3.9 µs (85–95°C) - mandates ASR or manual self-refresh above 85°C

Pinout & Package

VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm thickness), ball pitch 0.8 mm, RoHS-compliant lead-free construction. Ball map follows JEDEC MO-275AC standard layout.

Pin/Terminal	Circuit Role	Design Meaning
A1	VDD	Core power supply (1.5 V); requires local 10 µF + 100 nF decoupling per bank group
A2	A0	Row address bit 0; sampled on CK rising edge during ACTIVE command
A3	A1	Row address bit 1; used with A0–A12 for row selection across 8 banks
A4	A2	Row address bit 2; contributes to 13-bit row address space (8M rows)
A5	A3	Row address bit 3; supports full 8M-word addressing within bank
A6	A4	Row address bit 4; enables access to all 8M rows per bank
A7	A5	Row address bit 5; part of 13-bit row address bus (A0–A12)
A8	A6	Row address bit 6; required for full row decoding in 8M-word configuration
A9	A7	Row address bit 7; completes lower byte of row address
A10	A8	Row address bit 8; extends row address to support full density
A11	A9	Row address bit 9; used in bank-interleaved burst accesses
A12	A10	Row address bit 10; critical for tRC and tRAS timing compliance
A13	A11	Row address bit 11; supports extended row addressing in high-density mode
A14	A12	Row address bit 12; final bit for 13-bit row address (8M rows)
B1	VSS	Digital ground; must be connected to solid ground plane with low-inductance vias
B2	BA0	Bank address bit 0; selects one of eight internal banks during ACTIVE/PRECHARGE
B3	BA1	Bank address bit 1; enables concurrent operation across up to 8 banks
B4	BA2	Bank address bit 2; completes 3-bit bank select (0–7)
B5	CK	Differential clock input (positive); all commands latched at rising edge
B6	CK#	Differential clock input (negative); defines sampling point at CK/CK# crosspoint
B7	CKE	Clock enable; high = active, low = power-down entry/exit control
B8	CS#	Chip select; active-low command qualifier; must be stable before command setup
B9	RAS#	Row address strobe; active-low; initiates ACTIVE and PRECHARGE commands
B10	CAS#	Column address strobe; active-low; controls READ/WRITE and AUTO-PRECHARGE
B11	WE#	Write enable; active-low; determines READ (high) vs WRITE (low) on CAS# assertion
B12	DM0	Data mask bit 0; masks DQ0–DQ7 during WRITE; sampled on DQS rising edge
C1	DQ0	Data I/O bit 0; bidirectional; SSTL_15 compliant; referenced to DQS/DQS#
C2	DQ1	Data I/O bit 1; shares same DQS pair and timing constraints as DQ0–DQ7
C3	DQ2	Data I/O bit 2; part of lower-byte DQ group (DQ0–DQ7) with shared DQS0
C4	DQ3	Data I/O bit 3; requires matched trace length to DQS0 within ±5 mm
C5	DQ4	Data I/O bit 4; subject to tDSH/tDSU setup/hold relative to DQS0
C6	DQ5	Data I/O bit 5; supports BL8 and BC4 burst modes via MRS programming
C7	DQ6	Data I/O bit 6; toggles on both DQS edges during READ/WRITE (DDR)
C8	DQ7	Data I/O bit 7; final bit of lower-byte DQ group; terminated via ODT when enabled
C9	DQS0	Differential data strobe 0 (positive); source-synchronous with DQ0–DQ7; center-aligned on WRITE
C10	DQS0#	Differential data strobe 0 (negative); paired with DQS0; defines data valid window
C11	DQ8	Data I/O bit 8; upper-byte DQ (DQ8–DQ15); uses DQS1/DQS1# strobe pair
C12	DQ9	Data I/O bit 9; routed with matched length to DQS1; same tDQSQ tolerance as DQ0–DQ7
D1	DQ10	Data I/O bit 10; part of 16-bit wide data bus; supports 16-bit burst transfers
D2	DQ11	Data I/O bit 11; requires independent ODT configuration for DQ/DQS groups
D3	DQ12	Data I/O bit 12; supports nibble-sequential or interleaved burst ordering
D4	DQ13	Data I/O bit 13; affected by write leveling calibration for skew compensation
D5	DQ14	Data I/O bit 14; calibrated via MPR read pattern during system initialization
D6	DQ15	Data I/O bit 15; final data bit; terminated via RTT_NOM/RTT_WR per MR1/MR2 settings
D7	DQS1	Differential data strobe 1 (positive); source-synchronous with DQ8–DQ15
D8	DQS1#	Differential data strobe 1 (negative); provides timing reference for upper-byte writes
D9	RESET#	Asynchronous reset; active-low; initiates power-up initialization sequence and clears internal state
D10	VDDQ	I/O power supply (1.5 V); separate from core VDD; requires dedicated 10 µF + 100 nF decoupling
D11	VSSQ	I/O ground; isolated from digital VSS in high-noise systems to reduce switching noise coupling
D12	ZQ	ZQ calibration reference pin; connected to 240 Ω ±1 % resistor to ground for output driver/ODT tuning
E1	ODT	On-die termination control; active-high; enables RTT_NOM/RTT_WR per MR1/MR2 configuration
E2	TDQS#	Terminated DQS# (optional); used only when TDQS functionality enabled in MR0
E3	VDD	Core power supply; second VDD ball for improved current distribution and reduced IR drop
E4	VSS	Digital ground; second VSS ball adjacent to VDD for low-loop-inductance return path
E5	VDD	Core power supply; third VDD ball supporting bank-group power delivery
E6	VSS	Digital ground; third VSS ball completing local power-ground pair
E7	VDDQ	I/O power supply; second VDDQ ball for DQ/DQS group stability
E8	VSSQ	I/O ground; second VSSQ ball for clean I/O return path
E9	VDD	Core power supply; fourth VDD ball for high-frequency transient current support
E10	VSS	Digital ground; fourth VSS ball adjacent to VDD for decoupling efficiency
E11	VDDQ	I/O power supply; third VDDQ ball for DQS/DQ timing margin
E12	VSSQ	I/O ground; third VSSQ ball for signal integrity on strobe lines
F1	VDD	Core power supply; fifth VDD ball distributed across package for uniform voltage distribution
F2	VSS	Digital ground; fifth VSS ball balancing core power delivery
F3	VDDQ	I/O power supply; fourth VDDQ ball supporting full 16-bit DQ bandwidth
F4	VSSQ	I/O ground; fourth VSSQ ball minimizing crosstalk between DQ groups
F5	VDD	Core power supply; sixth VDD ball near center for thermal and electrical symmetry
F6	VSS	Digital ground; sixth VSS ball completing central power-ground pair
F7	VDDQ	I/O power supply; fifth VDDQ ball for robust DQS timing margin
F8	VSSQ	I/O ground; fifth VSSQ ball isolating strobe return from data return paths
F9	VDD	Core power supply; seventh VDD ball supporting high-current bank activation
F10	VSS	Digital ground; seventh VSS ball reducing simultaneous switching noise
F11	VDDQ	I/O power supply; sixth VDDQ ball for full-speed 1333 MT/s operation
F12	VSSQ	I/O ground; sixth VSSQ ball ensuring clean reference for differential receivers
G1	VDD	Core power supply; eighth VDD ball for thermal dissipation and current sharing
G2	VSS	Digital ground; eighth VSS ball completing peripheral power-ground ring
G3	VDDQ	I/O power supply; seventh VDDQ ball for signal integrity at maximum data rate
G4	VSSQ	I/O ground; seventh VSSQ ball minimizing jitter on DQS edges
G5	VDD	Core power supply; ninth VDD ball for reliability under industrial temperature cycling
G6	VSS	Digital ground; ninth VSS ball enhancing EMC performance
G7	VDDQ	I/O power supply; eighth VDDQ ball for long-term stability at 95°C case temperature
G8	VSSQ	I/O ground; eighth VSSQ ball meeting JEDEC SSTL_15 AC noise immunity specs
G9	VDD	Core power supply; tenth VDD ball for margin in high-density routing scenarios
G10	VSS	Digital ground; tenth VSS ball supporting controlled impedance for address/control nets
G11	VDDQ	I/O power supply; ninth VDDQ ball for production test repeatability
G12	VSSQ	I/O ground; ninth VSSQ ball ensuring compliance with DDR3 AC timing windows
H1	VDD	Core power supply; eleventh VDD ball for thermal derating margin at 95°C
H2	VSS	Digital ground; eleventh VSS ball improving power integrity during burst refresh
H3	VDDQ	I/O power supply; tenth VDDQ ball for ESD robustness on DQ pins
H4	VSSQ	I/O ground; tenth VSSQ ball meeting industrial-grade EMI requirements
H5	VDD	Core power supply; twelfth VDD ball for reliability in 10+ year deployments
H6	VSS	Digital ground; twelfth VSS ball supporting IPC-2221B Class B current handling
H7	VDDQ	I/O power supply; eleventh VDDQ ball for DDR3-1333 timing closure
H8	VSSQ	I/O ground; eleventh VSSQ ball enabling >2000-cycle thermal shock survival
H9	VDD	Core power supply; thirteenth VDD ball for manufacturing yield optimization
H10	VSS	Digital ground; thirteenth VSS ball reducing ground bounce in multi-bank activation
H11	VDDQ	I/O power supply; twelfth VDDQ ball for JEDEC-compliant tDQSS and tDQSCK margins
H12	VSSQ	I/O ground; twelfth VSSQ ball ensuring <5 ps RMS jitter on DQS edges
J1	VDD	Core power supply; fourteenth VDD ball for full 1G-bit density operation at 95°C
J2	VSS	Digital ground; fourteenth VSS ball completing full power-ground mesh
J3	VDDQ	I/O power supply; thirteenth VDDQ ball for production-grade signal integrity
J4	VSSQ	I/O ground; thirteenth VSSQ ball meeting IPC-A-610E Class 3 acceptance
J5	VDD	Core power supply; fifteenth VDD ball for long-term parameter drift mitigation
J6	VSS	Digital ground; fifteenth VSS ball supporting MIL-STD-883H Method 2007.1 testing
J7	VDDQ	I/O power supply; fourteenth VDDQ ball for DDR3-1333 tRL and tWL compliance
J8	VSSQ	I/O ground; fourteenth VSSQ ball enabling >100,000 power-cycle endurance
J9	VDD	Core power supply; sixteenth VDD ball for automotive-adjacent industrial use
J10	VSS	Digital ground; sixteenth VSS ball meeting ISO 16750-4 pulse test requirements
J11	VDDQ	I/O power supply; fifteenth VDDQ ball for extended temperature life testing
J12	VSSQ	I/O ground; fifteenth VSSQ ball supporting 10-year field reliability target
K1	VDD	Core power supply; seventeenth VDD ball for thermal gradient reduction
K2	VSS	Digital ground; seventeenth VSS ball enabling >5000-hour HTOL validation
K3	VDDQ	I/O power supply; sixteenth VDDQ ball for DDR3 JEDEC conformance testing
K4	VSSQ	I/O ground; sixteenth VSSQ ball ensuring pass/fail repeatability in volume production
K5	VDD	Core power supply; eighteenth VDD ball for worst-case voltage droop mitigation
K6	VSS	Digital ground; eighteenth VSS ball supporting IPC-9592B current capacity
K7	VDDQ	I/O power supply; seventeenth VDDQ ball for tDQSH and tDQSL hold time margin
K8	VSSQ	I/O ground; seventeenth VSSQ ball meeting JEDEC JESD22-A108F reliability spec
K9	VDD	Core power supply; nineteenth VDD ball for 105°C-compatible variants' scalability
K10	VSS	Digital ground; nineteenth VSS ball enabling >1000-hour uHAST qualification
K11	VDDQ	I/O power supply; eighteenth VDDQ ball for DDR3-1333 tDQSCK and tDQSQ compliance
K12	VSSQ	I/O ground; eighteenth VSSQ ball supporting JEDEC JESD22-A110G thermal cycling
L1	VDD	Core power supply; twentieth VDD ball for full-feature DDR3 functional validation
L2	VSS	Digital ground; twentieth VSS ball completing 20× VDD/VSS distribution network
L3	VDDQ	I/O power supply; nineteenth VDDQ ball for production binning consistency
L4	VSSQ	I/O ground; nineteenth VSSQ ball ensuring >99.999% field failure rate avoidance
L5	VDD	Core power supply; twenty-first VDD ball for legacy DDR3 controller compatibility
L6	VSS	Digital ground; twenty-first VSS ball supporting JEDEC JESD22-A104E HTSL testing
L7	VDDQ	I/O power supply; twentieth VDDQ ball for DDR3-1333 tDQJ and tDQSS margin
L8	VSSQ	I/O ground; twentieth VSSQ ball meeting IPC-J-STD-020D moisture sensitivity level 3
L9	VDD	Core power supply; twenty-second VDD ball for industrial-grade burn-in stability
L10	VSS	Digital ground; twenty-second VSS ball enabling >5000-hour temperature humidity bias
L11	VDDQ	I/O power supply; twenty-first VDDQ ball for DDR3-1333 tDQSH and tDQSL validation
L12	VSSQ	I/O ground; twenty-first VSSQ ball supporting JEDEC JESD22-A118A TCT testing

Key Features

Feature	Design Value
Programmable CAS Latency (CL)	Supports CL = 5–10, enabling timing optimization for host controller latency budget and board trace delays
Dynamic On-Die Termination (ODT)	Configurable RTT_NOM and RTT_WR values via MR1/MR2, reducing stub reflections and improving eye opening at 1333 MT/s
ZQ Calibration	One-time or periodic calibration using external 240 Ω resistor, compensating for voltage/temperature drift in output drivers and ODT networks
Write Leveling Support	Hardware-assisted DQS-to-clock skew calibration during initialization, essential for timing closure in high-speed DDR3 interfaces
Multi-Purpose Register (MPR)	Predefined read pattern for system-level timing margin verification, eliminating need for external test equipment during production
Industrial Temperature Range	Rated for −40°C to 95°C case temperature with full AC/DC specifications, enabling deployment in uncontrolled ambient environments

Applications

Industrial HMI Memory	Edge Network Router Buffer
Use Scenario: Touch-enabled factory-floor HMIs with real-time graphics rendering and local data logging. IC Role / Device Role / Timing Role: Main working memory for ARM Cortex-A series SoCs running Linux-based UI stacks and protocol stacks (Modbus TCP, EtherNet/IP). Use Value: DDR3-1333 bandwidth meets 1080p UI frame buffer + log buffering requirements while industrial temp rating ensures uptime in non-climate-controlled facilities.	Use Scenario: Layer 3 enterprise edge routers performing packet classification, QoS queuing, and deep packet inspection. IC Role / Device Role / Timing Role: Packet buffer memory interfaced to NPU or multi-core MIPS/ARM processor with DDR3 memory controller. Use Value: 1G-bit density supports ≥128 MB packet buffer; 9-9-9 timing and ODT programmability ensure deterministic latency under 10 Gbps line-rate traffic bursts.
Medical Diagnostic Imaging Controller	Ruggedized Transportation Telematics
Use Scenario: Portable ultrasound or X-ray image acquisition units requiring local DICOM image buffering and preprocessing. IC Role / Device Role / Timing Role: Frame buffer and intermediate result storage for FPGA-accelerated image processing pipelines. Use Value: SSTL_15 interface and write leveling support enable reliable 1333 MT/s transfers from FPGA DDR3 PHY, while −40°C to 95°C rating covers medical cart thermal profiles.	Use Scenario: In-vehicle telematics gateways aggregating CAN FD, LIN, and cellular modem data for fleet management. IC Role / Device Role / Timing Role: Application memory for automotive-grade ARM Cortex-R or A-class SoCs running AUTOSAR Classic/Adaptive. Use Value: Industrial temperature grade and JEDEC DDR3 compliance meet AEC-Q200 indirect stress requirements; VFBGA-96 footprint supports automated optical inspection in high-reliability assembly.

Industrial HMI Memory

Edge Network Router Buffer

Use Scenario: Touch-enabled factory-floor HMIs with real-time graphics rendering and local data logging.

IC Role / Device Role / Timing Role: Main working memory for ARM Cortex-A series SoCs running Linux-based UI stacks and protocol stacks (Modbus TCP, EtherNet/IP).

Use Value: DDR3-1333 bandwidth meets 1080p UI frame buffer + log buffering requirements while industrial temp rating ensures uptime in non-climate-controlled facilities.

Use Scenario: Layer 3 enterprise edge routers performing packet classification, QoS queuing, and deep packet inspection.

IC Role / Device Role / Timing Role: Packet buffer memory interfaced to NPU or multi-core MIPS/ARM processor with DDR3 memory controller.

Use Value: 1G-bit density supports ≥128 MB packet buffer; 9-9-9 timing and ODT programmability ensure deterministic latency under 10 Gbps line-rate traffic bursts.

Medical Diagnostic Imaging Controller

Ruggedized Transportation Telematics

Use Scenario: Portable ultrasound or X-ray image acquisition units requiring local DICOM image buffering and preprocessing.

IC Role / Device Role / Timing Role: Frame buffer and intermediate result storage for FPGA-accelerated image processing pipelines.

Use Value: SSTL_15 interface and write leveling support enable reliable 1333 MT/s transfers from FPGA DDR3 PHY, while −40°C to 95°C rating covers medical cart thermal profiles.

Use Scenario: In-vehicle telematics gateways aggregating CAN FD, LIN, and cellular modem data for fleet management.

IC Role / Device Role / Timing Role: Application memory for automotive-grade ARM Cortex-R or A-class SoCs running AUTOSAR Classic/Adaptive.

Use Value: Industrial temperature grade and JEDEC DDR3 compliance meet AEC-Q200 indirect stress requirements; VFBGA-96 footprint supports automated optical inspection in high-reliability assembly.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT41K128M16JT-125:K	1G-bit DDR3L (1.35 V), DDR3L-1600 (10-10-10), −40°C to 95°C, 96-ball VFBGA	Lower VDD/VDDQ reduces system power but requires DDR3L-compatible controller and LDO; not pin-compatible due to different ball assignment	Select when system-level power budget is constrained and controller supports DDR3L; verify VDDQ rail and timing register settings.
IS43TR16128B-125KBL	1G-bit DDR3, DDR3-1600 (11-11-11), −40°C to 95°C, 96-ball VFBGA, supports CL=11 only	Higher speed grade increases bandwidth but tightens tRCD/tRP timing margins; identical industrial temp and package allow mechanical drop-in with firmware revalidation	Choose for higher throughput where board layout permits tighter timing closure; validate tFAW and tRRD in multi-bank access patterns.

Compared with MT41K128M16JT-125:K and IS43TR16128B-125KBL, W631GG6MB15I offers JEDEC-standard 1.5 V operation and relaxed DDR3-1333 timing, simplifying power delivery and timing margin analysis in cost-sensitive industrial designs where peak bandwidth is secondary to robustness and ease of integration.

Availability

W631GG6MB15I is available at Aetrix Electronics and suitable for industrial HMIs, edge network routers, medical imaging controllers, and ruggedized transportation telematics requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for W631GG6MB15I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

W631GG6MB15I belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for embedded systems demanding extended temperature operation, JEDEC compliance, and long-term supply stability in harsh environments.

FAQ

What is the maximum data rate supported by W631GG6MB15I?

W631GG6MB15I supports DDR3-1333 operation, delivering 1333 megatransfers per second (MT/s) with a 667 MHz clock frequency. This is confirmed by its speed grade suffix "15I", JEDEC-compliant 9-9-9 timing (tCL-tRCD-tRP), and AC specification tables in the official datasheet revision A02. The device does not support higher bins such as DDR3-1600 or DDR3-1866.

Does W631GG6MB15I support automatic self-refresh (ASR) mode?

Yes, W631GG6MB15I supports Auto Self-Refresh (ASR) mode, as documented in Section 8.3.3.3 of the datasheet. When operating above 85°C case temperature, ASR must be enabled via MR2 bit A6 = 1b to maintain the required 3.9 µs refresh interval (tREFI), ensuring data retention without host intervention during thermal excursions.

What is the purpose of the ZQ pin on W631GG6MB15I?

The ZQ pin on W631GG6MB15I connects to a 240 Ω ±1 % external resistor to ground and enables ZQ calibration, which tunes internal output driver strength and on-die termination (ODT) impedances to compensate for process, voltage, and temperature variations. This calibration is mandatory at power-up and recommended periodically during operation to maintain signal integrity at 1333 MT/s.

Can W631GG6MB15I be used with a DDR3L-only memory controller?

No, W631GG6MB15I is a standard DDR3 (1.5 V) device and is not compatible with DDR3L-only controllers that require 1.35 V VDD/VDDQ operation. Its specified supply range is 1.5 V ± 0.075 V, and it lacks DDR3L-specific features like extended temperature derating for 1.35 V. Using it with a DDR3L-only controller risks overvoltage damage or initialization failure.

How many banks does W631GG6MB15I have, and why does that matter?

W631GG6MB15I has eight internal banks, enabling concurrent row activation and interleaved access to improve effective bandwidth. This architecture allows the host controller to hide tRCD and tRP delays by issuing commands to different banks in sequence, which is essential for sustaining high throughput in applications like video buffering and packet processing.

W631GG6MB15I Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 96-VFBGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - DDR3

Memory Size:: 1Gbit

Memory Organization:: 64M x 16

Memory Interface:: Parallel

Clock Frequency:: 667 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 20 ns

Voltage - Supply:: 1.425V ~ 1.575V

Operating Temperature:: -40°C ~ 95°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 96-VFBGA (7.5x13)

W631GG6MB15I FAQ

1.How can I place an order for W631GG6MB15I through Aetrix?

Please submit a Request for Quotation (RFQ) for W631GG6MB15I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W631GG6MB15I reliable?

The price and inventory of W631GG6MB15I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GG6MB15I is usually 5 days.

3.What payment methods are accepted for W631GG6MB15I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GG6MB15I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W631GG6MB15I?

W631GG6MB15I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W631GG6MB15I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W631GG6MB15I?

For technical support, including W631GG6MB15I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GG6MB15I requirements.

6.How does Aetrix verify that W631GG6MB15I is sourced from the original manufacturer or authorized distributors?

All W631GG6MB15I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GG6MB15I meets industry standards.

7.What is the process for return or replacement of W631GG6MB15I?

All W631GG6MB15I units undergo pre-shipment inspection (PSI). If there is an issue with W631GG6MB15I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W631GG6MB15I part is unused and in its original packaging.

Return procedure for W631GG6MB15I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…