Winbond Electronics Corporation W631GG6MB15I TR

Overview

W631GG6MB15I TR from Winbond Electronics is a 1G-bit DDR3 SDRAM organized as 8M × 8 banks × 16 bits, operating at DDR3-1333 speed (9-9-9 timing), with VDD/VDDQ = 1.5V ± 0.075V, industrial temperature range (–40°C to +95°C), and packaged in 96-ball VFBGA (7.5 × 13 mm). It serves as main system memory in embedded controllers and industrial computing platforms requiring JEDEC-compliant low-power DRAM.

For engineers reviewing the W631GG6MB15I TR datasheet, W631GG6MB15I TR pinout, W631GG6MB15I TR application, or W631GG6MB15I TR equivalent, key selection criteria include CAS latency support (CL=5–10), programmable CWL (5–7), ZQ calibration capability, asynchronous RESET#, and SSTL_15 interface compliance for stable high-speed memory interfacing.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-aligned DQ/DQS timing, and source-synchronous differential strobe (DQS/DQS#) I/O synchronized to CK/CK#. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, and burst lengths of 8 (BL8) or 4 (BC4).

Functional operation includes programmable mode registers (MR0–MR3) for CAS latency, CWL, ODT settings, PASR, ASR, and dynamic ODT (Rtt_WR); ZQ calibration for output driver and ODT impedance tuning; and system-level timing calibration via write leveling and MPR read pattern for signal integrity optimization.

Key Specifications

Pinout & Package

Packaged in 96-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA), 7.5 mm × 13 mm, 1.0 mm thickness, RoHS-compliant and lead-free.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with W631GG6MB15I TR, MT41K128M16JT-125:K offers lower voltage operation at the cost of non-pin-compatibility and distinct power delivery requirements, while IS43TR16128B-15HBL provides direct electrical equivalence but requires validation of mode register initialization sequences and ZQ calibration convergence time.

Availability

W631GG6MB15I TR is available at Aetrix Electronics and suitable for industrial automation, medical imaging, network infrastructure, and transportation electronics requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GG6MB15I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W631GG6MB series targets cost-sensitive, thermally demanding embedded systems requiring JEDEC-compliant DDR3 performance with enhanced reliability features like ASR, PASR, and write leveling support.

FAQ

What is the maximum supported CAS latency for W631GG6MB15I TR?

W631GG6MB15I TR supports CAS latency settings of CL = 5, 6, 7, 8, 9, and 10, as defined in MR0. At its rated DDR3-1333 speed (667 MHz), CL = 9 is the default JEDEC timing bin (9-9-9), but CL = 7 and CL = 10 are also valid and electrically characterized per the datasheet's AC timing tables. The device does not support CL = 11 or higher at this speed grade.

Does W631GG6MB15I TR support dynamic on-die termination (Rtt_WR)?

Yes, W631GG6MB15I TR supports dynamic ODT (Rtt_WR) as specified in MR2. When enabled, Rtt_WR applies termination to DQ/DQS lines only during write operations, improving signal integrity on bidirectional buses. The supported Rtt_WR values are 120 Ω and 60 Ω, selected via MR2 bits A2–A1, and require proper timing alignment relative to the write command per tRTT specification.

What package type and dimensions does W631GG6MB15I TR use?

W631GG6MB15I TR uses a 96-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 7.5 mm × 13 mm with 0.8 mm ball pitch and 1.0 mm maximum thickness. It complies with RoHS and lead-free manufacturing standards, and the ball map follows JEDEC MO-270AB mechanical specifications for DDR3 SDRAMs.

How does the RESET# pin function on W631GG6MB15I TR?

The RESET# pin on W631GG6MB15I TR is asynchronous and active-low. It initiates the power-up initialization sequence when asserted after VDD/VDDQ stabilization, forcing all internal registers to default states and resetting the DLL. It also serves as a functional reset during operation, requiring ≥200 ns pulse width and synchronization with CKE high to guarantee reliable entry into initialization state.

Can W631GG6MB15I TR operate in Auto Self-Refresh (ASR) mode at 105°C?

No - W631GG6MB15I TR is rated for –40°C to +95°C operation and does not support 105°C case temperature. Only the W631GG6MB15J variant is qualified up to +105°C and mandates ASR or Manual Self-Refresh mode above 85°C to maintain tREFI ≤ 3.9 µs. For W631GG6MB15I TR, ASR remains optional above 85°C but is not required until 95°C, where doubling refresh rate is enforced per JEDEC JESD79-3F.