Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Winbond Electronics Corporation W631GG6MB-15 TR

Part No.:
W631GG6MB-15 TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
96-VFBGA
Datasheet:
AetrixW631GG6MB-15 TR.pdf
Description:
IC DRAM 1GBIT PAR 96VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,344

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

W631GG6MB-15 TR from Winbond is a 1G-bit DDR3 SDRAM organized as 8M × 8 banks × 16 bits, supporting DDR3-1333 (9-9-9) operation at 667 MHz clock frequency with 1.5 V supply. It features eight internal banks, 8-bit prefetch architecture, programmable CAS latency (CL = 5–10), and on-die termination (ODT) for signal integrity in memory subsystems used in industrial embedded controllers and networking equipment.

For engineers reviewing the W631GG6MB-15 TR datasheet, W631GG6MB-15 TR pinout, W631GG6MB-15 TR application, or W631GG6MB-15 TR equivalent, key selection criteria include supported speed bin (DDR3-1333), operating temperature range (0°C to 95°C), VFBGA-96 package compatibility, and JEDEC-compliant power-down and self-refresh modes.

Technical Context

This DDR3 SDRAM implements source-synchronous I/O with differential DQS/DQS# strobes aligned to data edges during reads and center-aligned during writes. Its DLL aligns DQ and DQS transitions with CK/CK#, enabling stable timing at 667 MHz. The device supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, and burst lengths of 8 or 4 via mode register or on-the-fly selection.

It integrates ZQ calibration for output driver and ODT impedance tuning using an external 240 Ω resistor, and supports dynamic ODT (Rtt_WR) with programmable termination values. Reset is asynchronous via RESET# pin, and initialization requires stable power-up sequence followed by mode register programming for CL, CWL, ODT, and PASR configuration.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density1 G-bit (8M words × 8 banks × 16 bits)
Data Rate1333 MT/s (DDR3-1333, fCK = 667 MHz)
CAS LatencyCL = 5, 6, 7, 8, 9, 10 (JEDEC-compliant timing)
Supply VoltageVDD/VDDQ = 1.5 V ± 0.075 V (SSTL_15 interface)
Operating Temp0°C ≤ TCASE ≤ 95°C (commercial grade)
PackageVFBGA-96 (7.5 mm × 13 mm, 1.0 mm height, RoHS-compliant)
Refresh IntervaltREFI = 7.8 µs (0°C–85°C), 3.9 µs (85°C–95°C)
Power ModesPrecharged Power Down, Active Power Down, Self-Refresh, Auto Self-Refresh (ASR)

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint and 0.8 mm ball pitch; lead-free, RoHS-compliant construction.

Pin/TerminalCircuit RoleDesign Meaning
A1CKDifferential clock input (rising edge latches commands)
A2CK#Inverted differential clock input (cross-point defines latch point)
B1RESET#Asynchronous active-low reset for power-up initialization
C1CS#Chip select; enables command decoding when low
D1RAS#Row address strobe; initiates ACT, PRE, REF commands
E1CAS#Column address strobe; controls READ/WRITE access
F1WE#Write enable; determines READ vs WRITE operation
G1BA0–BA2Bank address inputs; select one of eight internal banks
H1A0–A15Address inputs; row/column addressing with multiplexing
J1DQ0–DQ1516-bit bidirectional data bus; double-data-rate transfers
K1DQS0/DQS0#Differential data strobe pair; source-synchronous timing for DQ0–DQ7
L1DQS1/DQS1#Differential data strobe pair; source-synchronous timing for DQ8–DQ15
M1DM0–DM1Data mask inputs; suppress write data per byte lane
N1ODTOn-die termination control; enables/disables Rtt_NOM/Rtt_WR
P1VDD/VDDQ1.5 V core/I/O supply pins; decoupling required per JEDEC
R1VSSGround reference for all circuit domains
T1ZQCalibration reference pin; connects to 240 Ω resistor to ground for impedance tuning

Key Features

FeatureDesign Value
Programmable CAS Write Latency (CWL)CWL = 5–7 selectable per frequency; enables precise write timing alignment with DQS
Multi-Purpose Register (MPR)Predefined bit pattern readout for system-level timing calibration without disturbing memory contents
Write Leveling SupportEnables controller to calibrate DQS-to-CK skew per rank; critical for reliable high-speed writes
Dynamic ODT (Rtt_WR)Termination activated only during WRITE bursts; reduces noise and improves signal integrity on shared DQ bus
Partial Array Self-Refresh (PASR)Reduces self-refresh current by refreshing only active banks; extends battery life in portable systems
Auto Self-Refresh (ASR)Temperature-triggered refresh rate adjustment; maintains data retention at extended case temperatures up to 95°C

Applications

Industrial PLC Controller MemoryNetwork Switch Buffer

Use Scenario: Real-time deterministic execution of ladder logic and I/O scanning in programmable logic controllers requiring non-volatile program storage and fast data buffering.

IC Role / Device Role / Timing Role: Primary working memory for CPU instruction/data cache and real-time buffer for fieldbus communication stacks.

Use Value: DDR3-1333 bandwidth meets deterministic scan cycle timing; 0°C–95°C rating ensures reliability in cabinet-mounted enclosures without forced cooling.

Use Scenario: Packet buffering and forwarding table storage in Layer 2/L3 Ethernet switches handling 1 Gbps line rates with low-latency queuing.

IC Role / Device Role / Timing Role: Shared packet buffer memory accessed concurrently by ingress/egress engines and management CPU.

Use Value: Eight-bank architecture enables concurrent access across traffic queues; dynamic ODT minimizes inter-lane crosstalk during burst writes.

Medical Imaging Front-EndVideo Surveillance DVR

Use Scenario: Temporary frame storage and pixel processing pipeline in ultrasound or digital X-ray acquisition systems with strict EMI and thermal constraints.

IC Role / Device Role / Timing Role: High-bandwidth frame buffer interfacing directly to image sensor ADC and FPGA-based processing engine.

Use Value: SSTL_15 signaling ensures clean signal integrity near analog front-end; precharged power-down mode reduces idle power between image bursts.

Use Scenario: Multi-channel video encode/decode buffer in embedded NVRs recording 4K streams from IP cameras with motion detection triggers.

IC Role / Device Role / Timing Role: Unified memory pool for H.264/H.265 encoder input buffers, decoded preview frames, and metadata tables.

Use Value: 16-bit bus width matches typical SoC memory controllers; ASR mode maintains data integrity during ambient temperature fluctuations in unventilated enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MT41K128M16JT-125:K1 G-bit DDR3L (1.35 V), -125 speed grade (DDR3L-1600), 96-ball VFBGA, same pinout but lower voltage requirementRequires 1.35 V supply rail; not drop-in compatible with 1.5 V systems without regulator redesignSelect if system uses DDR3L infrastructure and needs higher bandwidth (1600 MT/s) with reduced power
IS43TR16128B-15HBL1 G-bit DDR3, DDR3-1333 speed grade (-15), 96-ball VFBGA, identical voltage and timing specs but different manufacturer-specific ODT timing behaviorSame commercial temp range and pinout; minor tODT/tZQ variations require validation in high-density layoutsValid alternative where Winbond supply continuity is constrained; verify ZQ calibration stability under thermal cycling

Compared with MT41K128M16JT-125:K and IS43TR16128B-15HBL, the W631GG6MB-15 TR offers guaranteed 1.5 V operation and JEDEC-compliant DDR3-1333 timing at 0°C–95°C, making it suitable for legacy 1.5 V memory interfaces where voltage scaling is not feasible.

Availability

W631GG6MB-15 TR is available at Aetrix Electronics and suitable for industrial PLC controllers, network switch buffers, medical imaging front-ends, and video surveillance DVRs requiring stable component supply across extended product lifecycles.

Supply support for W631GG6MB-15 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W631GG6MB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for embedded systems demanding robust thermal performance, JEDEC compliance, and long-term supply assurance in harsh environments.

FAQ

What is the maximum clock frequency supported by the W631GG6MB-15 TR?

The W631GG6MB-15 TR supports a maximum clock frequency of 667 MHz, corresponding to DDR3-1333 data rate (1333 MT/s). This is defined by its -15 speed grade and validated under 0°C to 95°C case temperature with 1.5 V ± 0.075 V supply. The device does not support higher bins such as DDR3-1600 or DDR3-1866; attempting to operate beyond 667 MHz violates JEDEC timing specifications and may cause data corruption.

Does the W631GG6MB-15 TR support automatic self-refresh (ASR) mode?

Yes, the W631GG6MB-15 TR supports Auto Self-Refresh (ASR) mode via MR2 bit A6. When enabled, ASR automatically adjusts refresh rate based on die temperature-doubling frequency to 3.9 µs interval above 85°C. This feature maintains data retention integrity at elevated case temperatures up to 95°C without host intervention, and is essential for thermal management in sealed industrial enclosures where the W631GG6MB-15 TR operates.

What package type and ball count does the W631GG6MB-15 TR use?

The W631GG6MB-15 TR uses a 96-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 7.5 mm × 13 mm with 0.8 mm ball pitch. It is lead-free and RoHS-compliant. This package matches JEDEC MO-270AB standard and is mechanically and electrically compatible with other DDR3 SDRAMs in the same VFBGA-96 footprint, enabling layout reuse across speed grades within the W631GG6MB family.

Can the W631GG6MB-15 TR be used in systems requiring extended temperature operation beyond 95°C?

No, the W631GG6MB-15 TR is rated for 0°C ≤ TCASE ≤ 95°C only. For operation up to 105°C, Winbond offers the W631GG6MB15J variant with industrial-plus qualification. Using the W631GG6MB-15 TR above 95°C violates its specified operating conditions, risks accelerated parameter drift, and invalidates JEDEC timing margins-particularly for tREFI, tRAS, and ODT stability-making it unsuitable for such applications.

How does write leveling function in the W631GG6MB-15 TR?

Write leveling in the W631GG6MB-15 TR allows the memory controller to calibrate DQS-to-CK skew per rank by issuing a special MRS command that places the DRAM in write-leveling mode. In this mode, the DRAM echoes back CK on DQS, enabling the controller to adjust delay taps until alignment is achieved. This process is mandatory for reliable DDR3-1333 operation and is supported natively by the W631GG6MB-15 TR per JEDEC JESD79-3F specification.

W631GG6MB-15 TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
96-VFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR3
Memory Size:
1Gbit
Memory Organization:
64M x 16
Memory Interface:
Parallel
Clock Frequency:
667 MHz
Write Cycle Time - Word, Page:
-
Access Time:
20 ns
Voltage - Supply:
1.425V ~ 1.575V
Operating Temperature:
0°C ~ 95°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
96-VFBGA (7.5x13)

W631GG6MB-15 TR FAQ

1.How can I place an order for W631GG6MB-15 TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W631GG6MB-15 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W631GG6MB-15 TR reliable?

The price and inventory of W631GG6MB-15 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GG6MB-15 TR is usually 5 days.

3.What payment methods are accepted for W631GG6MB-15 TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GG6MB-15 TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W631GG6MB-15 TR?

W631GG6MB-15 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W631GG6MB-15 TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W631GG6MB-15 TR?

For technical support, including W631GG6MB-15 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GG6MB-15 TR requirements.

6.How does Aetrix verify that W631GG6MB-15 TR is sourced from the original manufacturer or authorized distributors?

All W631GG6MB-15 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GG6MB-15 TR meets industry standards.

7.What is the process for return or replacement of W631GG6MB-15 TR?

All W631GG6MB-15 TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GG6MB-15 TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W631GG6MB-15 TR part is unused and in its original packaging.

Return procedure for W631GG6MB-15 TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

W631GG6MB-15 TR Tags

  • W631GG6MB-15 TR
  • W631GG6MB-15 TR PDF
  • W631GG6MB-15 TR Datasheet
  • W631GG6MB-15 TR Specifications
  • W631GG6MB-15 TR Images
  • Winbond Electronics Corporation
  • Winbond Electronics Corporation W631GG6MB-15 TR
  • Buy W631GG6MB-15 TR
  • W631GG6MB-15 TR Price
  • W631GG6MB-15 TR Distributor
  • W631GG6MB-15 TR Supplier
  • W631GG6MB-15 TR Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER