Winbond Electronics Corporation W631GG6NB-09

Overview

W631GG6NB-09 from Winbond Electronics is a 1 Gbit DDR3 SDRAM organized as 8M × 8 banks × 16 bits, supporting DDR3-2133 (14-14-14) operation at 1066 MHz clock frequency with CAS Latency 14, VDD/VDDQ = 1.5 V ± 0.075 V, and SSTL_15 interface compliance - deployed in high-performance embedded computing, networking baseband processors, and industrial control memory subsystems.

For engineers reviewing the W631GG6NB-09 datasheet, W631GG6NB-09 pinout, W631GG6NB-09 application, or W631GG6NB-09 equivalent, key selection considerations include its -09 speed grade DDR3-2133 timing (tAA ≤ 13.09 ns, tRCD ≤ 13.09 ns), industrial-grade thermal range (0°C to 95°C case temperature), VFBGA-96 package compatibility, and support for ZQ calibration, dynamic ODT, and write leveling.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-aligned DQ/DQS timing for source-synchronous data transfer, and programmable additive latency (AL = 0, CL−1, CL−2) to decouple command bus efficiency from CAS latency. It supports both synchronous and asynchronous ODT modes with RTT_NOM, RTT_WR, and RTT_PARK configurations.

Functional operation includes posted CAS#, on-the-fly burst length selection (BL8/BC4), auto-precharge, multi-purpose register (MPR) readout for system-level timing calibration, and dual-mode refresh (Auto Refresh, Self-Refresh with ASR/PASR). The device uses differential CK/CK# inputs latched at cross-point and bi-directional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes.

Key Specifications

Pinout & Package

VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm height) with ball pitch of 0.8 mm, compliant with JEDEC MO-270AB, using lead-free, RoHS-compliant materials. Ball map follows standard DDR3 SDRAM layout with dedicated VDD, VDDQ, VSS, VSSQ, address/command, data, strobe, and control balls.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K128M16HA-125:E and IS43TR16128B-125KBL, W631GG6NB-09 delivers 33% higher bandwidth (2133 vs. 1600 MT/s), guaranteed operation up to 95°C case temperature, and power-saving features (PASR/ASR) that reduce self-refresh current by ≥50% under partial load - critical for thermally constrained or battery-backed systems.

Availability

W631GG6NB-09 is available at Aetrix Electronics and suitable for networking baseband processing, industrial PLC memory buffering, and medical imaging frame storage requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GG6NB-09 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

W631GG6NB-09 belongs to Winbond's DDR3 SDRAM product line designed for high-reliability, thermally robust memory subsystems in infrastructure equipment where JEDEC-compliant timing, ZQ calibration, and extended-temperature operation are mandatory.

FAQ

What is the maximum clock frequency supported by W631GG6NB-09?

W631GG6NB-09 supports a maximum clock frequency of 1066 MHz, enabling DDR3-2133 operation at 2133 MT/s. This is validated under VDD/VDDQ = 1.5 V ± 0.075 V and 0°C ≤ TCASE ≤ 95°C. The device achieves tAA, tRCD, and tRP minimums of 13.09 ns each at this speed grade, meeting JEDEC DDR3-2133 (14-14-14) timing specifications. W631GG6NB-09 must be operated within these limits to guarantee reliable burst read/write and refresh behavior.

Does W631GG6NB-09 support write leveling and how is it implemented?

Yes, W631GG6NB-09 supports write leveling as defined in JEDEC JESD79-3F. It uses the DQS strobe to calibrate per-lane skew relative to CK during initialization. The DRAM enters write leveling mode via MRS command (MR1 A10 = 1), then outputs a predefined pattern on DQ while the controller adjusts delay taps on DQS. W631GG6NB-09 provides dedicated timing parameters (tWLO, tWLDQ) and functional flow in sections 8.9 and 10.16.4 of its datasheet to ensure robust implementation.

What package type and ball count does W631GG6NB-09 use?

W631GG6NB-09 uses a VFBGA-96 package measuring 7.5 mm × 13 mm with 1.0 mm height and 0.8 mm ball pitch. It conforms to JEDEC MO-270AB and is lead-free/RoHS-compliant. The 96-ball layout includes dedicated VDD/VDDQ, VSS/VSSQ, address/command, 16-bit DQ, DQS/DQS#, DM, RESET#, ODT, and ZQ terminals - identical to industry-standard DDR3 SDRAM footprints for drop-in PCB compatibility.

Can W631GG6NB-09 operate in Self-Refresh mode at 95°C case temperature?

Yes, W631GG6NB-09 supports Self-Refresh operation at TCASE = 95°C when configured for Auto Self-Refresh (ASR) mode (MR2 A6 = 1b) or Manual Self-Refresh with Extended Temperature Range (MR2 A6 = 0b, A7 = 1b). At this temperature, tREFI is reduced to 3.9 µs (doubled refresh rate), and IDD6 remains ≤10 mA. This capability is explicitly validated per section 4 and footnote 4 of the W631GG6NB datasheet revision A01.

What termination resistors are required for proper ZQ calibration of W631GG6NB-09?

W631GG6NB-09 requires a single 240 Ω ± 1% external resistor connected between the ZQ pin and VSS (ground), with ≤1 pF capacitive loading. This resistor serves as the reference for calibrating both output driver strength and on-die termination (ODT) impedances. The ZQ calibration command (ZQCL or ZQCS) must be issued after power-up and periodically during operation - typically every 128 ms - to maintain impedance accuracy across voltage and temperature drift. W631GG6NB-09 specifies ZQ tolerance and layout guidelines in section 8.18.3.