Winbond Electronics Corporation W631GG6NB09I TR

Overview

W631GG6NB09I TR from Winbond is a 1 Gbit DDR3 SDRAM organized as 8M × 8 banks × 16 bits, supporting DDR3-2133 (14-14-14) operation at up to 1066 MHz clock frequency with CAS Latency 14, 1.5 V core/interface supply, and industrial temperature range (–40°C to +95°C). It serves as main memory in embedded computing, networking processors, and industrial controllers requiring high-bandwidth, low-latency synchronous DRAM with ZQ calibration and dynamic ODT.

For engineers reviewing the W631GG6NB09I TR datasheet, W631GG6NB09I TR pinout, W631GG6NB09I TR application, or W631GG6NB09I TR equivalent, this page delivers verified DDR3 timing parameters, ball configuration, ODT control modes, power-down behavior, and JEDEC-compliant industrial-grade thermal specifications - all confirmed for the exact -09I speed grade and VFBGA-96 package.

Technical Context

This device implements an 8-bank, 8-bit prefetch DDR3 architecture with differential CK/CK# and DQS/DQS# signaling, DLL-aligned data strobes, and SSTL_15 I/O interface. It supports programmable CAS Write Latency (CWL = 5–10), additive latency (AL = 0, CL−1, CL−2), and posted CAS for command bus efficiency.

Key operational features include asynchronous RESET#, on-die termination (ODT) with synchronous/dynamic modes, ZQ calibration using external 240 Ω resistor, multi-purpose register (MPR) for timing calibration pattern readout, and write leveling for system-level signal integrity tuning - all implemented per JEDEC JESD79-3F specification for DDR3-2133 compliance.

Key Specifications

Pinout & Package

VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm thickness) with 96 solder balls arranged in 7 rows × 14 columns (including corner voids), compliant with JEDEC MO-270AB standard. Ball pitch is 0.8 mm; pad layout optimized for controlled-impedance DDR3 routing and thermal dissipation in industrial PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with IS43TR16128B-125KBL and MT41K128M16HA-125:E, the W631GG6NB09I TR delivers higher bandwidth (2133 vs 1600 MT/s) and extended thermal management (ASR/PASR), making it optimal for bandwidth-constrained industrial compute; however, its 1.5 V requirement excludes use in DDR3L-only platforms.

Availability

W631GG6NB09I TR is available at Aetrix Electronics and suitable for industrial PLCs, networking processors, medical imaging controllers, avionics displays, and embedded vision systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GG6NB09I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W631GG6NB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for high-reliability embedded systems demanding extended temperature operation, JEDEC compliance, and robust power management features like ASR and PASR.

FAQ

What is the maximum clock frequency supported by the W631GG6NB09I TR?

The W631GG6NB09I TR supports a maximum clock frequency of 1066 MHz, enabling DDR3-2133 operation at 2133 MT/s. This is validated for the -09I speed grade under industrial temperature conditions (–40°C to +95°C) with CL=14 and tAA min = 13.09 ns. The device achieves this using DLL-aligned DQS-to-CK timing and SSTL_15 I/O drive strength calibrated via ZQ.

Does the W631GG6NB09I TR support automatic refresh at elevated temperatures?

Yes, the W631GG6NB09I TR supports Auto Self-Refresh (ASR) mode, which automatically doubles the refresh rate (tREFI = 3.9 µs) when case temperature exceeds 85°C. This feature is enabled by setting MR2[A6] = 1 and is mandatory for reliable operation at +95°C ambient. ASR eliminates host software intervention while maintaining full JEDEC data retention guarantees.

How does dynamic ODT function in the W631GG6NB09I TR?

In the W631GG6NB09I TR, dynamic ODT (Rtt_WR) activates on-die termination only during write operations, using MR2[A9:A7] to select 40 Ω, 60 Ω, or 120 Ω termination on DQ/DQS lines. This reduces standby power versus always-on ODT and improves write eye opening by matching line impedance precisely when drivers are active - critical for signal integrity at DDR3-2133 speeds.

Can the W631GG6NB09I TR be used in place of standard DDR3-2133 modules?

No - the W631GG6NB09I TR is a discrete 1 Gbit DDR3 SDRAM component (VFBGA-96), not a module. It requires full DDR3 controller integration, proper termination design, and JEDEC-compliant layout (e.g., matched-length DQ/DQS/CK traces). Module replacement would require redesigning the memory subsystem around this bare die, not swapping into existing UDIMM/SO-DIMM slots.

What is the purpose of the Multi-Purpose Register (MPR) in the W631GG6NB09I TR?

The MPR in the W631GG6NB09I TR provides a fixed 128-bit calibration pattern readable via standard READ commands. This pattern is used during system bring-up to measure DQ-to-DQS timing margins and validate write leveling setup. Unlike general-purpose registers, the MPR is hardwired for timing analysis - no user data storage - and is accessed only through MR3[A1:A0] = 0b11.