Winbond Electronics Corporation W631GG6NB-09 TR

Overview

W631GG6NB-09 TR from Winbond is a 1Gbit DDR3 SDRAM organized as 8M × 8 banks × 16-bit, supporting DDR3-2133 (1066 MHz clock) with CL=14, tRCD/tRP/tRC = 14-14-14 ns timing, and VDD/VDDQ = 1.5 V ± 75 mV. It features on-die termination (ODT), ZQ calibration, programmable CAS Write Latency (CWL=10), and asynchronous RESET# for power-up initialization. Used in high-bandwidth memory subsystems of networking routers and industrial control CPUs.

For engineers reviewing the W631GG6NB-09 TR datasheet, W631GG6NB-09 TR pinout, W631GG6NB-09 TR application, or W631GG6NB-09 TR equivalent, this page delivers verified DDR3-2133 timing parameters, ball configuration, ODT and ZQ calibration behavior, thermal grade (-0°C to +95°C case), and JEDEC-compliant burst, refresh, and power-down operation - all specific to the -09 speed grade and TR tape-and-reel packaging.

Technical Context

This device implements an 8-bank, 8-bit prefetch DDR3 architecture with differential CK/CK# and DQS/DQS# interfaces compliant with SSTL_15. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), enabling efficient command bus utilization during high-frequency operation.

Key operational modes include auto-precharge, burst read/write with DM masking, dynamic ODT (Rtt_WR), partial array self-refresh (PASR), and write leveling for system-level timing calibration. The -09 speed grade mandates tREFI = 7.8 µs at 0–85°C and 3.9 µs above 85°C, requiring MR2 A6/A7 configuration for extended temperature support up to 95°C.

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and window-type construction optimized for thermal dissipation and signal routing density in space-constrained SoC memory interfaces.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K128M16JT-125:K and IS43TR16128B-125KBL, the W631GG6NB-09 TR delivers 33% higher bandwidth (34.1 vs. 25.6 GB/s), mandatory write leveling for high-speed layout compliance, and PASR for >40% self-refresh power reduction - making it essential for thermally constrained, latency-sensitive embedded systems.

Availability

W631GG6NB-09 TR is available at Aetrix Electronics and suitable for networking infrastructure, industrial PLC controllers, medical imaging front-ends, and automotive ADAS domain controllers requiring stable component supply, long-term lifecycle assurance, and JEDEC-compliant DDR3-2133 performance.

Supply support for W631GG6NB-09 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W631GG6NB series belongs to Winbond's high-performance DDR3 SDRAM product line, designed specifically for bandwidth-intensive embedded applications demanding JEDEC-compliant DDR3-2133 operation, extended temperature reliability, and advanced power management features like PASR and ASR.

FAQ

What is the maximum clock frequency supported by W631GG6NB-09 TR?

The W631GG6NB-09 TR supports a maximum clock frequency of 1066 MHz, enabling DDR3-2133 data transfer rates (2133 MT/s). This is validated under VDD/VDDQ = 1.5 V ± 0.075 V and 0°C ≤ TCASE ≤ 95°C, with tRCD/tRP/tRC = 14-14-14 ns timing. Operation beyond this bin requires derating or validation against JEDEC JESD79-3F specification.

Does W631GG6NB-09 TR support write leveling, and how is it implemented?

Yes, W631GG6NB-09 TR supports hardware-assisted write leveling using its Multi Purpose Register (MPR) and DQS gating logic. During initialization, the controller issues MPR read commands to output a predefined bit pattern, then adjusts DQS delay until valid data is captured - compensating for board-level skew between CK and DQS. This function is mandatory for reliable DDR3-2133 operation on dense PCBs.

What is the purpose of the ZQ pin on W631GG6NB-09 TR, and what external component is required?

The ZQ pin on W631GG6NB-09 TR connects to an external 240 Ω ±1% precision resistor to ground, enabling factory and runtime calibration of output driver strength and on-die termination (ODT) impedances. This ensures ±2% impedance accuracy across voltage and temperature variations, critical for maintaining signal integrity at 1066 MHz clock speeds.

Can W631GG6NB-09 TR operate at temperatures above 85°C, and what configuration is needed?

Yes, W631GG6NB-09 TR is rated for 0°C ≤ TCASE ≤ 95°C. Above 85°C, tREFI must be halved to 3.9 µs (doubling refresh rate), which requires configuring MR2 A6=1b (enable ASR) or MR2 A6=0b + A7=1b (Manual Self-Refresh with Extended Temp Range). Failure to reconfigure MR2 will result in data retention failure during extended high-temperature operation.

How does dynamic ODT (Rtt_WR) function in W631GG6NB-09 TR, and when is it activated?

In W631GG6NB-09 TR, dynamic ODT (Rtt_WR) activates ODT termination on DQ/DQS/DM lines only during WRITE operations, as controlled by MR2. This improves write signal integrity without loading read paths, reducing crosstalk and stub reflections. Activation occurs automatically upon WRITE command issuance and deactivates after tWTRL, eliminating need for manual ODT timing control in the controller.