Winbond Electronics Corporation W631GG6NB11I

Overview

W631GG6NB11I from Winbond Electronics is a 1 Gbit DDR3 SDRAM organized as 8M × 8 banks × 16 bits, supporting DDR3-1866 (13-13-13) operation at up to 933 MHz clock frequency with CAS Latency 13, operating across –40°C to +95°C industrial temperature range, and packaged in a 96-ball VFBGA (7.5 × 13 mm, 1.0 mm height) for use in embedded computing, networking infrastructure, and industrial control memory subsystems.

For engineers reviewing the W631GG6NB11I datasheet, W631GG6NB11I pinout, W631GG6NB11I application, or W631GG6NB11I equivalent, this page delivers verified DDR3 timing parameters, industrial-grade thermal validation, VFBGA ball mapping, ODT configuration options, and JEDEC-compliant power-down and self-refresh behavior - all specific to the W631GG6NB11I speed/temperature variant.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks, differential CK/CK# clock inputs synchronized at the cross-point, and bi-directional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. It supports programmable CAS Write Latency (CWL = 5–9), additive latency (AL = 0, CL−1, CL−2), and posted CAS for command bus efficiency.

The device integrates on-die termination (ODT) with synchronous and dynamic modes, ZQ calibration using an external 240 Ω resistor, asynchronous RESET#, and system-level timing calibration via write leveling and Multi-Purpose Register (MPR) readout of predefined bit patterns - all compliant with JEDEC DDR3 standard JESD79-3F.

Key Specifications

Pinout & Package

VFBGA-96 package (7.5 mm × 13 mm, 1.0 mm height) with ball pitch of 0.8 mm, RoHS-compliant, lead-free construction. Ball layout follows JEDEC MO-273 standard for DDR3 SDRAM.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K128M16HA-125:E and IS43TR16128B-125KBL, the W631GG6NB11I uniquely delivers DDR3-1866 performance with full industrial temperature validation, dynamic ODT, and write leveling - enabling higher bandwidth and tighter signal integrity margins in thermally demanding embedded systems.

Availability

W631GG6NB11I is available at Aetrix Electronics and suitable for industrial PLCs, telecom baseband units, medical imaging controllers, and automotive ADAS domain controllers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GG6NB11I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W631GG6NB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for applications demanding extended temperature operation, JEDEC-compliant power management, and robust signal integrity in space-constrained embedded platforms.

FAQ

What is the maximum clock frequency supported by the W631GG6NB11I?

The W631GG6NB11I supports a maximum clock frequency of 933 MHz, enabling DDR3-1866 data rates (1866 MT/s). This is validated under industrial temperature conditions (–40°C to +95°C) with CL = 13 and t_AA/t_RCD/t_RP = 13.91 ns minimum, per JEDEC JESD79-3F specification and Winbond's A01 revision datasheet.

Does the W631GG6NB11I support dynamic on-die termination (Rtt_WR)?

Yes, the W631GG6NB11I supports dynamic ODT (Rtt_WR) as defined in MR2. When enabled (MR2 A1–A0 = 0b10), termination is activated only during WRITE bursts on DQ/DQS lines, improving signal integrity and reducing power consumption compared to static ODT. This feature is fully operational across the –40°C to +95°C range.

How does the W631GG6NB11I handle refresh at elevated temperatures?

At case temperatures above 85°C, the W631GG6NB11I requires t_REFI = 3.9 µs (doubled refresh rate). This is achieved either via Auto Self-Refresh (ASR, MR2 A6 = 1b) or Manual Self-Refresh with Extended Temperature Range (MR2 A6 = 0b, A7 = 1b), both validated for reliable operation up to +95°C.

What package type and dimensions does the W631GG6NB11I use?

The W631GG6NB11I uses a 96-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 7.5 mm × 13 mm with 0.8 mm ball pitch and 1.0 mm maximum height. It complies with JEDEC MO-273 and is RoHS-compliant with lead-free terminations.

Can the W631GG6NB11I be used as a direct replacement for DDR3-1600 or DDR3-1333 parts?

The W631GG6NB11I is not a pin-compatible drop-in replacement for slower DDR3 variants due to stricter timing requirements and mandatory CL13/CWL9 configuration at 933 MHz. However, it can operate at lower frequencies (e.g., DDR3-1600) with appropriate SPD programming and controller configuration - subject to validation of t_AA, t_RCD, and t_RP margins.