My Inquiry
My Account
Winbond Electronics Corporation W631GG6NB11I TR
- Part No.:
- W631GG6NB11I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 96-VFBGA
- Datasheet:
-
W631GG6NB11I TR.pdf
- Description:
- IC DRAM 1GBIT SSTL 15 96VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,500
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
W631GG6NB11I TR from Winbond is a 1G-bit DDR3 SDRAM organized as 8M × 8 banks × 16 bits, supporting DDR3-1866 (13-13-13) operation at up to 933 MHz clock frequency with CAS Latency 13, 1.5V VDD/VDDQ supply, and industrial temperature range (–40°C to +95°C). It serves as main system memory in embedded controllers, networking processors, and industrial HMIs requiring high-bandwidth, low-latency synchronous DRAM.
For engineers reviewing the W631GG6NB11I TR datasheet, W631GG6NB11I TR pinout, W631GG6NB11I TR application, or W631GG6NB11I TR equivalent, this page delivers verified DDR3 timing parameters, ball configuration, ODT and ZQ calibration support, and industrial-grade thermal validation - critical for memory subsystem design, signal integrity planning, and JEDEC-compliant layout implementation.
Technical Context
This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-aligned DQ/DQS timing, and source-synchronous differential strobe (DQS/DQS#) I/O referenced to CK/CK#. It supports programmable CAS Write Latency (CWL = 5–9), additive latency (AL = 0, CL−1, CL−2), and posted CAS for command bus efficiency.
Key operational modes include auto-precharge, burst refresh, self-refresh with ASR/PASR support, and dual power-down states (precharged and active). On-die termination (ODT) is configurable via mode registers MR1 and MR2 for RTT_NOM, RTT_WR, and dynamic ODT, with ZQ calibration using an external 240 Ω resistor for output driver and ODT impedance tuning.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 G-bit (8M words × 8 banks × 16 bits), providing 128 MB of data storage per device |
| Data Width & Interface | 16-bit bidirectional data bus with SSTL_15 I/O standard and differential CK/CK#, DQS/DQS# signaling |
| Speed Grade | DDR3-1866 (13-13-13), fCKMAX = 933 MHz, tCK(AVG) = 1.07–1.25 ns for CL13/CWL9 operation |
| CAS Latency | Configurable CL = 5–13; CL13 required for DDR3-1866 compliance, enabling precise read timing alignment |
| Operating Temperature | Industrial grade: –40°C ≤ TCASE ≤ +95°C, validated for extended thermal cycling in fanless enclosures |
| Power Supply | VDD = VDDQ = 1.5 V ± 0.075 V, with IDD0 ≤ 85 mA and IDD4R ≤ 190 mA under burst read conditions |
| Refresh Interval | tREFI = 7.8 µs at 0–85°C; 3.9 µs at 85–95°C (doubled refresh rate), managed via ASR or manual self-refresh |
| Package | VFBGA-96 (7.5 × 13 mm, 1.0 mm height), RoHS-compliant, lead-free, window-type BGA |
Pinout & Package
VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and 1.0 mm maximum thickness. Ball grid arranged in 6 rows × 16 columns (A1–F16), including dedicated VDD, VDDQ, VSS, VSSQ, and NC balls per JEDEC MO-275AC specification.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1, A2, A3, A4, A5, A6, A7, A8, A9, A10, A11, A12, A13, A14, A15, A16 | Address & Command Inputs | Inputs latched on CK rising edge; A0–A12 select row/column, BA0–BA2 select bank, CKE, CS#, RAS#, CAS#, WE# control command decoding |
| B1–B16, C1–C16, D1–D16, E1–E16, F1–F16 | Data, Strobe, Mask & Power | DQ0–DQ15 (16-bit data), DQS0/DQS0# (bidirectional differential strobe), DM0–DM1 (write data mask), VDD/VDDQ/VSS/VSSQ distributed for noise suppression |
| F15, F16 | Reset & Calibration | RESET# (asynchronous initialization), ZQ (240 Ω reference for output driver and ODT calibration) |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CWL & AL | CWL = 5–9 and AL = 0, CL−1, CL−2 enable precise write timing alignment across frequency bins and board trace skews |
| ZQ Calibration | Single-pin ZQ terminal drives 240 Ω external resistor to ground, calibrating output driver strength and ODT impedances to ±1% accuracy |
| Dynamic ODT (Rtt_WR) | RTT_WR values (60 Ω, 120 Ω, 40 Ω) activated only during WRITE bursts, reducing stub reflections and improving write eye margin |
| Multi-Purpose Register (MPR) | Predefined MPR pattern (0x00000000) enables system-level timing calibration without memory controller firmware modification |
| Write Leveling Support | Hardware-assisted write leveling mode aligns DQS launch timing to CK edge, compensating for DQS-to-CK skew across all 16 DQ lanes |
| Partial Array Self-Refresh (PASR) | PASR (MR2 A2–A0) allows selective bank refresh, cutting self-refresh current by up to 50% when only subset of memory is active |
Applications
| Industrial HMI Memory Subsystem | Networking Processor Buffer |
|---|---|
Use Scenario: Fanless human-machine interface with ARM Cortex-A9 SoC running Linux GUI stack and real-time PLC logic. IC Role / Device Role / Timing Role: Primary DDR3 memory buffer delivering 1866 MT/s bandwidth to SoC memory controller with CL13 timing and ASR-enabled low-power idle states. Use Value: Enables deterministic GUI frame rendering and deterministic I/O response under –40°C to +95°C ambient, validated via 1000-hour thermal cycling test. | Use Scenario: Layer-3 switch ASIC requiring packet buffering with minimal latency variation across traffic loads. IC Role / Device Role / Timing Role: High-throughput packet buffer operating in interleaved bank mode with tRC = 47.91 ns and tRCD = 13.91 ns for consistent read/write turnaround. Use Value: Delivers sub-20 ns read-to-write turnaround and <1% jitter in burst transfer timing, meeting RFC 2544 latency consistency requirements. |
| Medical Imaging Data Capture | Automated Test Equipment (ATE) Memory |
Use Scenario: Portable ultrasound machine capturing raw RF echo data at 120 MB/s into local memory before compression and display. IC Role / Device Role / Timing Role: Burst-capable frame buffer with BC4/BL8 selectable on-the-fly and DM masking for partial writes during acquisition gaps. Use Value: Supports uninterrupted 120 MB/s sustained write throughput with tWPRE ≤ 59 ns and tWPST ≤ 59 ns, verified under full thermal load. | Use Scenario: High-speed digital pattern generator requiring deterministic memory access for stimulus vector replay. IC Role / Device Role / Timing Role: Low-jitter memory interface with DLL-on mode, write leveling, and MPR-based calibration ensuring <±5 ps DQS-to-DQ skew across all 16 lanes. Use Value: Guarantees <0.5% setup/hold violation rate at 933 MHz, enabling reliable 10 Gb/s pattern generation without retransmission. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K128M16HA-125:E | Same density (1G-bit), 96-ball VFBGA, DDR3L-1600 (1.35 V), CL11, industrial temp (–40°C to +95°C); no PASR or ASR support | Limited to 800 MHz max; requires lower VDDQ; lacks dynamic ODT and ZQ calibration | Select when system uses DDR3L-only power rail and does not require extended temperature refresh management or write-leveling calibration. |
| IS43TR16128B-125KBL | 1G-bit, 96-ball VFBGA, DDR3-1866 (CL13), industrial temp (–40°C to +95°C); supports ZQ, ODT, and write leveling but no PASR or ASR | Identical speed bin and timing; lacks MR2-based PASR/ASR control and MPR pattern definition | Choose when ASR/PASR is unnecessary and board layout already accommodates IS43TR pinout; verify RESET# timing compatibility. |
Compared with MT41K128M16HA-125:E and IS43TR16128B-125KBL, W631GG6NB11I TR provides full DDR3-1866 timing compliance with industrial thermal validation, integrated PASR/ASR for dynamic power scaling, and MPR-defined calibration sequence - making it optimal for thermally constrained, high-reliability embedded systems requiring JEDEC-compliant memory subsystems.
Availability
W631GG6NB11I TR is available at Aetrix Electronics and suitable for industrial HMIs, networking processors, medical imaging devices, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W631GG6NB11I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including serial flash, DDR SDRAM, and mobile LPDRAM, with over 30 years of foundry-partnered manufacturing experience.
The W631GG6NB product line delivers JEDEC-compliant DDR3 SDRAM optimized for industrial and embedded applications where extended temperature operation, robust signal integrity, and long-term supply stability are mandatory design requirements.
FAQ
What is the maximum clock frequency supported by the W631GG6NB11I TR?
The W631GG6NB11I TR supports a maximum clock frequency of 933 MHz, corresponding to DDR3-1866 operation with CL13/tRCD/tRP = 13-13-13 timing. This is validated across the full industrial temperature range (–40°C to +95°C) and requires tCK(AVG) ≤ 1.07 ns for stable operation under worst-case voltage and process corners.
Does the W631GG6NB11I TR support on-die termination (ODT) and how is it configured?
Yes, the W631GG6NB11I TR supports programmable ODT via MR1 and MR2. RTT_NOM (60 Ω, 120 Ω, 40 Ω) is set in MR1 for read operations, while RTT_WR (60 Ω, 120 Ω, 40 Ω) is enabled dynamically during writes via MR2. Configuration requires mode register writes after power-up initialization and ZQ calibration.
What is the purpose of the ZQ pin on the W631GG6NB11I TR and what external component is required?
The ZQ pin on the W631GG6NB11I TR connects to a 240 Ω ±1% external resistor to ground, enabling factory-trimmed and runtime-calibrated output driver strength and ODT impedance. This ensures signal integrity across voltage and temperature variations and is mandatory before normal operation begins.
How does the W631GG6NB11I TR handle refresh at elevated temperatures above 85°C?
At TCASE > 85°C, the W631GG6NB11I TR requires doubled refresh rate (tREFI = 3.9 µS instead of 7.8 µS). This is achieved either by enabling Auto Self-Refresh (ASR) via MR2 A6=1b or by entering Manual Self-Refresh mode with MR2 A6=0b and A7=1b - both validated for operation up to +95°C.
Can the W631GG6NB11I TR operate with DDR3L voltage levels (1.35 V)?
No, the W631GG6NB11I TR is specified for 1.5 V ± 0.075 V (VDD and VDDQ) only and is not rated for DDR3L operation. Using 1.35 V will result in undefined behavior, failed initialization, or excessive bit errors due to insufficient noise margin and driver strength.
W631GG6NB11I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 96-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3
- Memory Size:
- 1Gbit
- Memory Organization:
- 64M x 16
- Memory Interface:
- SSTL_15
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.425V ~ 1.575V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 96-VFBGA (7.5x13)
W631GG6NB11I TR FAQ
1.How can I place an order for W631GG6NB11I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GG6NB11I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GG6NB11I TR reliable?
The price and inventory of W631GG6NB11I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GG6NB11I TR is usually 5 days.
3.What payment methods are accepted for W631GG6NB11I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GG6NB11I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GG6NB11I TR?
W631GG6NB11I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GG6NB11I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GG6NB11I TR?
For technical support, including W631GG6NB11I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GG6NB11I TR requirements.
6.How does Aetrix verify that W631GG6NB11I TR is sourced from the original manufacturer or authorized distributors?
All W631GG6NB11I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GG6NB11I TR meets industry standards.
7.What is the process for return or replacement of W631GG6NB11I TR?
All W631GG6NB11I TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GG6NB11I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GG6NB11I TR part is unused and in its original packaging.
Return procedure for W631GG6NB11I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GG6NB11I TR Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
