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Winbond Electronics Corporation W631GG6NB-11 TR

Name: W631GG6NB-11 TR
Brand: Winbond Electronics Corporation
SKU: W631GG6NB-11 TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W631GG6NB-11 TR

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 96-VFBGA

Datasheet:: W631GG6NB-11 TR.pdf

Description:: IC DRAM 1GBIT SSTL 15 96VFBGA

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Product details

Overview

W631GG6NB-11 TR from Winbond is a 1G-bit DDR3 SDRAM organized as 8M × 8 banks × 16 bits, compliant with DDR3-1866 (13-13-13) timing, operating at 1.5 V ± 75 mV, and rated for 0°C to 95°C case temperature. It supports programmable CAS Latency (CL = 5–11), CAS Write Latency (CWL = 5–9), and features on-die termination (ODT), ZQ calibration, and asynchronous RESET# for reliable memory subsystems in embedded computing and industrial controllers.

For engineers reviewing the W631GG6NB-11 TR datasheet, W631GG6NB-11 TR pinout, W631GG6NB-11 TR application, or W631GG6NB-11 TR equivalent, key selection considerations include its DDR3-1866 speed bin, VFBGA-96 package compatibility, SSTL_15 interface compliance, and support for write leveling, dynamic ODT, and partial array self-refresh (PASR) in thermally constrained systems.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access and high bandwidth efficiency. Its differential clock (CK/CK#) and bidirectional DQS/DQS# strobes support source-synchronous double-data-rate transfers, while DLL alignment ensures precise DQ-DQS timing relative to CK.

Functional operation includes programmable mode registers (MR0–MR3) for configuring burst length (BL8/BC4), read ordering (interleaved/nibble), additive latency (AL = 0, CL−1, CL−2), and power management modes including precharged/active power-down, self-refresh, and auto self-refresh (ASR) with temperature-aware refresh intervals.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	1 G-bit (8M words × 8 banks × 16 bits); enables 16 MB of 16-bit-wide memory per device in compact layouts.
Data Rate	DDR3-1866 (13-13-13); supports 933 MHz clock frequency with tAA ≤ 13.91 ns, suitable for mid-tier performance applications.
Supply Voltage	VDD/VDDQ = 1.5 V ± 0.075 V; requires tight regulation and decoupling to meet JEDEC SSTL_15 signaling integrity.
CAS Latency Range	CL = 5 to 11; allows trade-off between latency and timing margin across varying system clock stability and PCB trace lengths.
CAS Write Latency	CWL = 5 to 9; dynamically matched to operating frequency to maintain write timing closure under voltage/temperature variation.
Package	VFBGA-96 (7.5 × 13 mm, 1.0 mm height); RoHS-compliant lead-free ball grid array optimized for automated assembly and thermal dissipation.
Operating Temperature	0°C ≤ TCASE ≤ 95°C; validated for commercial/industrial environments without extended temperature derating.
Refresh Interval	tREFI = 7.8 µs (0–85°C), 3.9 µs (85–95°C); mandates doubled refresh rate above 85°C, managed via ASR or manual self-refresh.

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and 1.0 mm maximum thickness. Ball layout conforms to JEDEC MO-273B standard for DDR3 SDRAM.

Pin/Terminal	Circuit Role	Design Meaning
A0–A14	Address Inputs	Row/column bank address lines; A12–A14 select bank; A0–A11 address within 2K-byte page (16-bit wide).
BA0–BA2	Bank Address	Select one of eight internal banks; required for concurrent bank activation and interleaved access.
CK / CK#	Differential Clock	Edge-triggered command latch point; inputs sampled at CK rising / CK# falling crosspoint; defines all timing windows.
DQ0–DQ15	Data I/O	16-bit bidirectional data bus; SSTL_15 compatible; driven/received with DQS/DQS# strobes in source-synchronous mode.
DQS / DQS#	Differential Data Strobe	Source-synchronous strobe pair; edge-aligned with read data, center-aligned with write data; used for write leveling calibration.
DM0–DM1	Data Mask	Per-byte write mask for DQ[7:0] and DQ[15:8]; suppresses write data without requiring full bus turnaround.
RESET#	Asynchronous Reset	Active-low initialization signal; initiates power-up sequence and resets internal state machines independent of clock.
ODT	On-Die Termination Control	Dynamic enable/disable of internal termination resistors (RTT_NOM, RTT_WR) on DQ/DQS/DM lines to match line impedance.
WE#, RAS#, CAS#	Command Control	Standard DDR3 command pins; combined with address and BA to encode ACT, READ, WRITE, PRE, REF, MRS commands.
VDD / VDDQ	Power Supplies	Separate 1.5 V supplies for core logic (VDD) and I/O (VDDQ); require independent decoupling to minimize switching noise coupling.

Key Features

Feature	Design Value
Programmable CAS Write Latency (CWL)	Enables precise write timing closure across frequency bins (CWL = 5–9), reducing setup/hold violations in high-speed layouts.
ZQ Calibration	Uses external 240 Ω ± 1% resistor to calibrate output driver strength and ODT impedance, maintaining signal integrity over voltage/temperature drift.
Write Leveling	Allows controller to adjust DQS launch delay relative to CK to compensate for DQS–DQ skew, critical for reliable DDR3-1866 writes.
Multi-Purpose Register (MPR)	Provides predefined bit pattern for system-level timing calibration; eliminates need for dummy reads during initialization and training.
Partial Array Self-Refresh (PASR)	Reduces self-refresh current by refreshing only active banks, lowering IDD6 by up to 40% in memory-partitioned applications.
Dynamic ODT (Rtt_WR)	Activates ODT only during write operations on DQ/DQS/DM lines, improving signal integrity without increasing read-path termination loss.

Applications

Industrial PLC Memory Buffer	Embedded Network Router Cache
Use Scenario: Real-time I/O scanning and ladder logic execution in programmable logic controllers with deterministic response requirements. IC Role / Device Role / Timing Role: Primary working memory buffer interfacing directly to ARM Cortex-M7 or RISC-V SoC memory controller via 16-bit DDR3 bus. Use Value: DDR3-1866 bandwidth supports >1.5 GB/s sustained throughput for multi-threaded control task queues, while PASR extends thermal headroom during continuous operation.	Use Scenario: Packet buffering and forwarding table storage in Layer 3 enterprise routers handling 10 GbE line rates. IC Role / Device Role / Timing Role: High-bandwidth, low-latency packet buffer supporting bursty traffic patterns with minimal read/write turnaround penalty. Use Value: BL8 burst mode and programmable AL reduce command bus occupancy; dynamic ODT maintains clean write eye diagrams under heavy load.
Medical Imaging Front-End Controller	Automotive ADAS Preprocessing Module
Use Scenario: Real-time image frame buffering and pixel-level processing in ultrasound or digital X-ray acquisition systems. IC Role / Device Role / Timing Role: Frame store for 12-bit raw sensor data streams synchronized to FPGA-based image pipeline. Use Value: SSTL_15 interface ensures noise-immune signal integrity in mixed-signal medical enclosures; write leveling compensates for FPGA-to-SDRAM trace skew.	Use Scenario: Sensor fusion preprocessing in camera/radar domain controllers requiring deterministic memory access for time-critical vision algorithms. IC Role / Device Role / Timing Role: Low-latency scratchpad memory for CNN inference engines running on automotive-grade SoCs. Use Value: 0°C–95°C rating meets AEC-Q200 ambient requirements; ASR mode enables reliable operation during engine-bay thermal transients without host intervention.

Industrial PLC Memory Buffer

Embedded Network Router Cache

Use Scenario: Real-time I/O scanning and ladder logic execution in programmable logic controllers with deterministic response requirements.

IC Role / Device Role / Timing Role: Primary working memory buffer interfacing directly to ARM Cortex-M7 or RISC-V SoC memory controller via 16-bit DDR3 bus.

Use Value: DDR3-1866 bandwidth supports >1.5 GB/s sustained throughput for multi-threaded control task queues, while PASR extends thermal headroom during continuous operation.

Use Scenario: Packet buffering and forwarding table storage in Layer 3 enterprise routers handling 10 GbE line rates.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency packet buffer supporting bursty traffic patterns with minimal read/write turnaround penalty.

Use Value: BL8 burst mode and programmable AL reduce command bus occupancy; dynamic ODT maintains clean write eye diagrams under heavy load.

Medical Imaging Front-End Controller

Automotive ADAS Preprocessing Module

Use Scenario: Real-time image frame buffering and pixel-level processing in ultrasound or digital X-ray acquisition systems.

IC Role / Device Role / Timing Role: Frame store for 12-bit raw sensor data streams synchronized to FPGA-based image pipeline.

Use Value: SSTL_15 interface ensures noise-immune signal integrity in mixed-signal medical enclosures; write leveling compensates for FPGA-to-SDRAM trace skew.

Use Scenario: Sensor fusion preprocessing in camera/radar domain controllers requiring deterministic memory access for time-critical vision algorithms.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory for CNN inference engines running on automotive-grade SoCs.

Use Value: 0°C–95°C rating meets AEC-Q200 ambient requirements; ASR mode enables reliable operation during engine-bay thermal transients without host intervention.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT41K128M16HA-125:E	Same density (1G-bit), VFBGA-96, DDR3L-1600 (1.35 V), CL=11, tRC = 48.75 ns; lower voltage, slower max speed.	Targeted at power-constrained portable/embedded systems where 1.35 V supply is available and 1600 MT/s suffices.	Select when system uses DDR3L supply rails and does not require DDR3-1866 bandwidth; verify compatibility with existing 1.5 V bias networks.
K4B2G1646F-BYMA	Same density/package, DDR3-1866, CL=13, tAA = 13.75 ns, supports 105°C operation; higher CL, wider temp range.	Suitable for extended-temperature industrial or automotive under-hood applications requiring >95°C capability.	Choose for designs needing -40°C to 105°C operation; note CL=13 increases read latency versus W631GG6NB-11 TR's CL=13 max but CL=11 typical.

Compared with MT41K128M16HA-125:E and K4B2G1646F-BYMA, the W631GG6NB-11 TR delivers optimal balance of 1.5 V compatibility, DDR3-1866 performance, and commercial-temperature cost-efficiency-making it ideal for fixed-function industrial controllers where voltage headroom and thermal margin are prioritized over ultra-low power or extended temperature extremes.

Availability

W631GG6NB-11 TR is available at Aetrix Electronics and suitable for industrial PLCs, embedded network infrastructure, medical imaging front-ends, and automotive ADAS preprocessing modules requiring stable component supply, long-lifecycle support, and JEDEC-compliant DDR3 interoperability.

Supply support for W631GG6NB-11 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W631GG6NB series belongs to Winbond's DDR3 SDRAM product line, engineered for robustness in thermally demanding embedded systems with emphasis on JEDEC compliance, signal integrity features (ZQ, write leveling), and flexible power management (PASR, ASR).

FAQ

What is the maximum clock frequency supported by the W631GG6NB-11 TR?

The W631GG6NB-11 TR supports a maximum input clock frequency of 933 MHz, corresponding to DDR3-1866 data rates (1866 MT/s). This is achieved with tCK(AVG) ≤ 1.07 ns and validated under 0°C to 95°C case temperature with VDD/VDDQ = 1.5 V ± 75 mV. The device meets JEDEC specification 13-13-13 (tRCD/tRP/tAA = 13.91 ns min) at this speed.

Does the W631GG6NB-11 TR support write leveling, and how is it implemented?

Yes, the W631GG6NB-11 TR supports write leveling per JEDEC DDR3 specification. It uses the DQS strobe in conjunction with the MPR to allow the memory controller to detect DQS-to-CK phase offset and adjust DQS launch delay. The W631GG6NB-11 TR enters write leveling mode via MR3, outputs a fixed MPR pattern on DQ, and responds to DQS toggling to calibrate timing margins before normal operation.

What package type and ball count does the W631GG6NB-11 TR use?

The W631GG6NB-11 TR uses a VFBGA-96 package measuring 7.5 mm × 13 mm with 1.0 mm maximum height and 0.8 mm ball pitch. It conforms to JEDEC MO-273B and is RoHS-compliant with lead-free solder finish. The 96-ball layout includes dedicated DQ, DQS, address, command, and power/ground terminals optimized for DDR3 signal integrity and thermal performance.

Can the W631GG6NB-11 TR operate at temperatures above 95°C?

No-the W631GG6NB-11 TR is rated for 0°C ≤ TCASE ≤ 95°C only. Operation above 95°C is outside its qualified specification. For extended temperature support up to 105°C, Winbond offers the W631GG6NB11J variant (industrial-plus grade), which requires MR2 configuration for Auto Self-Refresh (ASR) and uses doubled refresh rate (tREFI = 3.9 µS) to maintain data retention.

How does on-die termination (ODT) function in the W631GG6NB-11 TR?

The W631GG6NB-11 TR implements programmable ODT with multiple resistance values (RTT_NOM, RTT_WR) configurable via MR1/MR2. ODT can be enabled synchronously (during reads/writes) or asynchronously (power-down entry/exit), and supports dynamic activation only during write cycles (Rtt_WR) to preserve read signal integrity. ZQ calibration ensures ODT impedance tracks process/voltage/temperature variations within ±10%.

W631GG6NB-11 TR Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 96-VFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - DDR3

Memory Size:: 1Gbit

Memory Organization:: 64M x 16

Memory Interface:: SSTL_15

Clock Frequency:: 933 MHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: 20 ns

Voltage - Supply:: 1.425V ~ 1.575V

Operating Temperature:: 0°C ~ 95°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 96-VFBGA (7.5x13)

W631GG6NB-11 TR FAQ

1.How can I place an order for W631GG6NB-11 TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W631GG6NB-11 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W631GG6NB-11 TR reliable?

The price and inventory of W631GG6NB-11 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GG6NB-11 TR is usually 5 days.

3.What payment methods are accepted for W631GG6NB-11 TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GG6NB-11 TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W631GG6NB-11 TR?

W631GG6NB-11 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W631GG6NB-11 TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W631GG6NB-11 TR?

For technical support, including W631GG6NB-11 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GG6NB-11 TR requirements.

6.How does Aetrix verify that W631GG6NB-11 TR is sourced from the original manufacturer or authorized distributors?

All W631GG6NB-11 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GG6NB-11 TR meets industry standards.

7.What is the process for return or replacement of W631GG6NB-11 TR?

All W631GG6NB-11 TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GG6NB-11 TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W631GG6NB-11 TR part is unused and in its original packaging.

Return procedure for W631GG6NB-11 TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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