Winbond Electronics Corporation W631GG6NB-12

Overview

W631GG6NB-12 from Winbond Electronics is a 1 Gbit DDR3 SDRAM organized as 8M × 8 banks × 16 bits, compliant with DDR3-1600 (11-11-11) timing, operating at 1.5 V supply, and rated for 0°C ≤ TCASE ≤ 95°C. It supports programmable CAS Latency (CL = 5–11), CAS Write Latency (CWL = 5–8), on-die termination (ODT), ZQ calibration, and asynchronous reset - deployed in embedded computing, industrial controllers, and network infrastructure memory subsystems.

For engineers reviewing the W631GG6NB-12 datasheet, W631GG6NB-12 pinout, W631GG6NB-12 application, or W631GG6NB-12 equivalent, key selection criteria include DDR3-1600 speed bin compliance, VFBGA-96 package compatibility, SSTL_15 interface signaling, dynamic ODT configuration, and industrial temperature support without extended range requirements.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access. It uses differential CK/CK# clocks for command/address latching at the crosspoint and source-synchronous DQS/DQS# strobes aligned edge-to-read-data and center-to-write-data.

Timing control relies on programmable mode registers (MR0–MR3) governing CAS Latency, additive latency (AL = 0, CL−1, CL−2), CWL, PASR, ASR, dynamic ODT (Rtt_WR), and write leveling. DLL alignment ensures precise DQ–DQS–CK timing, while ZQ calibration adjusts output driver and ODT impedance using an external 240 Ω resistor.

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and window-type construction optimized for thermal dissipation and board-level reliability in high-density layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with W631GG6NB-12, MT41K128M16JT-125K offers voltage flexibility and lower power but omits PASR/ASR, while IS43TR16128B-125KBL provides functional equivalence at lower cost but removes write-leveling capability - making W631GG6NB-12 optimal for thermally stable industrial systems requiring robust calibration and refresh control.

Availability

W631GG6NB-12 is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging systems requiring stable component supply, long-term lifecycle assurance, and JEDEC-compliant DDR3-1600 performance.

Supply support for W631GG6NB-12 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W631GG6NB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for reliability-critical applications requiring extended temperature operation, robust signal integrity features, and JEDEC-compliant timing behavior.

FAQ

What is the maximum data rate supported by the W631GG6NB-12?

The W631GG6NB-12 is rated for DDR3-1600 operation, delivering 1600 megatransfers per second (MT/s) with an 800 MHz differential clock frequency. This corresponds to a minimum tCK of 1.25 ns and validated timing parameters including tRCD/tRP = 11 cycles (13.75 ns). The device does not support higher bins such as DDR3-1866 or DDR3-2133.

Does the W631GG6NB-12 support extended temperature operation beyond 95°C?

No, the W631GG6NB-12 is specified for 0°C ≤ TCASE ≤ 95°C only. Extended temperature variants are designated with suffixes "12I" (−40°C to 95°C) and "12J" (−40°C to 105°C). The -12 grade lacks Auto Self-Refresh (ASR) and extended tREFI support required for operation above 95°C.

How is on-die termination configured on the W631GG6NB-12?

On-die termination (ODT) on the W631GG6NB-12 is controlled via Mode Registers MR1 and MR2. Static ODT values (RTT_NOM) are set in MR1, while dynamic ODT (Rtt_WR) during writes is enabled in MR2. Supported impedances include 120 Ω, 60 Ω, and 40 Ω, selected using MR1 A9/A6/A2 bits per JEDEC DDR3 specification.

What package type and ball count does the W631GG6NB-12 use?

The W631GG6NB-12 uses a 96-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 7.5 mm × 13 mm with 0.8 mm ball pitch. It follows the "window BGA" mechanical layout and is RoHS-compliant with lead-free solder finish - identical to industry-standard DDR3 SDRAM footprints.

Can the W631GG6NB-12 be used with DDR3L controllers?

No - the W631GG6NB-12 requires VDD/VDDQ = 1.5 V ± 0.075 V and is not compatible with DDR3L (1.35 V) controllers. Its SSTL_15 I/O standard mandates 1.5 V reference, and operation below 1.425 V violates DC specifications. Use DDR3L alternatives like MT41K128M16JT-125K only if controller supports dual-voltage mode.