Winbond Electronics Corporation W631GG6NB12I TR

Overview

W631GG6NB12I TR from Winbond is a 1Gbit DDR3 SDRAM organized as 8M × 8 banks × 16-bit, supporting DDR3-1600 (11-11-11) operation at up to 800 MHz clock frequency with CAS Latency 5–11 and programmable CAS Write Latency 5–8. It features on-die termination (ODT), ZQ calibration, asynchronous RESET#, and operates across -40°C to +95°C industrial temperature range. This device serves as main memory in embedded computing, networking equipment, and industrial controllers requiring high-bandwidth, low-latency DRAM with JEDEC-compliant timing.

For engineers reviewing the W631GG6NB12I TR datasheet, W631GG6NB12I TR pinout, W631GG6NB12I TR application, or W631GG6NB12I TR equivalent, key selection criteria include DDR3-1600 speed bin compliance, VFBGA-96 package compatibility, industrial temperature support, ODT configuration flexibility, and system-level timing calibration via write leveling and MPR read pattern.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks for concurrent access and supports both burst length 8 (BL8) and burst chop 4 (BC4) modes, configurable via mode register or on-the-fly. It uses SSTL_15 I/O interface with differential CK/CK# and DQS/DQS# signaling, where data is edge-aligned on reads and center-aligned on writes.

The device integrates DLL for DQ-DQS-clock alignment, programmable additive latency (AL = 0, CL−1, CL−2), posted CAS, auto-precharge, and multiple power-down modes including precharged and active power down. It supports ZQ calibration using external 240 Ω resistor and offers dynamic ODT (Rtt_WR) with selectable termination impedances during write operations.

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and window-type construction optimized for thermal dissipation and signal routing in dense PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K128M16JT-125K and IS43TR16128B-125KBL, W631GG6NB12I TR provides unique support for write leveling, MPR-based calibration, and partial array self-refresh - making it optimal for thermally constrained, FPGA-hosted, or battery-backed industrial designs demanding robust timing margin validation and power optimization.

Availability

W631GG6NB12I TR is available at Aetrix Electronics and suitable for industrial PLCs, network switches, medical imaging controllers, and video surveillance DVRs requiring stable component supply with guaranteed long-term availability and full JEDEC compliance.

Supply support for W631GG6NB12I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W631GG6NB series is part of Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for embedded systems requiring extended temperature operation, robust signal integrity features, and JEDEC-compliant reliability in harsh environments.

FAQ

What is the maximum supported clock frequency for W631GG6NB12I TR?

The W631GG6NB12I TR is rated for DDR3-1600 operation, meaning it supports a maximum data transfer rate of 1600 MT/s with an effective clock frequency of 800 MHz. Its tCK(AVG) specification ranges from 1.875 ns to <2.5 ns depending on CAS Latency and CAS Write Latency settings, and it meets all JEDEC AC timing requirements for the DDR3-1600 (11-11-11) speed bin under industrial temperature conditions.

Does W631GG6NB12I TR support write leveling and how is it implemented?

Yes, W631GG6NB12I TR fully supports write leveling as defined in JEDEC DDR3 standards. It uses the DQS strobe to calibrate per-lane skew between controller and DRAM during initialization. The DRAM responds with a fixed pattern via MPR, allowing the memory controller to adjust delay taps on each DQS line. This function is enabled via MR2 bit A4 and requires proper ZQ calibration prior to execution.

What package type and ball count does W631GG6NB12I TR use?

W631GG6NB12I TR uses a VFBGA-96 (Very Thin Fine-Pitch Ball Grid Array) package with 96 solder balls arranged in a 7.5 mm × 13 mm footprint and 0.8 mm pitch. It is a window-type BGA with exposed die pad for enhanced thermal performance and RoHS-compliant lead-free finish - distinct from standard FBGA packages used by competing DDR3 devices.

Can W631GG6NB12I TR operate in partial array self-refresh (PASR) mode?

Yes, W631GG6NB12I TR supports Partial Array Self-Refresh (PASR) as defined in MR2. By setting MR2 bits A2–A0 to select ¼, ½, or ¾ of total banks for refresh, PASR reduces self-refresh current consumption proportionally. This feature is especially valuable in battery-powered or thermally constrained industrial devices where minimizing IDD6 is critical without sacrificing data retention.

What is the role of the ZQ pin on W631GG6NB12I TR and what external component is required?

The ZQ pin on W631GG6NB12I TR connects to an external 240 Ω ±1% precision resistor tied to VSSQ (ground). During ZQ calibration commands, the DRAM measures this reference to trim its output driver impedance and on-die termination (ODT) values, ensuring consistent signal integrity across voltage and temperature variations. Failure to populate the ZQ resistor results in undefined ODT and drive strength behavior.