Winbond Electronics Corporation W631GG6NB-15 TR

Overview

W631GG6NB-15 TR from Winbond is a 1Gbit (8M × 8 banks × 16-bit) DDR3 SDRAM compliant with JEDEC DDR3-1333 (9-9-9) timing, operating at 667 MHz clock frequency with 1.5V VDD/VDDQ supply, and packaged in a RoHS-compliant 96-ball VFBGA (7.5 × 13 mm, 1.0 mm height) for use in embedded computing, industrial control, and networking memory subsystems.

For engineers reviewing the W631GG6NB-15 TR datasheet, W631GG6NB-15 TR pinout, W631GG6NB-15 TR application, or W631GG6NB-15 TR equivalent, key selection considerations include its DDR3-1333 speed bin, -40°C to 95°C industrial temperature range (15I variant), support for programmable CAS Write Latency (CWL = 5–7), ZQ calibration, dynamic on-die termination (ODT), and asynchronous RESET# for robust power-up initialization.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, differential CK/CK# and DQS/DQS# signaling per JEDEC SSTL_15 interface, and DLL-based alignment of data strobes to clock edges. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, and burst lengths of 8 (BL8) or 4 (BC4) selectable on-the-fly.

Functional operation includes ZQ calibration using an external 240 Ω reference resistor, multi-purpose register (MPR) readout for system-level timing calibration, write leveling for DQ-DQS skew compensation, and three refresh modes: standard, self-refresh, and auto self-refresh (ASR) with extended temperature support up to 105°C in J-grade variants.

Key Specifications

Pinout & Package

W631GG6NB-15 TR uses a 96-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.65 mm ball pitch, 7.5 mm × 13 mm footprint, and 1.0 mm maximum height. Ball assignment follows JEDEC-standard DDR3 SDRAM layout with dedicated VDD, VDDQ, VSS, VSSQ, address/command, data, strobe, and control balls.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with W631GG6NB-15 TR, the Micron MT41K128M16JT-125:K offers lower voltage operation but requires redesign of power delivery and timing margins, while the ISSI IS43TR16128B-15KBL provides direct electrical and timing equivalence with minimal firmware adaptation for mode register programming.

Availability

W631GG6NB-15 TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical electronics applications requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for W631GG6NB-15 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W631GG6NB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for applications demanding extended temperature operation, robust power-up initialization, and JEDEC-compliant signal integrity in space-constrained embedded systems.

FAQ

What is the maximum clock frequency supported by the W631GG6NB-15 TR?

The W631GG6NB-15 TR supports a maximum clock frequency of 667 MHz, corresponding to a data rate of 1333 MT/s (DDR3-1333). This is defined by its speed grade suffix "-15", which specifies CL-tRCD-tRP = 9-9-9 timing at 667 MHz. The device does not support higher-frequency operation such as DDR3-1600 or DDR3-1866 without violating JEDEC timing specifications.

Does the W631GG6NB-15 TR support extended temperature operation?

Yes, the W631GG6NB-15 TR is rated for 0°C ≤ T_CASE ≤ 95°C. Its industrial-grade variant W631GG6NB15I extends operation to -40°C ≤ T_CASE ≤ 95°C and supports Auto Self-Refresh (ASR) for reliable retention at elevated temperatures. The "-15" suffix itself denotes the standard commercial/industrial temperature grade, not the extended 105°C "J" variant.

How is on-die termination configured on the W631GG6NB-15 TR?

On-die termination (ODT) on the W631GG6NB-15 TR is configured via Mode Registers MR1 and MR2. MR1 sets static termination values (RTT_NOM), while MR2 controls dynamic ODT (RTT_WR) during write operations. Termination resistances include 75 Ω, 150 Ω, and 50 Ω options, selected using ODT pin assertion and mode register writes - all fully compatible with JEDEC DDR3 standards.

What is the purpose of the ZQ pin on the W631GG6NB-15 TR?

The ZQ pin on the W631GG6NB-15 TR connects to an external 240 Ω ±1% precision resistor to ground and enables factory and runtime calibration of output driver strength and on-die termination impedance. This ensures stable 34–40 Ω impedance across voltage and temperature variations, directly supporting signal integrity requirements for DDR3-1333 operation at 667 MHz.

Can the W631GG6NB-15 TR be used in place of a DDR3L part?

No, the W631GG6NB-15 TR is a standard DDR3 part requiring 1.5 V ±0.075 V for both VDD and VDDQ, and is not backward compatible with DDR3L (1.35 V) systems. Substituting it into a DDR3L design would exceed absolute maximum ratings for VDDQ and risk permanent damage. Always verify supply voltage compliance before replacement - W631GG6NB-15 TR must be used only in 1.5 V DDR3-compatible platforms.