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Winbond Electronics Corporation W631GG8KB-11
- Part No.:
- W631GG8KB-11
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-TFBGA
- Datasheet:
-
W631GG8KB-11.pdf
- Description:
- IC DRAM 1GBIT PAR 78WBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,235
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Product details
Overview
W631GG8KB-11 from Winbond Electronics is a 1 Gb (128 MB) DDR3 SDRAM organized as 16M × 8 banks × 8 bits, supporting DDR3-1866 speed grade (13-13-13 timing), 1.5 V core/interface supply, and industrial-grade temperature operation (0°C to 95°C). It delivers 1866 Mb/sec/pin data rates with programmable CAS Latency (CL = 6, 8, 10, 13), on-die termination (ODT), and ZQ calibration for high-speed memory subsystems in networking and embedded computing.
For engineers reviewing the W631GG8KB-11 datasheet, W631GG8KB-11 pinout, W631GG8KB-11 application, or W631GG8KB-11 equivalent, key selection criteria include its DDR3-1866 timing compliance, 78-ball WBGA package, SSTL_15 interface compatibility, asynchronous RESET# support, and dynamic ODT configuration for signal integrity optimization in multi-rank DIMM designs.
Technical Context
This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-aligned DQ/DQS timing relative to CK/CK#, and source-synchronous differential strobe (DQS/DQS#) I/O. Its command interface uses positive-edge sampling of CK with cross-point latching of address/control signals.
The device supports full JEDEC DDR3 features including posted CAS with additive latency (AL = 0, CL−1, CL−2), programmable CWL (5–9), write leveling, Multi-Purpose Register (MPR)-based calibration, and dual-mode ODT (synchronous/dynamic) with RTT_NOM/RTT_WR settings controlled via MR1/MR2.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gb (128 MB), organized as 16M words × 8 banks × 8 bits - defines usable capacity per chip in rank-level memory expansion. |
| Data Rate | DDR3-1866 (933 MHz clock, 1866 MT/s) - enables high-bandwidth interfaces in routers, baseband units, and SoC memory controllers. |
| CAS Latency | CL = 6, 8, 10, 13 - determines minimum read access latency; CL=13 required for full DDR3-1866 timing compliance (tAA = 13.91 ns). |
| Supply Voltage | VDD/VDDQ = 1.5 V ± 0.075 V - mandates compatible 1.5 V power delivery and level-shifting for host controller interfacing. |
| Operating Temp | 0°C ≤ TCASE ≤ 95°C - supports extended-temperature applications without derating when using ASR or manual self-refresh. |
| Package | 78-ball WBGA (8 mm × 10.5 mm, 0.8 mm pitch) - surface-mount footprint requiring controlled-impedance PCB layout for DQ/DQS routing. |
| Interface Standard | SSTL_15 - defines voltage thresholds and termination requirements for reliable signal integrity at 1.5 V signaling. |
Pinout & Package
W631GG8KB-11 is packaged in a 78-ball Wafer-Level Ball Grid Array (WBGA), 8 mm × 10.5 mm body size, RoHS-compliant and lead-free. Ball pitch is 0.8 mm; mounting requires reflow profile compliant with JEDEC J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential clock input | Latches all address/control inputs at crossing point; defines system timing reference for all DDR3 operations. |
| DQS / DQS# | Differential data strobe | Source-synchronous strobe aligned to center of write data and edge-aligned to read data; critical for timing closure. |
| RESET# | Asynchronous reset input | Initiates power-up initialization sequence and resets internal state; must be held low ≥ 200 µs after stable VDD/VDDQ. |
| ODT | On-die termination control | Enables/disables internal termination resistors on DQ/DQS/DM lines; configured via MR1 for impedance matching. |
| ZQ | ZQ calibration reference | Connects to external 240 Ω ±1% resistor to ground; calibrates output driver strength and ODT values during ZQCL command. |
| CS# | Chip select | Active-low enable for command decoding; used for rank selection in multi-chip modules or DIMMs. |
| CKE | Clock enable | Controls entry/exit from power-down and self-refresh modes; must remain HIGH during active read/write bursts. |
Key Features
| Feature | Design Value |
|---|---|
| Dynamic ODT (Rtt_WR) | Enables on-the-fly ODT activation during WRITE commands only, reducing stub reflections and improving write eye margin without affecting read paths. |
| Write Leveling | Calibrates DQS-to-CK skew per byte lane using MPR read pattern, enabling precise timing alignment for multi-DIMM systems with trace length mismatch. |
| Programmable CWL | Supports CWL = 5–9, allowing optimal write latency (WL = AL + CWL) tuning across DDR3-1333 to DDR3-1866 frequencies. |
| Partial Array Self Refresh (PASR) | Reduces self-refresh current up to 50% by refreshing only active banks, extending battery life in portable embedded systems with intermittent memory access. |
| Multi-Purpose Register (MPR) | Provides predefined calibration bit pattern (0x00000000) for system-level timing validation without disturbing normal memory contents. |
Applications
| Networking Equipment | Industrial HMI |
|---|---|
Use Scenario: High-throughput packet buffering in Layer 3 switches and enterprise routers handling 10 GbE line cards. IC Role / Device Role / Timing Role: Primary DDR3 memory bank providing low-latency, burst-access storage for forwarding tables and packet queues. Use Value: DDR3-1866 bandwidth (14.9 GB/s per 64-bit channel) sustains wire-speed processing under full line-rate traffic loads. | Use Scenario: Real-time display rendering and local data logging in factory-floor HMIs operating continuously at 95°C ambient. IC Role / Device Role / Timing Role: Main system memory for ARM-based HMI SoC, supporting GUI frame buffers and nonvolatile log storage. Use Value: Extended temperature rating (0°C–95°C) with ASR mode ensures uninterrupted operation without thermal throttling or refresh loss. |
| Baseband Processing | Edge AI Gateways |
Use Scenario: Shared memory pool for multi-core DSP clusters in LTE/5G small cell baseband units. IC Role / Device Role / Timing Role: Coherent DDR3 memory resource accessed concurrently by multiple DSP cores via memory controller arbitration. Use Value: Eight-bank architecture enables bank interleaving (IDD7 = 390 mA), sustaining >90% bus utilization during sustained burst transfers. | Use Scenario: Inference acceleration buffer in fanless edge gateways running TensorFlow Lite models with local sensor fusion. IC Role / Device Role / Timing Role: Off-chip working memory for neural network weight caching and intermediate tensor storage. Use Value: Dynamic ODT and write leveling ensure signal integrity across compact 4-layer PCBs with tight routing constraints and no connector stubs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K128M8RH-125:E (Micron) | Same density (1 Gb), 78-ball FBGA, DDR3L-1600 (1.35 V), CL=11 @ 800 MHz; lacks PASR and TDQS support. | Lower voltage operation reduces power but requires separate 1.35 V rail; not suitable for legacy 1.5 V-only systems. | Select when system power budget is constrained and controller supports DDR3L; verify RESET# timing compatibility. |
| IS43TR16128B-125KBL (ISSI) | 1 Gb, 96-ball BGA, DDR3-1600, CL=11, supports ZQ and ODT; different ballout prevents direct PCB replacement. | Requires board redesign due to 96-ball layout and larger 11 mm × 13 mm footprint; higher pin count enables x16 data width variants. | Choose for new designs needing x16 interface flexibility or longer product lifecycle; not drop-in for W631GG8KB-11's 78-ball layout. |
Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, W631GG8KB-11 offers native DDR3-1866 performance at 1.5 V with PASR and TDQS capability-critical for thermally constrained, high-bandwidth embedded systems where voltage rails and board space are fixed.
Availability
W631GG8KB-11 is available at Aetrix Electronics and suitable for networking equipment, industrial HMIs, baseband processing units, and edge AI gateways requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W631GG8KB-11 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W631GG8KB-11 belongs to Winbond's high-reliability DDR3 SDRAM product line, engineered for stable operation in thermally demanding embedded applications with rigorous signal integrity and long-term availability requirements.
FAQ
What is the maximum data rate supported by the W631GG8KB-11?
The W631GG8KB-11 supports DDR3-1866 operation, delivering 1866 megatransfers per second (MT/s) with a 933 MHz differential clock frequency. This is validated under JEDEC-compliant conditions with tCK = 1.07 ns (CL=13, CWL=9), and requires strict adherence to AC timing parameters including tAA, tRCD, and tRP minima of 13.91 ns each.
Does the W631GG8KB-11 support industrial temperature range?
Yes, the W631GG8KB-11 is rated for 0°C ≤ TCASE ≤ 95°C operation. At temperatures above 85°C, it requires either Auto Self-Refresh (ASR) enabled via MR2 or manual self-refresh mode to maintain refresh integrity at doubled frequency (tREFI = 3.9 µS), ensuring data retention without external intervention.
How is on-die termination configured on the W631GG8KB-11?
On-die termination (ODT) on the W631GG8KB-11 is controlled via the ODT pin and programmed through Mode Register MR1 (bits A2–A0) and MR2 (bit A9). It supports RTT_NOM values of 75 Ω, 150 Ω, or 50 Ω, and dynamic Rtt_WR values of 75 Ω or 150 Ω during writes, calibrated using the external ZQ resistor.
What package type does the W631GG8KB-11 use?
The W631GG8KB-11 uses a 78-ball Wafer-Level Ball Grid Array (WBGA) package measuring 8 mm × 10.5 mm with 0.8 mm ball pitch. It is RoHS-compliant and lead-free, designed for automated SMT assembly and optimized for high-density DDR3 memory module layouts.
Can the W631GG8KB-11 operate at lower CAS latencies than CL=13?
Yes, the W631GG8KB-11 supports CL=6, 8, 10, and 13. However, CL=13 is mandatory for full DDR3-1866 compliance (13-13-13 timing). Lower CL settings (e.g., CL=10) are permitted only at reduced frequencies (e.g., DDR3-1600) and require corresponding tAA/tRCD/tRP adjustments per JEDEC specification and SPD programming.
W631GG8KB-11 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.425V ~ 1.575V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-WBGA (10.5x8)
W631GG8KB-11 FAQ
1.How can I place an order for W631GG8KB-11 through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GG8KB-11 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GG8KB-11 reliable?
The price and inventory of W631GG8KB-11 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GG8KB-11 is usually 5 days.
3.What payment methods are accepted for W631GG8KB-11?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GG8KB-11 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GG8KB-11?
W631GG8KB-11 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GG8KB-11 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GG8KB-11?
For technical support, including W631GG8KB-11 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GG8KB-11 requirements.
6.How does Aetrix verify that W631GG8KB-11 is sourced from the original manufacturer or authorized distributors?
All W631GG8KB-11 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GG8KB-11 meets industry standards.
7.What is the process for return or replacement of W631GG8KB-11?
All W631GG8KB-11 units undergo pre-shipment inspection (PSI). If there is an issue with W631GG8KB-11, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GG8KB-11 part is unused and in its original packaging.
Return procedure for W631GG8KB-11:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GG8KB-11 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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