Winbond Electronics Corporation W631GG8KB-12

Overview

W631GG8KB-12 from Winbond is a 1 Gb (128 MB) DDR3 SDRAM organized as 16M × 8 banks × 8 bits, operating at DDR3-1600 speed (800 MHz clock, 1600 MT/s), with CL=11, tRCD=tRP=13.75 ns, and 1.5 V VDD/VDDQ supply. It implements on-die termination (ODT), ZQ calibration, programmable CWL, and asynchronous RESET# for use in memory subsystems of embedded controllers, industrial HMIs, and networking edge devices.

For engineers reviewing the W631GG8KB-12 datasheet, W631GG8KB-12 pinout, W631GG8KB-12 application, or W631GG8KB-12 equivalent, key selection considerations include its -12 speed grade compliance with JEDEC DDR3-1600 (11-11-11), industrial temperature support up to 95°C case temperature, WBGA-78 package with SSTL_15 interface, and dynamic ODT timing behavior during write operations.

Technical Context

This DDR3 SDRAM uses an 8-bit prefetch architecture with eight internal banks enabling concurrent row activation. Its DLL aligns DQ and DQS transitions to CK/CK#, supporting source-synchronous read/write timing with bi-directional differential DQS/DQS# strobes edge-aligned on reads and center-aligned on writes.

It supports programmable CAS Latency (CL = 6, 7, 8, 9, 10, 11), additive latency (AL = 0, CL−1, CL−2), and CAS Write Latency (CWL = 5–8). Mode registers MR0–MR3 configure PASR, ASR, dynamic ODT (Rtt_WR), write leveling, and MPR-based timing calibration-enabling system-level signal integrity tuning without external components.

Key Specifications

Pinout & Package

W631GG8KB-12 is housed in a lead-free, RoHS-compliant WBGA-78 package (8 mm × 10.5 mm, 0.8 mm ball pitch) with 78 solder balls arranged in an 8×10.5 mm² grid. Ball assignment follows JEDEC-standard DDR3 SDRAM layout with dedicated VDD, VDDQ, VSS, VSSQ, VREFCA, VREFDQ, ZQ, and NC locations.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with W631GG8KB-12, the Micron alternative offers DDR3L flexibility at the cost of layout redesign, while the ISSI part matches the WBGA-78 footprint but omits PASR and 95°C validation - making W631GG8KB-12 uniquely suited for thermally constrained, power-aware industrial systems requiring guaranteed extended temperature operation.

Availability

W631GG8KB-12 is available at Aetrix Electronics and suitable for industrial HMI, networking edge routers, and embedded vision systems requiring stable component supply, long-term lifecycle assurance, and extended temperature qualification.

Supply support for W631GG8KB-12 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W631GG8KB-12 belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for applications demanding extended temperature operation, robust power-down modes, and system-level timing calibration features like write leveling and MPR.

FAQ

What is the maximum operating frequency and corresponding CAS latency for W631GG8KB-12?

W631GG8KB-12 is rated for DDR3-1600 operation at 800 MHz clock frequency with a minimum CAS latency of CL=11. Its tRCD and tRP are specified at 13.75 ns, and it supports optional down-binning to CL=7 or CL=9 under specific SPD programming and timing conditions per JEDEC specification. The device achieves 1600 MT/s data transfer rate with double-data-rate architecture.

Does W631GG8KB-12 support industrial temperature range, and what is the upper limit?

Yes, W631GG8KB-12 is qualified for industrial operation with a case temperature range of 0°C ≤ TCASE ≤ 95°C. This extended upper limit is validated with doubled auto-refresh frequency (tREFI = 3.9 µS) and requires either Manual Self-Refresh mode (MR2 A6=0, A7=1) or Auto Self-Refresh (ASR) enabled (MR2 A6=1). It does not support −40°C operation - that capability is reserved for the W631GG8KB12I variant.

What package type and ball count does W631GG8KB-12 use?

W631GG8KB-12 uses a lead-free, RoHS-compliant WBGA-78 package measuring 8 mm × 10.5 mm with 0.8 mm ball pitch. It contains 78 solder balls arranged in a JEDEC-standard DDR3 layout, including dedicated VDD, VDDQ, VSS, VSSQ, VREFCA, VREFDQ, ZQ, and NC positions - distinct from 96-ball FBGA packages used by some competing DDR3 devices.

How does the ZQ calibration function work on W631GG8KB-12?

W631GG8KB-12 performs ZQ calibration by referencing an external 240 Ω ±1 % resistor connected between the ZQ pin and ground. This calibration adjusts both output driver impedance and on-die termination (ODT) values to compensate for process, voltage, and temperature variations. Calibration is initiated via ZQCL command and must be repeated after power-up, reset, or significant voltage/temperature shifts to maintain signal integrity.

Can W631GG8KB-12 operate with DDR3L voltage levels?

No, W631GG8KB-12 is specified exclusively for 1.5 V ± 0.075 V operation on both VDD and VDDQ rails. It is not compatible with DDR3L (1.35 V) or low-voltage DDR3 variants. Attempting to operate at 1.35 V will result in unreliable initialization, failed mode register settings, and intermittent data corruption due to insufficient noise margin and driver strength.