Winbond Electronics Corporation W631GG8KB-15

Overview

W631GG8KB-15 from Winbond is a 1G-bit DDR3 SDRAM organized as 16M × 8 banks × 8 bits, supporting DDR3-1333 (9-9-9) speed grade with 667 MHz clock frequency, 1.5 V core/interface supply, and SSTL_15 I/O standard. It delivers 10.66 GB/s peak bandwidth across 8-bit data bus and is used in embedded computing, industrial controllers, and network edge devices requiring JEDEC-compliant low-latency memory.

For engineers reviewing the W631GG8KB-15 datasheet, W631GG8KB-15 pinout, W631GG8KB-15 application, or W631GG8KB-15 equivalent, this page provides verified DDR3 timing parameters, ball mapping, ODT configuration options, ZQ calibration support, and industrial-temperature-compatible alternatives for stable BOM design.

Technical Context

This DDR3 SDRAM implements eight internal banks, 8-bit prefetch architecture, and source-synchronous differential DQS/DQS# strobes aligned to read data edges and write data centers. It supports programmable CAS Latency (CL = 6, 7, 8, 9, 10), CAS Write Latency (CWL = 5–7), additive latency (AL = 0, CL−1, CL−2), and auto-precharge for burst operations.

The device features asynchronous RESET# for power-up initialization, on-die termination (ODT) with synchronous/dynamic modes, ZQ calibration using external 240 Ω resistor, and Multi-Purpose Register (MPR) for system-level timing calibration via predefined read patterns. All commands are sampled on CK rising / CK# falling crossing points.

Key Specifications

Pinout & Package

W631GG8KB-15 uses a 78-ball WBGA package (8 mm × 10.5 mm) with 0.8 mm ball pitch, designed for high-density PCB layouts and thermal reliability in industrial environments.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with W631GG8KB-15, MT41K128M8RH-125:E offers lower active power but mandates voltage redesign, while IS43TR16128B-15KBL doubles capacity at the cost of bus width and physical incompatibility-neither is pin- or voltage-compatible, making W631GG8KB-15 the sole direct-fit solution for existing x8 DDR3-1333 layouts.

Availability

W631GG8KB-15 is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical electronics requiring stable component supply, long-term lifecycle assurance, and JEDEC-compliant DDR3-1333 performance.

Supply support for W631GG8KB-15 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial and automotive markets.

The W631GG8KB series belongs to Winbond's industrial DDR3 SDRAM product line, engineered for extended temperature operation, robust signal integrity, and compatibility with legacy DDR3 controllers in cost-sensitive embedded systems.

FAQ

What is the maximum operating frequency and corresponding timing specification for W631GG8KB-15?

W631GG8KB-15 is rated for DDR3-1333 operation at 667 MHz clock frequency, with minimum timing parameters tRCD = tRP = tAA = 9 ns (9-9-9). Its maximum fCK is 667 MHz under standard 0–95°C case temperature conditions, and it supports optional down-binning to DDR3-1066 (7-7-7) if SPD settings are updated accordingly.

Does W631GG8KB-15 support industrial temperature range, and how is it implemented?

W631GG8KB-15 is specified for 0°C ≤ TCASE ≤ 95°C. For operation above 85°C, it requires doubling the refresh rate (tREFI = 3.9 µs) and enabling Auto Self-Refresh (ASR) via MR2 bit A6 = 1b. This is fully supported in the W631GG8KB-15 datasheet and validated across the entire speed bin.

How does ZQ calibration function on W631GG8KB-15, and what external component is required?

W631GG8KB-15 performs ZQ calibration using an external 240 Ω ±1% resistor connected between the ZQ pin and ground. This calibrates both output driver strength and on-die termination (ODT) impedances to maintain ±10% accuracy across voltage and temperature variations, as defined in JEDEC DDR3 standard.

Can W631GG8KB-15 operate with CAS Latency 7 or 9, and are those settings validated?

Yes, W631GG8KB-15 supports CL = 7 and CL = 9 as optional settings per its datasheet. These require tAA/tRCD/tRP minimums of 13.125 ns and corresponding SPD byte programming (Bytes 16, 18, 20). The -15 speed grade explicitly lists CL = 6, 7, 8, 9, 10 in Sup_CL, confirming full validation.

What is the role of the MPR (Multi-Purpose Register) in W631GG8KB-15, and how is it accessed?

The MPR in W631GG8KB-15 outputs a fixed 32-bit pattern (0x00000000) during reads to support system-level timing calibration. It is enabled by setting MR3 A0 = 1 and accessed via standard READ commands with bank address BA0–BA2 = 000, allowing non-destructive calibration without affecting normal memory operation.