Winbond Electronics Corporation W631GG8KB15I
- Part No.:
- W631GG8KB15I
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-TFBGA
- Datasheet:
-
W631GG8KB15I.pdf
- Description:
- IC DRAM 1GBIT PAR 78WBGA
- Quantity:
- Payment:

- Shipping:

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Product details
Overview
W631GG8KB15I from Winbond is a 1G-bit DDR3 SDRAM organized as 16M × 8 banks × 8 bits, supporting DDR3-1333 (9-9-9) speed grade with 667 MHz clock frequency, 1.5 V supply (VDD/VDDQ), and industrial temperature range (–40°C to +95°C). It implements on-die termination (ODT), ZQ calibration, programmable CAS Write Latency (CWL = 5–7), and asynchronous RESET# for reliable memory subsystems in embedded controllers and networking equipment.
For engineers reviewing the W631GG8KB15I datasheet, W631GG8KB15I pinout, W631GG8KB15I application, or W631GG8KB15I equivalent, key selection considerations include its industrial-grade thermal rating, 78-ball WBGA package, SSTL_15 interface compatibility, and support for auto-precharge, partial array self-refresh (PASR), and write leveling - all critical for stable DDR3 memory channel design.
Technical Context
This DDR3 SDRAM uses an 8-bit prefetch architecture with eight internal banks enabling concurrent access, and employs differential CK/CK# and DQS/DQS# signaling synchronized at the clock crossing point. Its DLL aligns DQ and DQS transitions to CK, ensuring timing closure across process/voltage/temperature variations.
It supports programmable mode registers (MR0–MR3) for CAS Latency (CL = 6, 8, 9, 10), CWL, additive latency (AL = 0, CL−1, CL−2), ODT RTT values (60 Ω, 120 Ω, 40 Ω), and dynamic ODT (Rtt_WR) during writes. The device also implements ZQ calibration using an external 240 Ω resistor and supports multi-purpose register (MPR) readout for system-level timing calibration.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 G-bit (16M words × 8 banks × 8 bits), delivering 128 MB of byte-accessible storage |
| Data Rate / Speed Grade | DDR3-1333 (667 MHz fCK, 1333 MT/s per pin), with tAA/tRCD/tRP = 9-9-9 timing |
| Supply Voltage | VDD = VDDQ = 1.5 V ± 0.075 V - requires tight regulation for signal integrity and JEDEC compliance |
| Operating Temperature | –40°C ≤ TCASE ≤ 95°C - qualified for extended industrial environments with ASR/PASR support |
| CAS Latency (CL) | Programmable CL = 6, 8, 9, 10 - determines minimum read latency (RL = AL + CL) and impacts memory controller timing margins |
| CAS Write Latency (CWL) | Programmable CWL = 5–7 - sets write latency (WL = AL + CWL) and synchronizes data capture relative to DQS |
| On-Die Termination | Configurable ODT (RTT_NOM = 60/120/40 Ω) and dynamic ODT (Rtt_WR) - eliminates external termination resistors and improves write signal integrity |
| ZQ Calibration | Uses external 240 Ω reference resistor to calibrate output driver impedance and ODT resistance - ensures consistent drive strength across voltage/temperature |
Pinout & Package
Packaged in a lead-free, RoHS-compliant 78-ball WBGA (8 mm × 10.5 mm, 0.8 mm pitch), with ball grid layout optimized for DDR3 routing density and signal integrity.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| CK / CK# | Differential clock input | Samples all command/address inputs at crossing point; defines system timing reference for all operations |
| CKE | Clock enable | Asynchronous control for power-down entry/exit and Self-Refresh activation; must remain HIGH during active accesses |
| CS# | Chip select | Active-low command gate - enables decoding of commands only when asserted, supporting multi-rank systems |
| RAS#, CAS#, WE# | Command inputs | Define row/column activation, precharge, read/write, and refresh operations via standard DDR3 command encoding |
| A0–A13, BA0–BA2 | Address/bank inputs | Select row, column, and bank; A10/AP supports auto-precharge, A12/BC# enables burst chop |
| DQ0–DQ7 | Bidirectional data I/O | 8-bit data bus operating at SSTL_15 levels; supports BL8 and BC4 burst modes with DM masking |
| DQS / DQS# | Differential strobe | Source-synchronous strobe - edge-aligned with read data, center-aligned with write data for precise capture |
| DM / TDQS | Data mask / TDQS enable | DM masks write data bytes; TDQS enables termination for DQS/DQS# when MR1[A11] = 1 |
| RESET# | Asynchronous reset | Initiates power-up initialization sequence and resets internal state without requiring stable clocks |
| ODT | On-die termination control | Registered input enabling/disabling internal termination on DQ/DQS/DM pins per JEDEC ODT protocol |
| VREFCA / VREFDQ | Reference voltage inputs | Provide mid-supply reference for command/address and data input receivers - must be stable before CKE assertion |
| ZQ | ZQ calibration reference | Connects to external 240 Ω resistor to ground - used by internal circuitry to calibrate driver/ODT impedance |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Write Latency (CWL) | Supports CWL = 5–7 per frequency bin - enables precise write timing alignment with DQS for robust DDR3-1333 operation |
| Write Leveling | Calibrates DQS-to-CK skew at system level using MPR read pattern - essential for timing margin optimization in high-speed layouts |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current by refreshing only active banks - extends battery life in portable industrial devices |
| Dynamic ODT (Rtt_WR) | Activates ODT only during write bursts on DQ/DQS lines - minimizes noise and improves signal integrity without affecting read paths |
| Multi-Purpose Register (MPR) | Outputs predefined calibration bit pattern (0x00000000) on DQ pins - enables automated system-level timing validation |
| Auto Self-Refresh (ASR) | Automatically enters Self-Refresh above 85°C using temperature sensor - maintains data retention without host intervention |
Applications
| Industrial PLC Memory Buffer | Network Switch Packet Buffer |
|---|---|
Use Scenario: Real-time deterministic control in programmable logic controllers requiring guaranteed memory access under wide temperature swings. IC Role / Device Role / Timing Role: Primary working memory with PASR and ASR support to maintain data integrity during ambient shifts from –40°C to +95°C. Use Value: Eliminates need for external temperature monitoring and manual refresh management while reducing standby current by >50% vs. full-array self-refresh. |
Use Scenario: High-throughput packet buffering in Layer 2/3 Ethernet switches handling 1+ Gbps line rates. IC Role / Device Role / Timing Role: Low-latency, burst-capable DDR3 buffer interfacing directly with MAC controllers via SSTL_15 I/O. Use Value: Enables 128 MB capacity with 9-9-9 timing and write leveling - achieving sub-15 ns tAA and stable tDQSS across PCB trace length mismatches. |
| Medical Imaging Data Cache | Video Surveillance DVR Memory |
Use Scenario: Temporary frame storage in portable ultrasound or X-ray units where EMI resilience and thermal reliability are critical. IC Role / Device Role / Timing Role: Burst-oriented memory subsystem using BC4 and DM masking for partial-frame writes with minimal bus contention. Use Value: On-die termination and ZQ calibration suppress reflections on compact, multi-layer PCBs - improving signal fidelity without discrete termination networks. |
Use Scenario: Continuous video stream buffering in outdoor-rated DVRs exposed to uncontrolled thermal cycling. IC Role / Device Role / Timing Role: Industrial-grade DDR3 memory supporting sustained 1080p@30fps write throughput with error-resilient refresh management. Use Value: Extended temperature qualification (–40°C to +95°C) plus ASR ensures uninterrupted recording during summer heat spikes without host firmware intervention. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K128M8RH-125:E | 1 G-bit DDR3L (1.35 V), 933 MHz max, 96-ball FBGA, supports CL = 9–11 only | Lower voltage operation but lacks industrial temperature rating (0°C to +90°C only); no ASR/PASR | Choose for power-constrained designs where 1.35 V operation is mandatory and extended temperature is not required |
| IS43TR16128B-125KBL | 2 G-bit DDR3 (1.5 V), 128-ball FBGA, CL = 9–11, supports DDR3-1600 only | Higher density and speed but rated only for commercial temp (0°C to +70°C); no RESET# pin or ZQ calibration | Choose when bandwidth >1333 MT/s is needed and industrial qualification is unnecessary |
Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, W631GG8KB15I uniquely combines industrial temperature support, asynchronous RESET#, ZQ calibration, and PASR/ASR - making it the only option among the three qualified for unattended operation in harsh thermal environments with autonomous refresh management.
Availability
W631GG8KB15I is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging systems requiring stable component supply, long-term lifecycle assurance, and guaranteed extended-temperature performance.
Supply support for W631GG8KB15I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.
W631GG8KB15I belongs to Winbond's DDR3 SDRAM product line, designed specifically for cost-sensitive, thermally demanding embedded systems requiring JEDEC-compliant DDR3 functionality with industrial-grade reliability and integrated calibration features.
FAQ
What is the maximum clock frequency supported by W631GG8KB15I?
W631GG8KB15I supports a maximum clock frequency of 667 MHz (DDR3-1333), corresponding to a data transfer rate of 1333 MT/s per pin. This is validated under industrial temperature conditions (–40°C to +95°C) with tAA/tRCD/tRP = 9-9-9 timing and VDD/VDDQ = 1.5 V ± 0.075 V. The device does not support higher speed bins such as DDR3-1600 or DDR3-1866.
Does W631GG8KB15I support on-die termination (ODT) and how is it configured?
Yes, W631GG8KB15I supports programmable on-die termination (ODT) on DQ, DQS, DQS#, and DM pins. ODT is enabled via the ODT pin and configured through Mode Register MR1, offering RTT_NOM values of 60 Ω, 120 Ω, or 40 Ω. It also supports dynamic ODT (Rtt_WR) during write operations, which is set via MR2 and improves signal integrity without affecting read paths.
What is the purpose of the ZQ pin on W631GG8KB15I and what external component is required?
The ZQ pin on W631GG8KB15I connects to an external 240 Ω ±1 % resistor to ground, enabling factory-trimmed calibration of output driver impedance and ODT resistance across voltage and temperature. This calibration occurs automatically after power-up and can be re-triggered via ZQCL command, ensuring consistent signal integrity without manual board-level tuning.
How does W631GG8KB15I handle refresh in extended temperature ranges above 85°C?
W631GG8KB15I supports Auto Self-Refresh (ASR) above 85°C via MR2 bit A6. When enabled, the internal temperature sensor triggers automatic entry into Self-Refresh mode with doubled refresh rate (tREFI = 3.9 µS), maintaining data retention up to +95°C without host intervention. This eliminates the need for external thermal monitoring or firmware-driven refresh adjustments.
Is W631GG8KB15I pin-compatible with other Winbond DDR3 SDRAMs in the same family?
W631GG8KB15I shares the same 78-ball WBGA package and pinout as other members of the W631GG8KB family (e.g., W631GG8KB-11, W631GG8KB12I), including identical ball assignments for CK/CK#, DQS/DQS#, RESET#, ZQ, and ODT. However, speed bin and temperature grade differences mean timing parameters and AC specifications are not interchangeable without controller reconfiguration.
W631GG8KB15I Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-TFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 667 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.425V ~ 1.575V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-WBGA (10.5x8)
W631GG8KB15I FAQ
1.How can I place an order for W631GG8KB15I through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GG8KB15I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GG8KB15I reliable?
The price and inventory of W631GG8KB15I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GG8KB15I is usually 5 days.
3.What payment methods are accepted for W631GG8KB15I?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GG8KB15I transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GG8KB15I?
W631GG8KB15I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GG8KB15I order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GG8KB15I?
For technical support, including W631GG8KB15I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GG8KB15I requirements.
6.How does Aetrix verify that W631GG8KB15I is sourced from the original manufacturer or authorized distributors?
All W631GG8KB15I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GG8KB15I meets industry standards.
7.What is the process for return or replacement of W631GG8KB15I?
All W631GG8KB15I units undergo pre-shipment inspection (PSI). If there is an issue with W631GG8KB15I, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GG8KB15I part is unused and in its original packaging.
Return procedure for W631GG8KB15I:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GG8KB15I Tags

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M24C02-WMN6TP
STMicroelectronics
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Microchip Technology
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