Winbond Electronics Corporation W631GG8KB-15 TR

Overview

W631GG8KB-15 TR from Winbond is a 1G-bit DDR3 SDRAM organized as 16M × 8 banks × 8 bits, supporting DDR3-1333 (9-9-9) speed grade with 667 MHz clock frequency, 1.5 V core/interface supply, and SSTL_15 I/O interface - deployed in memory subsystems of industrial embedded controllers and network edge devices requiring JEDEC-compliant low-power DRAM operation.

For engineers reviewing the W631GG8KB-15 TR datasheet, W631GG8KB-15 TR pinout, W631GG8KB-15 TR application, or W631GG8KB-15 TR equivalent, key selection criteria include CAS latency support (CL = 6, 7, 8, 9, 10), programmable CWL (5–7), ZQ calibration capability, asynchronous RESET#, and WBGA-78 package compatibility for space-constrained PCB layouts.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent row activation and interleaved burst access. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, and dynamic on-die termination (Rtt_WR) for write signal integrity.

Timing control is managed via four mode registers (MR0–MR3) configuring CAS latency, CWL, ODT settings, PASR, ASR, and MPR read patterns. The device uses differential CK/CK# and DQS/DQS# signaling with DLL alignment and supports write leveling for system-level timing calibration.

Key Specifications

Pinout & Package

W631GG8KB-15 TR uses a 78-ball Wafer-Level Ball Grid Array (WBGA) package measuring 8 mm × 10.5 mm with 0.8 mm ball pitch. The package supports high-density routing and thermal performance suitable for industrial memory modules.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K128M8RH-125:E and IS43TR16128B-15KBL, W631GG8KB-15 TR offers optimal balance of industrial temperature support, JEDEC DDR3-1333 timing compliance, PASR/ASR power optimization, and compact WBGA-78 footprint - making it preferred for space-constrained, thermally demanding embedded systems without DDR3L infrastructure.

Availability

W631GG8KB-15 TR is available at Aetrix Electronics and suitable for industrial PLCs, network edge routers, medical imaging subsystems, smart energy meters, and embedded gateways requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GG8KB-15 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

W631GG8KB-15 TR belongs to Winbond's DDR3 SDRAM product line, engineered for robust operation in extended-temperature industrial environments with emphasis on JEDEC compliance, low-power self-refresh, and system-level timing calibration features.

FAQ

What is the maximum clock frequency supported by W631GG8KB-15 TR?

W631GG8KB-15 TR supports a maximum clock frequency of 667 MHz, corresponding to DDR3-1333 data rate (1333 Mb/s per pin). This is validated under JEDEC conditions with CL=9, tRCD=tRP=13.5 ns, and VDD/VDDQ = 1.5 V ± 0.075 V. The -15 speed grade guarantees full AC/DC specifications across 0°C to 95°C case temperature.

Does W631GG8KB-15 TR support CAS Write Latency (CWL) configuration?

Yes, W631GG8KB-15 TR supports programmable CAS Write Latency (CWL) values of 5, 6, or 7, set via MR2. Write Latency (WL) is calculated as AL + CWL, where AL is configured in MR1. This allows precise alignment of DQS-to-write-data timing for system-level signal integrity optimization.

How does the ZQ calibration function work on W631GG8KB-15 TR?

W631GG8KB-15 TR performs ZQ calibration using an external 240 Ω ±1 % resistor connected to the ZQ pin. The internal circuitry measures this reference to tune output driver strength and on-die termination (ODT) resistance, ensuring consistent 34 Ω drive and 34/40/60/120 Ω ODT values across voltage and temperature variations.

Can W631GG8KB-15 TR operate in Partial Array Self Refresh (PASR) mode?

Yes, W631GG8KB-15 TR supports Partial Array Self Refresh (PASR) via MR2 configuration. PASR reduces self-refresh current by refreshing only selected banks or subarrays, lowering IDD6 from 14 mA to as low as ~7 mA depending on active bank count - critical for battery-backed industrial and medical applications.

What package type and ball count does W631GG8KB-15 TR use?

W631GG8KB-15 TR uses a 78-ball Wafer-Level Ball Grid Array (WBGA) package measuring 8 mm × 10.5 mm with 0.8 mm pitch. This compact RoHS-compliant, lead-free package supports fine-pitch routing and thermal dissipation suitable for dense industrial PCB layouts.