Winbond Electronics Corporation W631GG8MB-09

Overview

W631GG8MB-09 from Winbond is a 1 Gb (128 MB) DDR3 SDRAM organized as 16M × 8 banks × 8 bits, supporting DDR3-2133 speed grade (14-14-14 timing), 1.5 V core/interface supply, and industrial-grade operation from 0°C to 95°C. It implements eight internal banks, 8-bit prefetch architecture, programmable CAS Latency (CL = 5–14), and on-die termination (ODT) for high-speed memory subsystems in networking and embedded computing.

For engineers reviewing the W631GG8MB-09 datasheet, W631GG8MB-09 pinout, W631GG8MB-09 application, or W631GG8MB-09 equivalent, key selection considerations include its DDR3-2133 timing compliance, VFBGA-78 package with SSTL_15 I/O, ZQ calibration support, asynchronous RESET# pin, and dynamic ODT capability for signal integrity optimization in dense PCB layouts.

Technical Context

This DDR3 SDRAM uses differential clock inputs (CK/CK#) with input latching at the crosspoint, and source-synchronous DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. Its DLL aligns DQ and DQS transitions to CK, enabling stable data capture at 1066 MHz clock frequency (2133 MT/s).

The device supports programmable mode registers (MR0–MR3) for CAS Latency, CWL, additive latency (AL = 0, CL−1, CL−2), PASR, ASR, and dynamic ODT (Rtt_WR). It implements write leveling, MPR-based timing calibration, and ZQ calibration using an external 240 Ω resistor to ground for output driver and ODT impedance tuning.

Key Specifications

Pinout & Package

VFBGA-78 package (8 mm × 10.5 mm, 1.0 mm height) with ball pitch of 0.8 mm, RoHS-compliant and lead-free. Ball map conforms to JEDEC MO-245AC standard.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, W631GG8MB-09 delivers higher bandwidth (2133 MT/s), finer-grained power control (PASR/ASR), and production-ready signal integrity features (write leveling, ZQ, dynamic ODT) essential for demanding embedded systems.

Availability

W631GG8MB-09 is available at Aetrix Electronics and suitable for networking switch buffers, industrial HMI controllers, medical imaging subsystems, and automotive ADAS preprocessors requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GG8MB-09 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W631GG8MB series belongs to Winbond's high-reliability DDR3 SDRAM product line, designed specifically for embedded systems requiring extended temperature operation, robust signal integrity features, and JEDEC-compliant timing at DDR3-2133 speeds.

FAQ

What is the maximum data rate supported by W631GG8MB-09?

W631GG8MB-09 supports a maximum data rate of 2133 MT/s (megatransfers per second), corresponding to a 1066 MHz clock frequency. This is achieved under DDR3-2133 speed bin conditions with CL=14, tAA=13.09 ns, and full compliance with JEDEC JESD79-3F specifications for commercial/industrial temperature range (0°C to 95°C). The device maintains this performance using DLL-aligned DQS-to-CK timing and SSTL_15 I/O drive strength.

Does W631GG8MB-09 support dynamic on-die termination (Rtt_WR)?

Yes, W631GG8MB-09 supports dynamic ODT (Rtt_WR) as defined in MR2. This feature allows the device to activate on-die termination resistors only during write operations, improving signal integrity on the DQ/DQS/DM bus without impacting read path noise margins. Rtt_WR values are programmable via MR2 bits A0–A2 and operate independently from static ODT (Rtt_NOM) configured in MR1.

What package type and ball count does W631GG8MB-09 use?

W631GG8MB-09 uses a VFBGA-78 package measuring 8 mm × 10.5 mm with 1.0 mm thickness and 0.8 mm ball pitch. It is RoHS-compliant and lead-free, conforming to JEDEC MO-245AC. The 78-ball layout includes dedicated signals for CK/CK#, DQS/DQS#, DQ[0:7], DM[0:7], address, bank, command, and control lines - all optimized for high-density DDR3 routing with controlled impedance.

How does W631GG8MB-09 handle refresh at elevated temperatures?

At case temperatures above 85°C, W631GG8MB-09 requires doubled refresh frequency (tREFI = 3.9 µS instead of 7.8 µS) to maintain data retention. This is implemented either via Auto Self-Refresh (ASR) enabled in MR2 (A6=1b) or Manual Self-Refresh with Extended Temperature Range (MR2 A6=0b, A7=1b). The device automatically adjusts refresh timing when temperature exceeds 85°C, ensuring reliability up to 95°C without external intervention.

Can W631GG8MB-09 be used with DDR3L controllers?

No, W631GG8MB-09 is a standard DDR3 (1.5 V) device and is not compatible with DDR3L (1.35 V) controllers unless the host system supports dual-voltage I/O and can configure VDDQ to 1.5 V. Its SSTL_15 interface requires 1.5 V ± 75 mV supply; operation at 1.35 V violates DC specifications and risks timing failure, data corruption, or premature wear. Always verify controller VDDQ compliance before integration.