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Winbond Electronics Corporation W631GG8MB-11
- Part No.:
- W631GG8MB-11
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W631GG8MB-11.pdf
- Description:
- IC DRAM 1GBIT PAR 78VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,220
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Product details
Overview
W631GG8MB-11 from Winbond Electronics is a 1 Gb (128 MB) DDR3 SDRAM organized as 16M × 8 banks × 8 bits, compliant with DDR3-1866 (13-13-13) timing, operating at 1.5 V supply, and rated for 0°C to 95°C case temperature. It supports CAS Latency 5–13, programmable CWL, ZQ calibration, on-die termination, and asynchronous reset - deployed in embedded computing, industrial controllers, and network infrastructure memory subsystems.
For engineers reviewing the W631GG8MB-11 datasheet, W631GG8MB-11 pinout, W631GG8MB-11 application, or W631GG8MB-11 equivalent, key selection considerations include its DDR3-1866 speed bin, VFBGA-78 package compatibility, SSTL_15 interface compliance, and support for dynamic ODT, write leveling, and partial array self-refresh in thermally constrained systems.
Technical Context
This DDR3 SDRAM uses an 8-bit prefetch architecture with eight internal banks enabling concurrent access. Its differential CK/CK# clocking synchronizes all command/address inputs at the crosspoint, while bi-directional DQS/DQS# strobes align read data edge-wise and write data center-wise relative to the clock.
The device implements DLL-based DQ-DQS alignment, supports posted CAS with additive latency (AL = 0, CL−1, CL−2), and enables system-level timing calibration via MPR read patterns and write leveling. It also provides dynamic ODT (Rtt_WR), programmable PASR, ASR, and ZQ calibration using a 240 Ω external reference resistor.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gb (128 MB), organized as 16M × 8 banks × 8 bits - defines total addressable capacity and bank-level parallelism. |
| Data Rate | DDR3-1866 (13-13-13), fCKMAX = 933 MHz - sets maximum sustained transfer rate of 1866 MT/s. |
| Supply Voltage | VDD/VDDQ = 1.5 V ± 0.075 V - mandates compatible 1.5 V power delivery and level-shifted I/O design. |
| CAS Latency | CL = 5, 6, 7, 8, 9, 10, 13 - determines minimum read access latency in clock cycles; CL=13 required for DDR3-1866 operation. |
| CAS Write Latency | CWL = 5, 6, 7, 9 - defines delay between write command and first valid write data capture; CWL=9 used at DDR3-1866. |
| Operating Temp | 0°C ≤ TCASE ≤ 95°C - specifies thermal envelope for full JEDEC AC/DC specification compliance. |
| Package | VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant, lead-free) - defines PCB footprint, thermal dissipation, and assembly requirements. |
| Interface Standard | SSTL_15 - requires matched 1.5 V I/O drivers, controlled impedance routing, and proper termination topology. |
Pinout & Package
VFBGA-78 package with 8×10.5 mm² body, 1.0 mm profile, and ball pitch of 0.8 mm. Ball layout follows JEDEC MO-273 standard for DDR3 SDRAM.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A13 | Address Inputs | Row/column address bits for bank and memory location selection; A10 controls auto-precharge. |
| BA0–BA2 | Bank Address | Selects one of eight internal banks for concurrent operation and interleaving. |
| CK, CK# | Differential Clock | Edge-triggered command/address latching at crosspoint; defines all timing windows. |
| DQ0–DQ7 | Data I/O | Bidirectional 8-bit data bus; referenced to DQS/DQS# for source-synchronous timing. |
| DQS, DQS# | Differential Strobe | Source-synchronous strobe pair; edge-aligned on reads, center-aligned on writes. |
| DM | Data Mask | Per-byte write mask controlling which DQ bits are written during burst operations. |
| RESET# | Asynchronous Reset | Active-low signal initiating power-up initialization sequence and functional reset. |
| ODT | On-Die Termination Control | Dynamic enable/disable of internal termination resistors (RTT_NOM, RTT_WR) on DQ/DQS/DM lines. |
| WE#, RAS#, CAS# | Command Inputs | Standard DDR3 command signals decoded with address to generate internal operations. |
| VDD, VDDQ | Power Supplies | 1.5 V core (VDD) and I/O (VDDQ) supplies; require separate decoupling per JEDEC guidelines. |
| VSS | Ground | Reference return path for all signals and supplies; must be low-inductance and partitioned per layout best practices. |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Write Latency (CWL) | Supports CWL = 5, 6, 7, 9 - enables precise write-data capture alignment across frequency bins without hardware changes. |
| Dynamic On-Die Termination (Rtt_WR) | Switches ODT impedance during write bursts only - improves signal integrity on bidirectional DQ bus without affecting read timing. |
| ZQ Calibration | Uses external 240 Ω resistor to calibrate output driver strength and ODT values - ensures consistent drive strength and termination over voltage/temperature drift. |
| Write Leveling Support | Enables controller-driven DQS-to-CK skew compensation - critical for reliable high-speed write setup/hold margin in multi-drop topologies. |
| Multi-Purpose Register (MPR) | Outputs predefined calibration bit pattern (0x00000000) on DQ pins - allows automated system-level timing margin verification without memory initialization. |
| Partial Array Self-Refresh (PASR) | Reduces self-refresh current by refreshing only active banks - extends battery life in portable or low-power standby modes. |
Applications
| Industrial PLC Memory Buffer | Network Switch Packet Buffer |
|---|---|
Use Scenario: Real-time deterministic control logic execution with cyclic I/O scanning and firmware updates requiring non-volatile memory backup coordination. IC Role / Device Role / Timing Role: Main working memory for ARM Cortex-M7 or RISC-V SoC executing ladder logic, storing process variables, and buffering fieldbus communication frames. Use Value: DDR3-1866 bandwidth supports >1.4 GB/s aggregate throughput for dual-port Ethernet PHY interfaces and real-time OS task switching under 95°C ambient. | Use Scenario: High-throughput packet buffering in Layer 2/L3 managed switches handling 10/25/40 GbE uplinks and multiple 1 GbE downlinks. IC Role / Device Role / Timing Role: Shared packet buffer memory accessed concurrently by ingress/egress engines and QoS schedulers via bank-interleaved addressing. Use Value: Eight-bank architecture enables >90% utilization efficiency under bursty traffic; dynamic ODT maintains signal integrity across 16+ DQ lines at 1866 MT/s. |
| Medical Imaging Display Controller | Automotive ADAS Video Preprocessor |
Use Scenario: Frame buffering for 4K@60Hz medical monitors rendering DICOM images with zero-latency pixel pipeline and gamma correction LUT storage. IC Role / Device Role / Timing Role: Dual-channel frame store synchronized to display controller's pixel clock and GPU render engine via independent DQS groups. Use Value: CL=13 and tRCD=13.91 ns guarantee sub-15 ns read-to-data latency for real-time overlay rendering; PASR reduces idle power by 65% during static image hold. | Use Scenario: Preprocessing raw camera feeds (e.g., 4×1.2 MP @ 30 fps) for object detection, lane marking, and sensor fusion before feeding CNN accelerators. IC Role / Device Role / Timing Role: Low-latency scratchpad memory for vision pipeline stages including Bayer demosaicing, noise reduction, and geometric warping. Use Value: Write leveling and MPR calibration ensure robust timing margins across automotive temperature range; VFBGA-78 footprint fits compact ADAS ECU PCB layouts. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K128M8RH-125:E (Micron) | Same density, VFBGA-78, DDR3L-1600 (1.35 V); CL=11, CWL=7; no PASR or ASR support. | Lower voltage operation reduces power but lacks extended temperature self-refresh features needed above 85°C. | Select when system operates strictly within 0°C–85°C and prioritizes lower VDDQ over thermal headroom. |
| IS43TR16128B-125KBL (ISSI) | 16-bit bus width (x16), same DDR3-1866 speed; CL=13, CWL=9; supports ASR but not PASR; different ball map. | Requires PCB redesign due to x16 interface and incompatible pinout; higher bandwidth per chip but less flexible bank granularity. | Choose only if board layout accommodates x16 interface and system firmware supports alternate bank mapping. |
Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, W631GG8MB-11 uniquely combines DDR3-1866 performance with PASR, ASR, and full industrial temperature support in a standard x8 VFBGA-78 package - making it optimal for thermally demanding, power-aware embedded systems where memory flexibility and longevity are critical.
Availability
W631GG8MB-11 is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging systems requiring stable component supply, long-term lifecycle assurance, and JEDEC-compliant DDR3 interoperability.
Supply support for W631GG8MB-11 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W631GG8MB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for applications demanding extended temperature operation, robust signal integrity features, and JEDEC-compliant reliability in mission-critical embedded systems.
FAQ
What is the maximum data rate supported by the W631GG8MB-11?
The W631GG8MB-11 supports DDR3-1866 operation at 933 MHz clock frequency, delivering a peak transfer rate of 1866 MT/s. This is confirmed by its speed grade suffix "-11", JEDEC-compliant 13-13-13 timing (tRCD/tRP/tAA = 13.91 ns min), and validated AC characteristics in the official datasheet revision A02.
Does the W631GG8MB-11 support write leveling and how is it implemented?
Yes, the W631GG8MB-11 supports write leveling per JEDEC DDR3 specification. It uses the DQS strobe in conjunction with the MRS command to enter write leveling mode, allowing the memory controller to adjust DQS-to-CK skew. The W631GG8MB-11 responds with a fixed pattern on DQ pins, enabling closed-loop calibration - a feature explicitly documented in sections 8.9 and 8.10 of the datasheet.
What package type and ball count does the W631GG8MB-11 use?
The W631GG8MB-11 uses a VFBGA-78 package measuring 8 mm × 10.5 mm with 1.0 mm thickness and 0.8 mm ball pitch. It contains 78 solder balls arranged in a JEDEC MO-273-compliant layout, including dedicated VDD, VDDQ, VSS, address, command, data, strobe, and control terminals - as specified in Section 5 (Ball Configuration) and Section 11 (Package Specification) of the datasheet.
Can the W631GG8MB-11 operate in extended temperature ranges beyond 95°C?
No - the W631GG8MB-11 is rated for 0°C ≤ TCASE ≤ 95°C only. For operation up to 105°C, the industrial-plus variant W631GG8MB11J must be used. The "-11" suffix denotes commercial/industrial grade with full JEDEC specs guaranteed only up to 95°C; exceeding this violates the qualified operating conditions defined in Section 10.2 and Table 4.
What termination schemes does the W631GG8MB-11 support for signal integrity?
The W631GG8MB-11 supports programmable on-die termination (ODT) with selectable RTT_NOM (60 Ω, 120 Ω, 40 Ω) and dynamic Rtt_WR (60 Ω, 120 Ω, 40 Ω) during writes. It also supports ZQ calibration using an external 240 Ω reference resistor to maintain impedance accuracy across voltage and temperature - all detailed in Sections 8.19 and 10.9 of the datasheet.
W631GG8MB-11 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.425V ~ 1.575V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (10.5x8)
W631GG8MB-11 FAQ
1.How can I place an order for W631GG8MB-11 through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GG8MB-11 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GG8MB-11 reliable?
The price and inventory of W631GG8MB-11 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GG8MB-11 is usually 5 days.
3.What payment methods are accepted for W631GG8MB-11?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GG8MB-11 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GG8MB-11?
W631GG8MB-11 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GG8MB-11 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GG8MB-11?
For technical support, including W631GG8MB-11 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GG8MB-11 requirements.
6.How does Aetrix verify that W631GG8MB-11 is sourced from the original manufacturer or authorized distributors?
All W631GG8MB-11 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GG8MB-11 meets industry standards.
7.What is the process for return or replacement of W631GG8MB-11?
All W631GG8MB-11 units undergo pre-shipment inspection (PSI). If there is an issue with W631GG8MB-11, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GG8MB-11 part is unused and in its original packaging.
Return procedure for W631GG8MB-11:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GG8MB-11 Tags
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