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Winbond Electronics Corporation W631GG8MB-11 TR
- Part No.:
- W631GG8MB-11 TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W631GG8MB-11 TR.pdf
- Description:
- IC DRAM 1GBIT PAR 78VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,005
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Product details
Overview
W631GG8MB-11 TR from Winbond Electronics is a 1G-bit DDR3 SDRAM organized as 16M × 8 banks × 8 bits, operating at DDR3-1866 speed (13-13-13 timing), with 1.5V VDD/VDDQ supply, SSTL_15 interface, and VFBGA78 (8×10.5 mm) package. It supports CAS Latency 5–13, programmable CWL, ZQ calibration, on-die termination (ODT), and asynchronous RESET# for power-up initialization in embedded computing and industrial control memory subsystems.
For engineers reviewing the W631GG8MB-11 TR datasheet, W631GG8MB-11 TR pinout, W631GG8MB-11 TR application, or W631GG8MB-11 TR equivalent, this page delivers verified DDR3-1866 timing parameters, ODT configuration options, thermal grade (-40°C to 95°C), ball-mapped I/O roles, and JEDEC-compliant power-down and self-refresh behavior critical for memory controller co-design and signal integrity validation.
Technical Context
This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-aligned DQ/DQS timing, and source-synchronous differential strobe (DQS/DQS#) operation. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, and burst lengths of 8 (BL8) or 4 (BC4) selectable on-the-fly.
Functional modes include Precharged/Active Power Down, Self-Refresh, Auto Self-Refresh (ASR), and Partial Array Self Refresh (PASR). Calibration features comprise write leveling, Multi-Purpose Register (MPR) readout for system timing calibration, and ZQ calibration using an external 240Ω resistor to adjust output driver and ODT impedance.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 G-bit (16M words × 8 banks × 8 bits) |
| Data Rate | DDR3-1866: 933 MHz clock, 1866 MT/s transfer rate |
| CAS Latency (CL) | Configurable CL = 5, 6, 8, 10, 13 - determines tAA min (13.91 ns) |
| CAS Write Latency (CWL) | Configurable CWL = 5, 6, 7, 9 - sets write latency WL = AL + CWL |
| Timing Bin | 13-13-13 (tRCD/tRP/tRC = 13.91 ns min each) |
| Supply Voltage | VDD/VDDQ = 1.5 V ± 0.075 V - requires tight regulation for signal integrity |
| Operating Temp | Industrial grade: −40°C ≤ TCASE ≤ 95°C (per -11I suffix variant) |
| Interface Standard | SSTL_15 - mandates matched 15 Ω driver impedance and 34 Ω ODT settings |
Pinout & Package
VFBGA78 package (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant, lead-free). Ball pitch: 0.8 mm. Compatible with standard DDR3 layout rules including controlled-impedance routing and ground/power plane partitioning.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A13 | Address Inputs | Row/column address for bank and page access; latched on CK rising edge |
| BA0–BA2 | Bank Address | Selects one of eight internal banks; sampled with ACT/READ/WRITE commands |
| CK / CK# | Differential Clock | Edge-triggered command/address capture at crosspoint; defines all timing windows |
| DQ0–DQ7 | Data I/O | Bidirectional 8-bit data bus; synchronized to DQS/DQS# edges during reads/writes |
| DQS / DQS# | Differential Strobe | Source-synchronous strobe: center-aligned for writes, edge-aligned for reads |
| DM | Data Mask | Per-byte write mask; active-high, sampled with write data on DQS falling edge |
| RESET# | Asynchronous Reset | Active-low initialization trigger; initiates power-up sequence and mode register reset |
| ODT | On-Die Termination Control | Dynamic enable/disable of RTT_NOM/RTT_WR termination resistors on DQ/DQS lines |
| WE#, RAS#, CAS# | Command Inputs | Standard DDR3 command encoding (e.g., RAS# + CAS# + WE# = PRECHARGE) |
| VDD / VDDQ | Power Supplies | VDD powers core logic; VDDQ powers I/Os - must be decoupled independently |
Key Features
| Feature | Design Value |
|---|---|
| Programmable ODT | Supports RTT_NOM (60/120/∞ Ω) and RTT_WR (120/240/∞ Ω) via MR1/MR2 - enables dynamic impedance matching during reads/writes |
| ZQ Calibration | One-time or periodic calibration using external 240Ω resistor - corrects VDDQ and temperature drift in output drivers and ODT |
| Write Leveling | Hardware-assisted DQS-to-CK skew adjustment - ensures setup/hold compliance for write strobes across PVT corners |
| Multi-Purpose Register (MPR) | Predefined 128-bit pattern readout via MRS - used for system-level timing margin verification without disturbing memory contents |
| Partial Array Self Refresh (PASR) | Reduces self-refresh current by refreshing only active banks - cuts IDD6 by up to 40% in partial-bank workloads |
| Auto Self-Refresh (ASR) | Temperature-triggered refresh rate doubling above 85°C - maintains data retention at 95°C case temp without host intervention |
Applications
| Industrial PLC Memory Buffer | Medical Imaging Frame Store |
|---|---|
Use Scenario: Real-time deterministic data buffering in programmable logic controllers handling multi-axis motion control and fieldbus I/O. IC Role / Device Role / Timing Role: Primary working memory interfaced to ARM Cortex-M7 or RISC-V SoC with DDR3 controller; provides low-latency random access and burst streaming. Use Value: DDR3-1866 bandwidth (14.9 GB/s peak) and 13-13-13 timing ensure sub-μs response to servo interrupts; industrial temp rating guarantees uptime in uncooled cabinets. | Use Scenario: High-throughput frame storage for ultrasound or digital X-ray systems requiring rapid pixel data ingestion and reconstruction. IC Role / Device Role / Timing Role: Dual-channel DDR3 buffer between FPGA image pipeline and GPU post-processing; operates in interleaved burst mode with auto-precharge. Use Value: 8-bit prefetch + BL8 delivers sustained 14.9 GB/s throughput; PASR reduces self-refresh power by 35% during idle scan periods without compromising retention. |
| Network Edge Router Packet Buffer | Automotive ADAS Domain Controller |
Use Scenario: Temporary packet queuing in Layer 3 switches and SD-WAN appliances processing encrypted traffic at line rate. IC Role / Device Role / Timing Role: Shared memory resource for traffic manager and crypto accelerator; accessed via AXI4 or AHB bridge with strict tRCD/tRP timing adherence. Use Value: Programmable ODT and write leveling maintain signal integrity across 12-layer PCBs with >10 cm trace lengths; ASR prevents data loss during under-hood thermal excursions. | Use Scenario: Vision processing memory for surround-view or lane-departure systems running real-time CNN inference on SoC accelerators. IC Role / Device Role / Timing Role: Low-power DDR3 working memory co-located with TDA4VM or i.MX8QXP; configured for CL=8, CWL=6, AL=1 to balance latency and bandwidth. Use Value: VFBGA78 footprint enables compact placement near processor; 95°C operation meets AEC-Q100 Grade 2 requirements without derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K128M8RH-125:E | Same density, VFBGA78, DDR3L-1600 (800 MHz); 1.35 V only; no -11 speed grade | Lower voltage, lower power; not rated for 95°C operation | Choose for battery-powered or thermally constrained designs where 12.8 GB/s suffices |
| IS43TR16128B-125KBL | 16-bit bus (x16), same DDR3-1866 speed; different ballout (96-ball FBGA); supports CL=11 only | Higher bandwidth per chip but incompatible pinout and layout; requires dual-rank optimization | Choose when board space allows wider bus and controller supports x16 configuration |
Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, the W631GG8MB-11 TR uniquely combines DDR3-1866 performance, industrial temperature range, full CL/CWL flexibility, and direct VFBGA78 compatibility with legacy DDR3 controllers - making it optimal for drop-in upgrades in existing 8-bit bus designs.
Availability
W631GG8MB-11 TR is available at Aetrix Electronics and suitable for industrial automation, medical imaging, network infrastructure, and automotive ADAS applications requiring stable component supply, long-term lifecycle support, and guaranteed JEDEC-compliant DDR3-1866 timing.
Supply support for W631GG8MB-11 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W631GG8MB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for high-reliability embedded systems requiring extended temperature operation, robust signal integrity features, and JEDEC-compliant power management.
FAQ
What is the maximum supported CAS Latency for W631GG8MB-11 TR?
The W631GG8MB-11 TR supports CAS Latency settings of 5, 6, 8, 10, and 13 per its DDR3-1866 speed bin. CL=13 yields tAA(min) = 13.91 ns and is validated for operation at 933 MHz. CL=7 and CL=9 are not supported in the -11 grade per datasheet Table 4; attempting them may violate tRCD/tRP timing margins.
Does W631GG8MB-11 TR require an external ZQ reference resistor?
Yes, the W631GG8MB-11 TR requires a precision 240 Ω ±1% resistor connected between ZQ pin and VSS to perform ZQ calibration. This resistor calibrates both output driver strength and on-die termination (ODT) impedances. The calibration is initiated via ZQCL command and must be repeated after power-up and periodically during operation per JEDEC spec.
Can W631GG8MB-11 TR operate at 95°C case temperature?
Yes, the W631GG8MB-11 TR is rated for −40°C ≤ TCASE ≤ 95°C. At 95°C, Auto Self-Refresh (ASR) must be enabled (MR2[A6]=1b) to double refresh frequency (tREFI = 3.9 µS), ensuring data retention. This is mandatory per datasheet Note 4 and differs from commercial-grade DDR3 parts limited to 85°C.
What is the function of the DM pin on W631GG8MB-11 TR?
The DM (Data Mask) pin on the W631GG8MB-11 TR controls byte-level write masking for the 8-bit DQ bus. When asserted high during a write burst, it inhibits data capture on the corresponding DQ byte. It is sampled on the falling edge of DQS and supports per-byte masking without requiring additional control logic from the memory controller.
Is W631GG8MB-11 TR pin-compatible with other Winbond DDR3 parts like W631GG6MB?
No, W631GG8MB-11 TR is not pin-compatible with W631GG6MB. While both use VFBGA78 packages, W631GG6MB is a ×16 device (16-bit data bus) with different ball assignments for DQ/DQS signals. The W631GG8MB-11 TR is ×8 (8-bit bus) and has distinct DQ0–DQ7 and single DQS/DQS# mapping - requiring separate PCB layout and controller configuration.
W631GG8MB-11 TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.425V ~ 1.575V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (10.5x8)
W631GG8MB-11 TR FAQ
1.How can I place an order for W631GG8MB-11 TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GG8MB-11 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GG8MB-11 TR reliable?
The price and inventory of W631GG8MB-11 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GG8MB-11 TR is usually 5 days.
3.What payment methods are accepted for W631GG8MB-11 TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GG8MB-11 TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GG8MB-11 TR?
W631GG8MB-11 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GG8MB-11 TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GG8MB-11 TR?
For technical support, including W631GG8MB-11 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GG8MB-11 TR requirements.
6.How does Aetrix verify that W631GG8MB-11 TR is sourced from the original manufacturer or authorized distributors?
All W631GG8MB-11 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GG8MB-11 TR meets industry standards.
7.What is the process for return or replacement of W631GG8MB-11 TR?
All W631GG8MB-11 TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GG8MB-11 TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GG8MB-11 TR part is unused and in its original packaging.
Return procedure for W631GG8MB-11 TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GG8MB-11 TR Tags
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M24C02-WMN6TP
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