Winbond Electronics Corporation W631GG8MB12I TR

Overview

W631GG8MB12I TR from Winbond Electronics is a 1 Gb (128 MB) DDR3 SDRAM organized as 16M × 8 banks × 8 bits, operating at DDR3-1600 speed (800 MHz clock, 11-11-11 timing), with industrial temperature support (–40°C to +95°C), 1.5 V supply, and VFBGA-78 package. It serves as main system memory in embedded controllers, networking processors, and industrial HMIs requiring reliable high-bandwidth data buffering.

For engineers reviewing the W631GG8MB12I TR datasheet, W631GG8MB12I TR pinout, W631GG8MB12I TR application, or W631GG8MB12I TR equivalent, key selection considerations include CAS Latency (CL=5–11), programmable CWL (5–8), ZQ calibration support, on-die termination (RTT_NOM/RTT_WR), and industrial-grade thermal stability under sustained burst read/write loads.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks for concurrent access, differential CK/CK# and DQS/DQS# signaling, and DLL-based alignment of DQ transitions to strobe edges. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, and both synchronous and dynamic ODT modes.

Functional operation relies on mode register programming (MR0–MR3) for CAS Latency, CWL, PASR, ASR, and MPR configuration. Initialization requires asynchronous RESET# assertion followed by stable power-up sequence and ZQ calibration; write leveling is supported for system-level timing calibration at board level.

Key Specifications

Pinout & Package

VFBGA-78 package with 8×10.5 mm² body, 1.0 mm thickness, and 0.8 mm ball pitch. Ball assignment follows JEDEC-standard DDR3 layout with dedicated VDD, VDDQ, VSS, VSSQ, and ZQ pins.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, W631GG8MB12I TR offers native 1.5 V compatibility without voltage translation, x8 bus efficiency for resource-constrained controllers, and full CWL=5–8 support for optimal write timing margining in industrial thermal environments.

Availability

W631GG8MB12I TR is available at Aetrix Electronics and suitable for industrial HMIs, networking processors, embedded vision systems, medical imaging devices, and automotive infotainment head units requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GG8MB12I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and DDR SDRAM, with ISO/TS 16949 and ISO 14001 certifications.

The W631GG8MB series targets cost-sensitive, thermally demanding embedded applications where industrial-grade DDR3 performance, JEDEC compliance, and long-term supply stability are critical design requirements.

FAQ

What is the maximum data rate supported by the W631GG8MB12I TR?

The W631GG8MB12I TR supports DDR3-1600 operation at 1600 MT/s (800 MHz clock frequency), compliant with JEDEC specification 11-11-11 timing. Its fCKMAX is 800 MHz under specified industrial temperature and voltage conditions. This data rate is fixed for the -12I speed grade and cannot be overclocked beyond validated limits without violating AC timing parameters or thermal specifications. The W631GG8MB12I TR achieves this rate using DLL-aligned DQS-to-DQ timing and SSTL_15 I/O signaling.

Does the W631GG8MB12I TR support automatic self-refresh (ASR)?

Yes, the W631GG8MB12I TR supports Auto Self-Refresh (ASR) via Mode Register 2 (MR2) bit A6. When enabled (MR2[A6] = 1), the device automatically adjusts refresh rate based on junction temperature - doubling frequency to 3.9 µS interval above 85°C. This eliminates host controller intervention during thermal excursions and ensures data retention compliance across its full –40°C to +95°C operating range. ASR is mandatory for operation above 85°C per JEDEC requirements.

How is on-die termination (ODT) configured on the W631GG8MB12I TR?

ODT on the W631GG8MB12I TR is configured through Mode Registers MR1 and MR2. MR1 sets nominal termination (RTT_NOM = 75 Ω, 150 Ω, or off) for reads, while MR2 configures dynamic write termination (RTT_WR = 75 Ω, 120 Ω, or off). ODT state is controlled by the ODT pin and can be enabled/disabled per command cycle. The W631GG8MB12I TR also supports ZQ calibration to maintain ±10% impedance accuracy across voltage and temperature variations.

What package type and ball count does the W631GG8MB12I TR use?

The W631GG8MB12I TR uses a VFBGA-78 package: 8 mm × 10.5 mm body size, 1.0 mm height, 0.8 mm ball pitch, and RoHS-compliant lead-free construction. It contains 78 solder balls arranged in a JEDEC-standard DDR3 layout with dedicated power, ground, address, command, data, strobe, and calibration pins. This package is optimized for high-density PCB routing and thermal dissipation in space-constrained industrial designs.

Can the W631GG8MB12I TR operate at CAS Latency 7?

Yes, the W631GG8MB12I TR supports CAS Latency 7 (CL=7) as part of its Sup_CL range (5, 6, 7, 8, 9, 10, 11). However, CL=7 is marked as optional in the -12I speed grade and requires tAA/tRCD/tRP minimum values ≤13.125 ns - verified via SPD programming and controller timing setup. Use of CL=7 enables reduced read latency in latency-critical applications but must be validated with actual board-level signal integrity and timing margin analysis.