Winbond Electronics Corporation W631GG8MB-12 TR

Overview

W631GG8MB-12 TR from Winbond Electronics is a 1 Gb (128 MB) DDR3 SDRAM organized as 16M × 8 banks × 8 bits, compliant with DDR3-1600 (11-11-11) timing, operating at 800 MHz clock frequency with VDD/VDDQ = 1.5 V ± 0.075 V, and packaged in a RoHS-compliant 78-ball VFBGA (8 mm × 10.5 mm, 1.0 mm height). It serves as main memory or frame buffer in embedded controllers, industrial HMIs, and network edge devices requiring reliable high-bandwidth data access.

For engineers reviewing the W631GG8MB-12 TR datasheet, W631GG8MB-12 TR pinout, W631GG8MB-12 TR application, or W631GG8MB-12 TR equivalent, this page delivers verified DDR3-1600 timing parameters, ball configuration, ODT and ZQ calibration support, CAS Write Latency (CWL = 5–8), and industrial-grade thermal operation (0°C to 95°C case temperature).

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks for concurrent access, differential CK/CK# and DQS/DQS# signaling, and DLL-aligned I/O timing. It supports programmable CAS Latency (CL = 5–11), additive latency (AL = 0, CL−1, CL−2), and posted CAS for command bus efficiency.

Functional features include asynchronous RESET#, on-die termination (ODT) with synchronous/dynamic modes, ZQ calibration using external 240 Ω resistor, write leveling for timing margin optimization, and multi-purpose register (MPR) readout of calibration bit patterns - all aligned with JEDEC DDR3 standard JESD79-3F.

Key Specifications

Pinout & Package

W631GG8MB-12 TR uses a 78-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.8 mm ball pitch, 8 mm × 10.5 mm footprint, and 1.0 mm maximum height. Ball assignment follows JEDEC-standard DDR3 layout optimized for signal integrity and routing density in space-constrained PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, W631GG8MB-12 TR offers native 1.5 V operation in a compact 78-ball VFBGA, making it optimal for cost-sensitive industrial designs where 1.5 V supply is already present and board space is constrained.

Availability

W631GG8MB-12 TR is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, embedded vision systems, and medical diagnostic imaging equipment requiring stable component supply across production lifecycles.

Supply support for W631GG8MB-12 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W631GG8MB product line delivers JEDEC-compliant DDR3 SDRAM targeting cost-optimized, thermally robust embedded systems where reliability and long-term supply stability are critical design requirements.

FAQ

What is the maximum clock frequency supported by W631GG8MB-12 TR?

W631GG8MB-12 TR supports a maximum clock frequency of 800 MHz, enabling a data transfer rate of 1600 MT/s (DDR3-1600). This is confirmed by its speed grade suffix "-12", which corresponds to the 11-11-11 timing bin and fCKMAX = 800 MHz under specified operating conditions (VDD/VDDQ = 1.5 V ± 0.075 V, 0°C ≤ TCASE ≤ 95°C). The device does not support higher frequencies such as DDR3-1866 or DDR3-2133.

Does W631GG8MB-12 TR support industrial temperature operation?

Yes, W631GG8MB-12 TR is rated for 0°C ≤ TCASE ≤ 95°C, meeting industrial temperature requirements. It is not qualified for extended industrial range (−40°C to 105°C); that capability is provided by variants such as W631GG8MB12J. The -12 suffix specifically denotes commercial/industrial grade operation within the 0°C–95°C range, with full JEDEC AC/DC specifications validated across this interval.

What package type and ball count does W631GG8MB-12 TR use?

W631GG8MB-12 TR uses a 78-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 8 mm × 10.5 mm with 1.0 mm maximum height. This JEDEC-standard footprint features 0.8 mm ball pitch and is lead-free and RoHS-compliant. The ball configuration includes dedicated CK/CK#, DQS/DQS#, address, command, and data terminals arranged to minimize crosstalk and support high-density PCB routing.

How does ZQ calibration function on W631GG8MB-12 TR?

ZQ calibration on W631GG8MB-12 TR uses the dedicated ZQ pin connected to a 240 Ω ±1% external resistor to ground. Upon receiving a ZQCL command, the device measures this reference to calibrate both its 34 Ω output drivers and on-die termination (ODT) impedances. Calibration occurs at power-up and can be re-executed during operation to compensate for voltage/temperature drift, ensuring consistent signal integrity across the full operating range.

Can W631GG8MB-12 TR operate with DDR3L (1.35 V) supplies?

No, W631GG8MB-12 TR is specified exclusively for VDD/VDDQ = 1.5 V ± 0.075 V and is not rated for DDR3L operation at 1.35 V. Applying 1.35 V may result in unreliable initialization, timing violations, or failure to meet AC specifications. For 1.35 V compatibility, Winbond offers DDR3L-specific variants such as W631GG8MB-125L, which are distinct part numbers with different speed grading and electrical validation.