Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Winbond Electronics Corporation W631GG8MB-15

Part No.:
W631GG8MB-15
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
78-VFBGA
Datasheet:
AetrixW631GG8MB-15.pdf
Description:
IC DRAM 1GBIT PAR 78VFBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,954

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

W631GG8MB-15 from Winbond Electronics is a 1 Gb (128 MB) DDR3 SDRAM organized as 16M × 8 banks × 8 bits, compliant with JEDEC DDR3-1333 (9-9-9) timing, operating at 667 MHz clock frequency with 1.5 V VDD/VDDQ supply, and designed for embedded computing, industrial control, and networking equipment requiring reliable high-bandwidth memory buffering.

For engineers reviewing the W631GG8MB-15 datasheet, W631GG8MB-15 pinout, W631GG8MB-15 application, or W631GG8MB-15 equivalent, key selection considerations include its -15 speed grade (DDR3-1333), industrial-grade temperature range (0°C to 95°C), VFBGA-78 package, SSTL_15 interface compatibility, and support for ZQ calibration, dynamic ODT, and write leveling.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, uses differential CK/CK# and DQS/DQS# signaling for source-synchronous data transfer, and supports programmable CAS Latency (CL = 5–10) and CAS Write Latency (CWL = 5–7) optimized for DDR3-1333 operation.

It features asynchronous RESET# for power-up initialization, on-die termination (ODT) with selectable RTT values (60 Ω, 120 Ω, 40 Ω), dynamic ODT during writes, and multi-purpose register (MPR) support for system-level timing calibration-enabling robust signal integrity in high-speed memory subsystems.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density1 Gb (128 MB), organized as 16M words × 8 banks × 8 bits - defines total addressable capacity and bank-level parallelism.
Data Rate1333 MT/s (DDR3-1333) - determines peak bandwidth of 10.66 GB/s in x8 configuration.
Timing SpecificationCL-tRCD-tRP = 9-9-9 - sets minimum clock-cycle delays for read latency, row-to-column delay, and precharge delay.
Supply VoltageVDD/VDDQ = 1.5 V ± 0.075 V - mandates compatible 1.5 V power delivery and SSTL_15 I/O voltage reference.
Operating Temperature0°C ≤ TCASE ≤ 95°C - qualifies for commercial and extended industrial environments without derating.
PackageVFBGA-78 (8 mm × 10.5 mm, 1.0 mm height) - surface-mount footprint with 0.8 mm ball pitch, RoHS-compliant and lead-free.
Interface StandardSSTL_15 - ensures signal integrity compliance with JEDEC DDR3 input/output voltage thresholds and slew rate requirements.
Refresh IntervaltREFI = 7.8 µs (0°C–85°C), 3.9 µs (85°C–95°C) - dictates refresh controller timing and impacts self-refresh current (IDD6 ≤ 10 mA).

Pinout & Package

VFBGA-78 package with 8×10.5 mm² footprint, 1.0 mm thickness, and 0.8 mm ball pitch. Balls arranged in 9 rows (A–J, excluding row H) and 9 columns (1–9), with corner balls A1 and J9 omitted.

Pin/TerminalCircuit RoleDesign Meaning
A1–A9, B1–B9, C1–C9, D1–D9, E1–E9, F1–F9, G1–G9, J1–J9 (excluding H-row)Address/Command/Data/Strobe/ControlBall mapping follows JEDEC-standard DDR3 VFBGA-78 layout: A1=A11 (A10), B1=CK, B2=CK#, C1=DQ0, C2=DQ1… G8=DQS#, J9=VSS - full pinout defined in datasheet Section 5.
VDD, VDDQ, VSS, VSSQPower and GroundDedicated power balls distributed across array (e.g., A3/A4/B3/B4/C3/C4) ensure low-impedance supply routing and noise suppression.
RESET#, CKE, CS#, RAS#, CAS#, WE#, DM0–DM0Control SignalsAsynchronous RESET# enables hardware-initiated initialization; CKE gates clock enable; CS#/RAS#/CAS#/WE# decode command bus per JEDEC DDR3 protocol.
DQ0–DQ7, DQS, DQS#, DBIData Interface8-bit bidirectional data bus with source-synchronous differential strobes (DQS/DQS#) aligned to CK/CK# edges; DBI supports data bus inversion for reduced switching noise.

Key Features

FeatureDesign Value
Programmable CAS LatencyCL = 5–10 supported; enables tuning of read latency to match system timing margins and clock frequency.
ZQ CalibrationUses external 240 Ω ±1 % resistor to calibrate output driver impedance and ODT resistance - critical for consistent signal integrity across voltage/temperature.
Dynamic ODTRTT_WR configurable via MR2 to apply termination only during write bursts (e.g., 60 Ω or 120 Ω), reducing standby power and improving write eye margin.
Write Leveling SupportEnables controller-driven DQS-to-CK skew compensation during initialization - essential for timing closure at 1333 MT/s with PCB trace length mismatch.
Multi-Purpose Register (MPR)Provides predefined 128-bit pattern for system-level timing calibration; eliminates need for external test patterns during production validation.
Partial Array Self Refresh (PASR)Allows selective refresh of active banks only - reduces IDD6 current by up to 40 % when full-array refresh is unnecessary.

Applications

Industrial PLC Memory BufferNetwork Switch Packet Buffer

Use Scenario: Real-time deterministic control logic execution with burst data logging in programmable logic controllers.

IC Role / Device Role / Timing Role: Primary working memory for firmware execution and I/O state buffering; operates under continuous thermal cycling (0°C–95°C).

Use Value: DDR3-1333 bandwidth meets cycle-time requirements for 100+ I/O point scanning; PASR and low IDD6 reduce thermal load in sealed enclosures.

Use Scenario: Temporary storage of Ethernet frames during line-rate forwarding in Layer 2/L3 switches.

IC Role / Device Role / Timing Role: High-throughput packet buffer interfaced to MAC controllers via 8-bit DDR3 bus; synchronized to 333 MHz system clock.

Use Value: 10.66 GB/s peak bandwidth sustains 10 Gbps full-duplex traffic; dynamic ODT minimizes write jitter on dense backplane traces.

Medical Imaging Display ControllerAutomotive Infotainment Head Unit

Use Scenario: Frame buffering for high-resolution DICOM image rendering in diagnostic monitors.

IC Role / Device Role / Timing Role: Dual-port memory resource shared between GPU and display engine; accessed via burst reads/writes with strict tRCD/tRP adherence.

Use Value: CL9 timing ensures sub-15 ns row activation latency; SSTL_15 compatibility guarantees signal fidelity over 8-layer PCB interconnects.

Use Scenario: Application runtime memory for Android-based infotainment systems with multimedia decoding.

IC Role / Device Role / Timing Role: Main system RAM for OS and application code; co-located with SoC in compact automotive module with limited airflow.

Use Value: 95°C case rating avoids derating in dashboard-mounted units; write leveling ensures timing margin at temperature extremes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MT41K128M8RH-125:E (Micron)DDR3L-1600 (800 MHz), 1.35 V VDD/VDDQ, same VFBGA-78 package, CL11 timing.Requires lower-voltage power rail; higher bandwidth but tighter timing margins; not drop-in due to voltage and CL mismatch.Select if system supports DDR3L and needs higher throughput; verify power delivery and timing closure.
IS43TR16128B-15KBL (ISSI)DDR3-1333 (667 MHz), 1.5 V, VFBGA-96 package (9×11 mm), CL9, but 16-bit data bus (x16).Larger footprint and doubled data width; incompatible pinout and bus topology; requires PCB redesign.Consider only for new designs targeting wider memory bus; not suitable for direct replacement of W631GG8MB-15.

Compared with MT41K128M8RH-125:E and IS43TR16128B-15KBL, the W631GG8MB-15 offers guaranteed 1.5 V operation, exact CL9-9-9 timing at 667 MHz, and VFBGA-78 compatibility - making it optimal for cost-sensitive industrial designs where voltage stability and layout reuse are prioritized over bandwidth scaling.

Availability

W631GG8MB-15 is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical electronics requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for W631GG8MB-15 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W631GG8MB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, engineered for reliability in extended temperature environments and designed to meet JEDEC standards while supporting advanced features like ZQ calibration and dynamic ODT.

FAQ

What is the maximum data rate supported by the W631GG8MB-15?

The W631GG8MB-15 supports a maximum data rate of 1333 MT/s (megatransfers per second), corresponding to a 667 MHz clock frequency and DDR3-1333 timing specification (CL-tRCD-tRP = 9-9-9). This is confirmed in the device's order information table and electrical characteristics section, where the -15 speed grade is explicitly rated for DDR3-1333 operation under 0°C to 95°C case temperature conditions.

Does the W631GG8MB-15 support write leveling?

Yes, the W631GG8MB-15 supports write leveling as a mandatory feature per JEDEC DDR3 specification. It uses the DQS strobe and internal DLL to enable controller-driven skew calibration between DQS and CK during initialization, ensuring timing alignment for reliable writes at 1333 MT/s. This capability is documented in Sections 8.9 and 10.16 of the datasheet.

What package type and ball count does the W631GG8MB-15 use?

The W631GG8MB-15 uses a VFBGA-78 package measuring 8 mm × 10.5 mm with 1.0 mm thickness and 0.8 mm ball pitch. It contains 78 solder balls arranged in a 9×9 grid (rows A–J excluding H, columns 1–9), conforming to JEDEC MO-270AB standard. This is specified in Section 11 (Package Specification) and Section 5 (Ball Configuration) of the datasheet.

Can the W631GG8MB-15 operate at temperatures above 85°C?

Yes, the W631GG8MB-15 is rated for operation up to 95°C case temperature (TCASE), as stated in the Order Information table for the -15 speed grade. At 85°C < TCASE ≤ 95°C, the device requires doubling the auto-refresh frequency (tREFI = 3.9 µs) and supports either Manual Self-Refresh with Extended Temperature Range mode (MR2[A6:A7] = 0b1) or Auto Self-Refresh (ASR) mode (MR2[A6] = 1b).

What termination options are available on the W631GG8MB-15?

The W631GG8MB-15 provides programmable on-die termination (ODT) with static RTT values of 60 Ω, 120 Ω, and 40 Ω (via MR1), plus dynamic ODT (Rtt_WR) during writes using the same impedance options. Termination applies to DQ, DQS/DQS#, and DM signals. These settings are configured through mode registers and validated in Section 8.3.2.3 and Table 10.9.2 of the datasheet.

W631GG8MB-15 Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
78-VFBGA
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR3
Memory Size:
1Gbit
Memory Organization:
128M x 8
Memory Interface:
Parallel
Clock Frequency:
667 MHz
Write Cycle Time - Word, Page:
-
Access Time:
20 ns
Voltage - Supply:
1.425V ~ 1.575V
Operating Temperature:
0°C ~ 95°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
78-VFBGA (10.5x8)

W631GG8MB-15 FAQ

1.How can I place an order for W631GG8MB-15 through Aetrix?

Please submit a Request for Quotation (RFQ) for W631GG8MB-15 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W631GG8MB-15 reliable?

The price and inventory of W631GG8MB-15 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GG8MB-15 is usually 5 days.

3.What payment methods are accepted for W631GG8MB-15?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GG8MB-15 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W631GG8MB-15?

W631GG8MB-15 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W631GG8MB-15 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W631GG8MB-15?

For technical support, including W631GG8MB-15 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GG8MB-15 requirements.

6.How does Aetrix verify that W631GG8MB-15 is sourced from the original manufacturer or authorized distributors?

All W631GG8MB-15 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GG8MB-15 meets industry standards.

7.What is the process for return or replacement of W631GG8MB-15?

All W631GG8MB-15 units undergo pre-shipment inspection (PSI). If there is an issue with W631GG8MB-15, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W631GG8MB-15 part is unused and in its original packaging.

Return procedure for W631GG8MB-15:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

W631GG8MB-15 Tags

  • W631GG8MB-15
  • W631GG8MB-15 PDF
  • W631GG8MB-15 Datasheet
  • W631GG8MB-15 Specifications
  • W631GG8MB-15 Images
  • Winbond Electronics Corporation
  • Winbond Electronics Corporation W631GG8MB-15
  • Buy W631GG8MB-15
  • W631GG8MB-15 Price
  • W631GG8MB-15 Distributor
  • W631GG8MB-15 Supplier
  • W631GG8MB-15 Wholesale
Related Products
M24C02-WMN6TP
M24C02-WMN6TP

STMicroelectronics

AT24C02C-XHM-T
AT24C02C-XHM-T

Microchip Technology

AT21CS01-STUM10-T
AT21CS01-STUM10-T

Microchip Technology

AT24C02C-SSHM-T
AT24C02C-SSHM-T

Microchip Technology

24LC01BT-I/OT
24LC01BT-I/OT

Microchip Technology

M24C02-FMC6TG
M24C02-FMC6TG

STMicroelectronics

AT24CS02-SSHM-T
AT24CS02-SSHM-T

Microchip Technology

93LC46BT-I/OT
93LC46BT-I/OT

Microchip Technology

AT24C04C-SSHM-T
AT24C04C-SSHM-T

Microchip Technology

24LC01BT-I/SN
24LC01BT-I/SN

Microchip Technology

24AA02UIDT-I/OT
24AA02UIDT-I/OT

Microchip Technology

AT24C08C-STUM-T
AT24C08C-STUM-T

Microchip Technology

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER