Winbond Electronics Corporation W631GG8MB15I

Overview

W631GG8MB15I from Winbond is a 1G-bit DDR3 SDRAM organized as 16M × 8 banks × 8 bits, operating at DDR3-1333 speed (9-9-9 timing), with 1.5V VDD/VDDQ supply, industrial temperature range (−40°C to +95°C), and VFBGA-78 package. It serves as main memory in embedded controllers, networking processors, and industrial HMIs requiring reliable, JEDEC-compliant DRAM with on-die termination and ZQ calibration.

For engineers reviewing the W631GG8MB15I datasheet, W631GG8MB15I pinout, W631GG8MB15I application, or W631GG8MB15I equivalent, key selection factors include its DDR3-1333 speed bin, industrial-grade thermal rating, VFBGA-78 mechanical footprint, CAS Latency support (CL=5–10), and compatibility with standard DDR3 memory controllers using SSTL_15 I/O.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks for concurrent access, supporting burst lengths of 8 (BL8) and burst chop 4 (BC4), programmable read burst ordering (interleaved/nibble sequential), and posted CAS with additive latency (AL = 0, CL−1, CL−2). Its DLL aligns DQ/DQS transitions to CK/CK#, enabling precise source-synchronous data capture.

It features asynchronous RESET# for power-up initialization, ZQ calibration for output driver and ODT impedance tuning, dynamic ODT (Rtt_WR) for write-time termination control, and multi-purpose register (MPR) support for system-level timing calibration via write leveling and predefined MPR read patterns.

Key Specifications

Pinout & Package

VFBGA-78 package with 8×10.5 mm² footprint, 1.0 mm thickness, and ball pitch of 0.8 mm. Ball layout supports standard DDR3 address/command/data/strobe routing with dedicated VDD, VDDQ, VSS, and VSSQ planes.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, W631GG8MB15I uniquely combines DDR3-1333 performance, industrial temperature range, 1.5 V operation, and VFBGA-78 compatibility - making it optimal for cost-sensitive, thermally demanding industrial controllers where voltage flexibility or density scaling are secondary to qualification stability.

Availability

W631GG8MB15I is available at Aetrix Electronics and suitable for industrial HMIs, networking processors, medical imaging controllers, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GG8MB15I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W631GG8MB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for embedded systems requiring JEDEC-compliant memory with extended temperature operation, robust power management, and system-level calibration features like write leveling and MPR.

FAQ

What is the maximum operating frequency of the W631GG8MB15I?

The W631GG8MB15I is rated for DDR3-1333 operation, corresponding to a maximum clock frequency of 667 MHz and data transfer rate of 1333 MT/s. Its tCK(AVG) specification supports 1.5 ns minimum clock period at CL=9, and it maintains full AC/DC compliance across −40°C to +95°C without frequency derating. The device does not support higher speed bins such as DDR3-1600 or DDR3-1866.

Does the W631GG8MB15I support on-die termination (ODT)?

Yes, the W631GG8MB15I supports programmable on-die termination (ODT) for DQ, DQS/DQS#, and DM signals. It provides selectable nominal termination values (RTT_NOM) and dynamic write-time termination (Rtt_WR) via mode registers MR1 and MR2. ODT is configured using SSTL_15-compatible impedance levels and calibrated via external ZQ resistor, ensuring signal integrity on high-speed DDR3 buses without external resistors.

What package type and ball count does the W631GG8MB15I use?

The W631GG8MB15I uses a VFBGA-78 package: 8 mm × 10.5 mm body size, 1.0 mm thickness, 0.8 mm ball pitch, and RoHS-compliant lead-free construction. Its 78-ball layout follows JEDEC-standard DDR3 ball mapping, including dedicated VDD/VDDQ/VSS/VSSQ planes, differential clocks (CK/CK#), strobes (DQS/DQS#), and address/command/data groups - enabling direct integration into DDR3-1333 PCB designs.

Can the W631GG8MB15I operate in self-refresh mode at full temperature range?

Yes, the W631GG8MB15I supports normal temperature self-refresh (IDD6 ≤ 10 mA) across its full industrial range of −40°C to +95°C. At temperatures above 85°C, it requires either Manual Self-Refresh with Extended Temperature Range mode (MR2[A6]=0, MR2[A7]=1) or Auto Self-Refresh (ASR) enabled (MR2[A6]=1) to maintain refresh interval compliance (tREFI = 3.9 µS), ensuring data retention without host intervention under thermal stress.

How does write leveling function on the W631GG8MB15I?

Write leveling on the W631GG8MB15I is implemented via DDR3-standard protocol: the memory controller asserts DQS while holding CK stable, and the DRAM samples CK edge timing relative to DQS to determine skew. The W631GG8MB15I reports calibration status through MPR readback, allowing the controller to adjust DQS delay until setup/hold margins meet specification. This feature is mandatory for reliable 1333 MT/s write operation and is supported across all speed grades including W631GG8MB15I.