Winbond Electronics Corporation W631GG8MB15I TR
- Part No.:
- W631GG8MB15I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W631GG8MB15I TR.pdf
- Description:
- IC DRAM 1GBIT PAR 78VFBGA
- Quantity:
- Payment:

- Shipping:

Inventory:2,220
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Product details
Overview
W631GG8MB15I TR from Winbond Electronics is a 1G-bit DDR3 SDRAM organized as 16M × 8 banks × 8 bits, operating at DDR3-1333 speed (9-9-9 CL-tRCD-tRP), with 1.5V VDD/VDDQ supply, industrial temperature range (−40°C to +95°C), and VFBGA78 (8 mm × 10.5 mm) packaging. It serves as main system memory in embedded controllers, network edge devices, and industrial HMIs requiring reliable high-density DRAM with programmable ODT and ZQ calibration.
For engineers reviewing the W631GG8MB15I TR datasheet, W631GG8MB15I TR pinout, W631GG8MB15I TR application, or W631GG8MB15I TR equivalent, key selection considerations include its DDR3-1333 timing compliance, −40°C to +95°C industrial qualification, VFBGA78 ball map, on-die termination (RTT_NOM/RTT_WR), and support for write leveling and MPR-based timing calibration.
Technical Context
This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks, differential CK/CK# clocking, and bi-directional DQS/DQS# strobes aligned to data edges. It supports programmable CAS Latency (CL = 5–10), CAS Write Latency (CWL = 5–7), additive latency (AL = 0, CL−1, CL−2), and posted CAS for command bus efficiency.
Functional features include asynchronous RESET#, ZQ calibration using external 240 Ω resistor, dynamic ODT (Rtt_WR), partial array self-refresh (PASR), auto self-refresh (ASR), and multi-purpose register (MPR) for system-level timing calibration. All control/address inputs are sampled at the CK rising / CK# falling crosspoint.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 G-bit (16M × 8 banks × 8 bits) |
| Data Rate | DDR3-1333 (667 MHz clock, 1333 MT/s) |
| Timing Grade | 9-9-9 (CL-tRCD-tRP), industrial grade |
| Supply Voltage | VDD/VDDQ = 1.5 V ± 0.075 V - matches SSTL_15 I/O standard |
| Operating Temp | −40°C ≤ TCASE ≤ +95°C - qualified per JEDEC JESD22-A104 |
| Package | VFBGA78 (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant lead-free) |
| Interface Standard | SSTL_15 - ensures compatibility with DDR3 memory controllers |
| Refresh Interval | 7.8 µs at 0–85°C; 3.9 µs at 85–95°C - requires ASR or manual self-refresh above 85°C |
Pinout & Package
VFBGA78 package (8 mm × 10.5 mm, 1.0 mm thickness) with 78 solder balls arranged in 9×9 staggered grid (center ball omitted). Ball pitch is 0.8 mm. Compatible with standard DDR3 PCB layout rules including controlled impedance routing and symmetric DQS/DQ fanout.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A12 | Address Inputs | Row/column address during ACT, READ, WRITE, PRE; multiplexed with bank address BA0–BA2 |
| BA0–BA2 | Bank Address | Selects one of eight internal banks; latched with A0–A12 on ACT command |
| CK, CK# | Differential Clock | Edge-triggered command/address sampling at crosspoint; defines all timing windows |
| DQ0–DQ7 | Data I/O | Bi-directional 8-bit data bus; referenced to DQS/DQS# for read/write strobing |
| DQS, DQS# | Differential Strobe | Source-synchronous edge-aligned read data, center-aligned write data; enables precise timing capture |
| DM | Data Mask | Per-byte write mask; active-high, sampled on DQS rising edge during write bursts |
| RESET# | Asynchronous Reset | Active-low initialization signal; initiates power-up sequence and clears internal state |
| ODT | On-Die Termination Control | Dynamic enable/disable of RTT_NOM/RTT_WR; driven by memory controller to match line impedance |
| WE#, RAS#, CAS# | Command Inputs | Standard DDR3 command encoding (e.g., RAS# + CAS# + WE# = PRECHARGE) |
| VDD, VDDQ, VSS | Power/Ground | VDD powers core logic; VDDQ powers I/O; separate planes reduce noise coupling |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CAS Latency | CL = 5–10 - enables optimization for latency vs. bandwidth trade-offs across system clock speeds |
| ZQ Calibration | Uses external 240 Ω resistor to calibrate output driver strength and ODT impedance - maintains signal integrity over voltage/temperature |
| Write Leveling Support | Enables controller-driven DQS-to-CK skew compensation - critical for stable high-speed write setup/hold margins |
| Multi-Purpose Register (MPR) | Outputs predefined bit pattern (0x00000000) for system-level timing margin validation - used with write leveling and read training |
| Dynamic ODT (Rtt_WR) | Switches termination on DQ/DQS during writes only - reduces standby power and improves write eye opening |
| Partial Array Self-Refresh (PASR) | Refreshes only selected banks - cuts self-refresh current up to 50% when full memory array is not active |
Applications
| Industrial HMI Memory | Network Edge Router Buffer |
|---|---|
Use Scenario: Touch-enabled human-machine interface in factory automation panels operating continuously at 70°C ambient. IC Role / Device Role / Timing Role: Primary working memory for ARM Cortex-A9 application processor running Linux-based UI stack. Use Value: Industrial temperature rating (−40°C to +95°C) and PASR mode reduce thermal derating and power consumption during idle display refresh cycles. | Use Scenario: Packet buffering in compact 1U enterprise edge router handling 10 GbE line-rate traffic. IC Role / Device Role / Timing Role: Shared packet buffer between switching fabric and PHY interfaces; accessed via DDR3 memory controller with write leveling enabled. Use Value: DDR3-1333 bandwidth (10.6 GB/s peak) and dynamic ODT ensure clean signal integrity across 12-layer backplane traces with >40 dB crosstalk suppression. |
| Medical Imaging Controller | Automated Test Equipment (ATE) |
Use Scenario: Real-time image reconstruction engine in portable ultrasound device with strict EMI limits. IC Role / Device Role / Timing Role: Frame buffer and algorithm scratchpad for FPGA-accelerated beamforming pipeline. Use Value: SSTL_15 interface and controlled slew rates meet IEC 60601-1 radiated emission requirements without added ferrites or shielding. | Use Scenario: High-precision digital pattern memory in semiconductor wafer prober supporting 1 Gb/s vector rates. IC Role / Device Role / Timing Role: Storage for test vectors and expected response signatures; accessed via deterministic burst reads with tAA = 13.5 ns guarantee. Use Value: Guaranteed 13.5 ns tAA (min) at DDR3-1333 ensures sub-cycle timing predictability for real-time pass/fail decision logic. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K128M8RH-125:E | DDR3L-1600 (1.35 V), 1 G-bit, 78-ball VFBGA, CL=11, tAA = 13.75 ns | Lower voltage operation; requires 1.35 V supply rail; not rated for −40°C to +95°C industrial range | Choose for power-constrained designs where 1.35 V infrastructure exists and extended temperature is not required. |
| IS43TR16128B-125KBL | DDR3-1600 (1.5 V), 2 G-bit (16M × 16), 96-ball FBGA, CL=11, tAA = 13.75 ns | Higher density (2 G-bit), wider 16-bit bus, larger package - incompatible pinout and layout | Choose only if board redesign accommodates 96-ball footprint and system requires 16-bit data path. |
Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, the W631GG8MB15I TR provides guaranteed industrial temperature operation at standard 1.5 V, exact pin compatibility with other Winbond DDR3-1333 VFBGA78 parts, and tighter tAA specification (13.5 ns min) for deterministic low-latency access.
Availability
W631GG8MB15I TR is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, medical imaging controllers, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W631GG8MB15I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and DDR SDRAM for industrial, automotive, and networking markets.
The W631GG8MB series targets cost-sensitive, thermally demanding embedded systems requiring JEDEC-compliant DDR3 performance with industrial-grade reliability and simplified qualification paths.
FAQ
What is the maximum clock frequency supported by the W631GG8MB15I TR?
The W631GG8MB15I TR supports a maximum clock frequency of 667 MHz, enabling DDR3-1333 operation at 1333 MT/s. This is confirmed by its speed grade suffix "15I", JEDEC DDR3-1333 (9-9-9) timing bin, and fCKMAX = 667 MHz in the AC characteristics table. The device maintains full timing compliance across its industrial temperature range (−40°C to +95°C) at this rate.
Does the W631GG8MB15I TR support write leveling and how is it implemented?
Yes, the W631GG8MB15I TR supports write leveling per JEDEC DDR3 specification. It uses the DQS/DQS# strobe pair and internal DLL to allow the memory controller to adjust DQS-to-CK skew during initialization. The W631GG8MB15I TR enters write leveling mode via MR1 bit A11, and the MPR outputs a fixed pattern for margin verification. This capability is explicitly documented in Sections 8.9 and 8.10 of the datasheet.
What package type and ball count does the W631GG8MB15I TR use?
The W631GG8MB15I TR uses a VFBGA78 package: 78-ball very thin fine-pitch ball grid array measuring 8 mm × 10.5 mm with 0.8 mm ball pitch and 1.0 mm maximum height. This is specified in Section 2 (Features) and Section 11 (Package Specification) of the datasheet, and matches the ball configuration shown in Figure 5 and Table 5.
Can the W631GG8MB15I TR operate at temperatures above +85°C?
Yes, the W631GG8MB15I TR is rated for operation from −40°C to +95°C case temperature. At temperatures above +85°C, the device requires either Auto Self-Refresh (ASR) mode (MR2 A6 = 1b) or Manual Self-Refresh with Extended Temperature Range (MR2 A6 = 0b, A7 = 1b) to maintain refresh compliance, as specified in Note 4 of Section 4 (Key Parameters).
What termination options does the W631GG8MB15I TR provide for signal integrity?
The W631GG8MB15I TR provides programmable on-die termination (ODT) with RTT_NOM (nominal) and RTT_WR (dynamic write-time) settings, configurable via MR1 and MR2. It supports synchronous, dynamic, and asynchronous ODT modes, and includes ZQ calibration using an external 240 Ω reference resistor to maintain impedance accuracy across voltage and temperature variations.
W631GG8MB15I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- Parallel
- Clock Frequency:
- 667 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.425V ~ 1.575V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (10.5x8)
W631GG8MB15I TR FAQ
1.How can I place an order for W631GG8MB15I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GG8MB15I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GG8MB15I TR reliable?
The price and inventory of W631GG8MB15I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GG8MB15I TR is usually 5 days.
3.What payment methods are accepted for W631GG8MB15I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GG8MB15I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GG8MB15I TR?
W631GG8MB15I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GG8MB15I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GG8MB15I TR?
For technical support, including W631GG8MB15I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GG8MB15I TR requirements.
6.How does Aetrix verify that W631GG8MB15I TR is sourced from the original manufacturer or authorized distributors?
All W631GG8MB15I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GG8MB15I TR meets industry standards.
7.What is the process for return or replacement of W631GG8MB15I TR?
All W631GG8MB15I TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GG8MB15I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GG8MB15I TR part is unused and in its original packaging.
Return procedure for W631GG8MB15I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GG8MB15I TR Tags

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M24C02-WMN6TP
STMicroelectronics
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STMicroelectronics

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Microchip Technology

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Microchip Technology
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