Winbond Electronics Corporation W631GG8MB-15 TR

Overview

W631GG8MB-15 TR from Winbond Electronics is a 1 Gb (128 MB) DDR3 SDRAM organized as 16M × 8 banks × 8 bits, operating at DDR3-1333 speed (9-9-9 timing), with 1.5 V core/interface supply, SSTL_15 I/O interface, and VFBGA-78 (8 mm × 10.5 mm) package. It supports CAS Latency 5–10, programmable CWL, ZQ calibration, on-die termination (ODT), and asynchronous RESET#-deployed in industrial-grade embedded controllers and networking baseboards requiring reliable high-density memory with JEDEC-compliant power-down and self-refresh.

For engineers reviewing the W631GG8MB-15 TR datasheet, W631GG8MB-15 TR pinout, W631GG8MB-15 TR application, or W631GG8MB-15 TR equivalent, this page delivers verified DDR3-1333 timing parameters (tAA = 13.5 ns, tRCD = 13.5 ns, tRP = 13.5 ns), ODT configuration options (RTT_NOM = 75 Ω, RTT_WR = 120 Ω), burst modes (BL8/BC4), and thermal specifications (0°C to 95°C case temperature) critical for signal integrity validation, PCB layout, and system-level timing closure.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access and bank interleaving. Its differential CK/CK# input synchronizes all command/address latching at the crosspoint, while bi-directional DQS/DQS# strobes edge-align read data and center-align write data relative to the clock.

The device supports full JEDEC DDR3 features including posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, dynamic ODT (Rtt_WR), ZQ calibration using external 240 Ω resistor, and multi-purpose register (MPR) for system-level timing calibration via write leveling. It requires asynchronous RESET# assertion during power-up initialization and supports both precharged and active power-down modes.

Key Specifications

Pinout & Package

VFBGA-78 package with 8×10.5 mm² body, 1.0 mm thickness, and 0.8 mm ball pitch. Ball grid arranged in 6 rows (A–F) × 13 columns (1–13), excluding missing balls at A1, A13, F1, F13 per JEDEC MO-263AC standard.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K128M8RH-125:E and IS43TR16128B-15KBL, the W631GG8MB-15 TR offers direct 1.5 V DDR3 compatibility, identical 78-ball VFBGA footprint, and guaranteed 0°C–95°C operation - simplifying qualification and reducing layout risk in cost-sensitive industrial designs.

Availability

W631GG8MB-15 TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging systems requiring stable component supply, long-term lifecycle assurance, and JEDEC-compliant DDR3-1333 performance.

Supply support for W631GG8MB-15 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W631GG8MB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for applications demanding extended temperature operation, robust power-down modes, and JEDEC-compliant signal integrity in space-constrained embedded systems.

FAQ

What is the maximum operating frequency supported by the W631GG8MB-15 TR?

The W631GG8MB-15 TR is rated for DDR3-1333 operation, corresponding to a maximum clock frequency of 667 MHz and data transfer rate of 1333 MT/s. Its tCK(AVG) specification supports 1.5 ns minimum clock period (667 MHz) with CL=9 and CWL=7, and it does not support higher-speed bins like DDR3-1600 or DDR3-1866.

Does the W631GG8MB-15 TR support automatic self-refresh (ASR) mode?

Yes, the W631GG8MB-15 TR supports Auto Self-Refresh (ASR) mode via MR2 bit A6. When enabled, ASR automatically adjusts refresh rate based on temperature - doubling refresh commands to 32 ms intervals above 85°C. This feature is mandatory for operation up to 95°C case temperature and eliminates software-managed refresh scheduling overhead.

What are the valid ODT resistance values configurable on the W631GG8MB-15 TR?

The W631GG8MB-15 TR supports two ODT configurations: Rtt_NOM = 75 Ω (for read termination) and Rtt_WR = 120 Ω (for write termination), both programmed via MR1 and MR2. These values are calibrated using the ZQ pin and 240 Ω external resistor, ensuring stable 34 Ω driver output impedance and minimizing signal reflections on high-speed DQ/DQS nets.

Can the W631GG8MB-15 TR operate with CAS Latency 7 or 9?

Yes, the W631GG8MB-15 TR supports CL = 5, 6, 7, 8, 9, and 10. CL=9 is required for DDR3-1333 (9-9-9) compliance, while CL=7 is supported as a down-binned option - but only if tAA/tRCD/tRP are set to ≤13.125 ns in SPD and mode registers, and the system controller explicitly supports that configuration.

Is the W631GG8MB-15 TR pin-compatible with other Winbond DDR3 SDRAMs in the same family?

Yes, the W631GG8MB-15 TR shares identical VFBGA-78 pinout and ball assignment with all W631GG8MB speed grades (-09, -11, -12, -15, and industrial variants). This allows hardware reuse across performance tiers - for example, substituting a -15 part for prototyping and upgrading to -09 for production - without PCB changes.