Winbond Electronics Corporation W631GG8NB-09

Overview

W631GG8NB-09 from Winbond Electronics is a 1 Gb (128 MB) DDR3 SDRAM organized as 16M × 8 banks × 8 bits, compliant with JEDEC DDR3-2133 (14-14-14) timing, operating at 1.5 V supply, supporting CAS Latency up to CL=14 and CWL=10, and designed for high-bandwidth memory subsystems in industrial computing and embedded networking equipment.

For engineers reviewing the W631GG8NB-09 datasheet, W631GG8NB-09 pinout, W631GG8NB-09 application, or W631GG8NB-09 equivalent, this page delivers verified DDR3-2133 timing parameters, ball configuration, ODT and ZQ calibration behavior, write leveling support, and thermal-grade validation for 0°C to 95°C case temperature operation.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks, differential CK/CK# clock inputs synchronized at the cross-point, and bi-directional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. It supports programmable additive latency (AL = 0, CL−1, CL−2), posted CAS, and asynchronous RESET# for power-up initialization.

The device integrates on-die termination (ODT) with synchronous and dynamic modes, ZQ calibration using an external 240 Ω resistor, multi-purpose register (MPR) for system-level timing calibration, and partial array self-refresh (PASR) to reduce power during idle bank states.

Key Specifications

Pinout & Package

VFBGA-78 package with 8×10.5 mm² footprint, 1.0 mm thickness, and window-type BGA construction. Ball pitch: 0.8 mm. Compatible with standard DDR3 layout rules and JEDEC MO-275AC mechanical specification.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, the W631GG8NB-09 uniquely delivers DDR3-2133 performance at 1.5 V with full 0–95°C thermal validation, write leveling, and PASR-making it optimal for thermally constrained industrial designs requiring maximum bandwidth per pin.

Availability

W631GG8NB-09 is available at Aetrix Electronics and suitable for industrial PLCs, network switches, medical imaging systems, and video surveillance DVRs requiring stable component supply, long-term lifecycle assurance, and JEDEC-compliant DDR3-2133 performance.

Supply support for W631GG8NB-09 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W631GG8NB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, engineered for reliability in extended-temperature embedded systems where consistent timing, low-power self-refresh, and robust signal integrity are critical.

FAQ

What DDR3 speed bin does W631GG8NB-09 support?

W631GG8NB-09 supports the DDR3-2133 speed bin with 14-14-14 timing (CL=14, tRCD=14, tRP=14), operating at 1066 MHz clock frequency and delivering 2133 MT/s data transfer rate. It is validated for full JEDEC AC/DC specifications across 0°C to 95°C case temperature, with tREFI reduced to 3.9 µS above 85°C to maintain data retention.

Does W631GG8NB-09 support write leveling?

Yes, W631GG8NB-09 supports write leveling per JEDEC DDR3 specification. The feature uses the Multi-Purpose Register (MPR) to output a predefined calibration pattern, allowing the memory controller to adjust per-byte DQS-to-CK delay for optimal write setup/hold margins. This capability is confirmed in Section 8.9 of the official datasheet and requires ZQ calibration before activation.

What is the package type and ball count of W631GG8NB-09?

W631GG8NB-09 uses a VFBGA-78 package: 8 mm × 10.5 mm footprint, 1.0 mm height, 0.8 mm ball pitch, and RoHS-compliant lead-free construction. The 78-ball layout follows JEDEC MO-275AC mechanical standard and includes dedicated balls for CK/CK#, DQS/DQS#, ZQ, RESET#, and ODT control-fully documented in Sections 5 and 6 of the datasheet.

Can W631GG8NB-09 operate at 1.35 V?

No, W631GG8NB-09 is specified only for 1.5 V ± 0.075 V operation (VDD/VDDQ). It is not a DDR3L part and does not guarantee functionality or timing compliance at 1.35 V. Attempting 1.35 V operation may result in failed initialization, timing violations, or data corruption. For DDR3L compatibility, consider Winbond's W632GG8NB series or alternate vendors' DDR3L offerings.

What thermal grade is W631GG8NB-09 qualified for?

W631GG8NB-09 is qualified for 0°C ≤ TCASE ≤ 95°C operation, with full JEDEC AC and DC specifications guaranteed across this range. At 85–95°C, it requires doubled refresh rate (tREFI = 3.9 µS) and supports Manual Self-Refresh or Auto Self-Refresh (ASR) mode via MR2 configuration. It is not rated for -40°C operation-industrial variants use suffixes "I" (e.g., W631GG8NB09I) or "J" (e.g., W631GG8NB09J).