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Winbond Electronics Corporation W631GG8NB09I

Name: W631GG8NB09I
Brand: Winbond Electronics Corporation
SKU: W631GG8NB09I
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W631GG8NB09I

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 78-VFBGA

Datasheet:: W631GG8NB09I.pdf

Description:: IC DRAM 1GBIT SSTL 15 78VFBGA

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Product details

Overview

W631GG8NB09I from Winbond Electronics is a 1 Gb (128 MB) DDR3 SDRAM organized as 16M × 8 banks × 8 bits, operating at DDR3-2133 speed (1066 MHz clock, 14-14-14 CL-tRCD-tRP), with industrial temperature range (−40°C to +95°C), VDD/VDDQ = 1.5 V ± 0.075 V, and SSTL_15 interface - deployed in embedded computing, network edge routers, and industrial HMIs requiring high-bandwidth, low-latency memory buffering.

For engineers reviewing the W631GG8NB09I datasheet, W631GG8NB09I pinout, W631GG8NB09I application, or W631GG8NB09I equivalent, this page delivers verified timing parameters, ball configuration, ODT and ZQ calibration behavior, DLL alignment characteristics, and industrial-grade thermal validation - all confirmed against Winbond's official A01 revision datasheet dated Jan. 07, 2021.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks for concurrent access, supporting programmable CAS Latency (CL = 5–14) and CAS Write Latency (CWL = 5–10). Its differential CK/CK# inputs synchronize all commands on rising edges, while bi-directional DQS/DQS# strobes align read data edge-wise and write data center-wise relative to clock.

The device integrates asynchronous RESET#, on-die termination (ODT) with static and dynamic modes (Rtt_Nom, Rtt_WR), ZQ calibration using external 240 Ω resistor, and Multi-Purpose Register (MPR) support for system-level timing calibration via write leveling - enabling robust signal integrity in high-speed PCB layouts with tight trace length matching.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	1 Gb (128 MB), organized as 16M words × 8 banks × 8 bits - supports 128 MB of byte-addressable storage per chip.
Data Rate	DDR3-2133 (2133 MT/s), f_CKMAX = 1066 MHz - enables 17.06 GB/s peak bandwidth across 64-bit bus.
CAS Latency	Configurable CL = 5 to 14 (supports 14-14-14 at DDR3-2133) - determines minimum tAA delay (13.09 ns min) and impacts read latency (RL = AL + CL).
Supply Voltage	VDD/VDDQ = 1.5 V ± 0.075 V - requires tightly regulated 1.5 V rail with <±5% tolerance for stable operation.
Operating Temp	−40°C ≤ T_CASE ≤ +95°C - qualified for industrial environments without derating or reduced AC specs.
Interface Standard	SSTL_15 - mandates 1.5 V reference voltage and controlled-impedance routing (typically 40–60 Ω) for command/address and data lines.
Package	VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant, lead-free) - requires 0.5 mm pitch BGA layout and reflow profile compatible with JEDEC J-STD-020.

Pinout & Package

VFBGA-78 package with 8×10.5 mm² footprint, 1.0 mm thickness, and window-type construction. Ball pitch is 0.8 mm; balls are arranged in 9 rows (A–J) × 9 columns (1–9), with corner balls A1 and J9 omitted (78 total active balls).

Pin/Terminal	Circuit Role	Design Meaning
A1–A9 (excl. A1)	Address/Command Inputs (A0–A15, BA0–BA2, CKE, CS#, RAS#, CAS#, WE#)	Single-ended SSTL_15 signals; require matched trace lengths and point-to-point topology to controller.
B1–B9, C1–C9	Data I/O (DQ0–DQ7), Data Mask (DM0–DM7), Differential Strobes (DQS0–DQS7, DQS#0–DQS#7)	DQ/DM use SSTL_15; DQS/DQS# are differential pairs - each pair must be length-matched within ±5 mil and routed over solid reference plane.
D1–D9, E1–E9	Power (VDD, VDDQ), Ground (VSS, VSSQ), ODT Control (ODT)	VDD/VDDQ pins require local 100 nF + 10 µF decoupling; ODT pin selects termination resistance during reads/writes per MR1 settings.
F1–F9, G1–G9	Clock (CK, CK#), Reset (RESET#), ZQ Calibration (ZQ)	CK/CK# differential pair must be routed with 100 Ω ±10% impedance and <5 ps skew; ZQ connects to 240 Ω ±1% resistor to ground for driver/ODT calibration.

Key Features

Feature	Design Value
Programmable CWL	CAS Write Latency configurable per frequency (CWL = 5–10), enabling precise write timing alignment independent of CL - critical for burst write reliability at DDR3-2133.
ZQ Calibration	On-chip calibration of output drivers and ODT using external 240 Ω resistor - maintains consistent 34/40/60/120 Ω termination impedances across voltage/temperature drift.
Dynamic ODT (Rtt_WR)	Termination enabled only during write operations via MR2 bit A2, reducing stub reflections and improving write eye margin without affecting read signal integrity.
Write Leveling Support	Hardware-assisted timing calibration mode (entered via MRS) that adjusts DQS launch delay relative to CK to compensate for board skew - required for reliable DDR3-2133 write setup/hold.
Multi-Purpose Register (MPR)	Predefined 128-bit pattern (0x00000000… or 0xFFFFFFFF…) readable via standard READ command - used for system-level DQ/DQS timing margin verification and training.

Applications

Industrial HMI Controllers	Network Edge Routers
Use Scenario: Touch-enabled factory-floor HMIs running Linux-based UIs with real-time graphics rendering and local data logging. IC Role / Device Role / Timing Role: Primary working memory buffer for ARM Cortex-A9/A15 SoCs, handling frame buffer, OS kernel, and application code with DDR3-2133 bandwidth. Use Value: −40°C to +95°C rating ensures uninterrupted operation in unconditioned enclosures; 14-14-14 timing enables sub-14 ns tAA for responsive GUI updates.	Use Scenario: Compact 4-port Gigabit Ethernet switches with integrated packet buffering and QoS processing. IC Role / Device Role / Timing Role: Packet buffer memory for traffic shaping and deep queue management, interfaced to MIPS or ARM-based switch fabric controllers. Use Value: Eight-bank concurrency allows simultaneous packet ingress/egress buffering; dynamic ODT minimizes write jitter under bursty traffic loads.
Medical Imaging Terminals	Automated Test Equipment (ATE)
Use Scenario: Portable ultrasound display units capturing and rendering real-time B-mode image streams at 30 fps. IC Role / Device Role / Timing Role: Frame buffer and DMA staging memory for FPGA-accelerated image pipeline, synchronized to pixel clock via DDR3 controller. Use Value: SSTL_15 interface ensures clean signal integrity at 1066 MHz; write leveling guarantees reliable data capture from ADC FIFOs.	Use Scenario: Modular PXI-based test systems performing high-speed digital pattern generation and acquisition at >200 MHz. IC Role / Device Role / Timing Role: High-throughput pattern memory for vector storage and stimulus replay, accessed by Xilinx Kintex-7 FPGA with hardened DDR3 PHY. Use Value: 128 MB capacity supports multi-Megavector test sequences; 8-bit prefetch and BL8 enable efficient burst transfers aligned to test cycle boundaries.

Industrial HMI Controllers

Network Edge Routers

Use Scenario: Touch-enabled factory-floor HMIs running Linux-based UIs with real-time graphics rendering and local data logging.

IC Role / Device Role / Timing Role: Primary working memory buffer for ARM Cortex-A9/A15 SoCs, handling frame buffer, OS kernel, and application code with DDR3-2133 bandwidth.

Use Value: −40°C to +95°C rating ensures uninterrupted operation in unconditioned enclosures; 14-14-14 timing enables sub-14 ns tAA for responsive GUI updates.

Use Scenario: Compact 4-port Gigabit Ethernet switches with integrated packet buffering and QoS processing.

IC Role / Device Role / Timing Role: Packet buffer memory for traffic shaping and deep queue management, interfaced to MIPS or ARM-based switch fabric controllers.

Use Value: Eight-bank concurrency allows simultaneous packet ingress/egress buffering; dynamic ODT minimizes write jitter under bursty traffic loads.

Medical Imaging Terminals

Automated Test Equipment (ATE)

Use Scenario: Portable ultrasound display units capturing and rendering real-time B-mode image streams at 30 fps.

IC Role / Device Role / Timing Role: Frame buffer and DMA staging memory for FPGA-accelerated image pipeline, synchronized to pixel clock via DDR3 controller.

Use Value: SSTL_15 interface ensures clean signal integrity at 1066 MHz; write leveling guarantees reliable data capture from ADC FIFOs.

Use Scenario: Modular PXI-based test systems performing high-speed digital pattern generation and acquisition at >200 MHz.

IC Role / Device Role / Timing Role: High-throughput pattern memory for vector storage and stimulus replay, accessed by Xilinx Kintex-7 FPGA with hardened DDR3 PHY.

Use Value: 128 MB capacity supports multi-Megavector test sequences; 8-bit prefetch and BL8 enable efficient burst transfers aligned to test cycle boundaries.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IS43TR16128B-2BLI	16-bit x 64M organization (128 MB), same DDR3-2133 speed grade, but 96-ball FBGA (vs. 78-ball); supports CL=11 only at 1066 MHz.	Requires wider data bus (x16 vs. x8), limiting compatibility with x8-only controllers; higher pin count increases PCB layer count.	Select when x16 interface and larger single-chip density are needed; verify controller supports x16 mode and 96-ball layout constraints.
MT41K128M8RH-125:E	Micron part with identical 128 MB x8 density and DDR3L-1866 (933 MHz) speed; operates at 1.35 V only - not 1.5 V compatible.	Lower voltage reduces power but mandates separate 1.35 V rail; lacks industrial −40°C to +95°C rating (only commercial 0°C to +95°C).	Choose for power-sensitive battery-backed systems where 1.35 V supply exists; avoid in industrial thermal environments requiring full −40°C startup.

Compared with IS43TR16128B-2BLI and MT41K128M8RH-125:E, the W631GG8NB09I provides native x8 interface in compact 78-ball VFBGA, full 1.5 V compatibility, and guaranteed industrial temperature operation - making it optimal for space-constrained, thermally demanding embedded designs without voltage rail redesign.

Availability

W631GG8NB09I is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, medical imaging terminals, automated test equipment, and embedded vision systems requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GG8NB09I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W631GG8NB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for embedded systems requiring extended temperature operation, JEDEC-compliant reliability, and drop-in compatibility with legacy DDR3 controllers.

FAQ

What is the maximum clock frequency supported by W631GG8NB09I?

W631GG8NB09I supports a maximum clock frequency of 1066 MHz, enabling DDR3-2133 data rates (2133 MT/s). This is validated under industrial temperature conditions (−40°C to +95°C) with CL = 14, tRCD = 14, and tRP = 14 timing parameters. The device achieves this performance using SSTL_15 signaling and differential CK/CK# inputs synchronized to controller clocks.

Does W631GG8NB09I support write leveling, and how is it implemented?

Yes, W631GG8NB09I supports hardware-assisted write leveling per JEDEC DDR3 specification. It is entered via Mode Register Set (MRS) command with MR0 A12 = 1, enabling DQS phase adjustment relative to CK. The W631GG8NB09I uses its internal DLL to dynamically shift DQS launch timing during calibration, allowing system-level compensation for board-level flight time mismatches between CK and DQS signals.

What termination resistances are supported by W631GG8NB09I's on-die termination (ODT)?

W631GG8NB09I supports four static ODT values (Rtt_Nom): 120 Ω, 60 Ω, 40 Ω, and 34 Ω, selected via MR1 bits A9–A7. It also supports dynamic ODT (Rtt_WR) with 120 Ω or 60 Ω during writes, configured via MR2 bit A2. All values are calibrated using the external 240 Ω ZQ resistor and remain stable across voltage and temperature variations.

Can W631GG8NB09I operate at 1.35 V instead of 1.5 V?

No, W631GG8NB09I is specified exclusively for 1.5 V ± 0.075 V operation (VDD and VDDQ). It is not DDR3L-compatible and does not guarantee functionality or timing compliance at 1.35 V. Using 1.35 V may result in failed initialization, timing violations, or intermittent data corruption. For DDR3L applications, consider Winbond's W631GG8NB-125 series or alternate vendors' DDR3L-1600 parts.

What is the purpose of the Multi-Purpose Register (MPR) in W631GG8NB09I?

The MPR in W631GG8NB09I stores a fixed 128-bit pattern (all 0s or all 1s) readable via standard READ commands. It is used for system-level timing margin testing - by comparing received MPR data against expected values, designers verify DQ/DQS timing alignment, signal integrity, and eye opening at DDR3-2133 speeds without requiring external pattern generators.

W631GG8NB09I Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 78-VFBGA

Packaging:: Tray

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - DDR3

Memory Size:: 1Gbit

Memory Organization:: 128M x 8

Memory Interface:: SSTL_15

Clock Frequency:: 1.066 GHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: 20 ns

Voltage - Supply:: 1.425V ~ 1.575V

Operating Temperature:: -40°C ~ 95°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 78-VFBGA (8x10.5)

W631GG8NB09I FAQ

1.How can I place an order for W631GG8NB09I through Aetrix?

Please submit a Request for Quotation (RFQ) for W631GG8NB09I on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W631GG8NB09I reliable?

The price and inventory of W631GG8NB09I are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GG8NB09I is usually 5 days.

3.What payment methods are accepted for W631GG8NB09I?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GG8NB09I transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W631GG8NB09I?

W631GG8NB09I orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W631GG8NB09I order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W631GG8NB09I?

For technical support, including W631GG8NB09I datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GG8NB09I requirements.

6.How does Aetrix verify that W631GG8NB09I is sourced from the original manufacturer or authorized distributors?

All W631GG8NB09I products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GG8NB09I meets industry standards.

7.What is the process for return or replacement of W631GG8NB09I?

All W631GG8NB09I units undergo pre-shipment inspection (PSI). If there is an issue with W631GG8NB09I, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W631GG8NB09I part is unused and in its original packaging.

Return procedure for W631GG8NB09I:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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