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Winbond Electronics Corporation W631GG8NB09I TR
- Part No.:
- W631GG8NB09I TR
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W631GG8NB09I TR.pdf
- Description:
- IC DRAM 1GBIT SSTL 15 78VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,000
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Product details
Overview
W631GG8NB09I TR from Winbond Electronics is a 1 Gb (128 MB) DDR3 SDRAM organized as 16M × 8 banks × 8 bits, supporting DDR3-2133 (14-14-14) operation at up to 1066 MHz clock frequency with CAS Latency 14, VDD/VDDQ = 1.5 V ± 75 mV, and industrial temperature range (–40°C to +95°C). It serves as main system memory in embedded controllers, networking processors, and industrial HMIs requiring high-bandwidth, low-latency data buffering.
For engineers reviewing the W631GG8NB09I TR datasheet, W631GG8NB09I TR pinout, W631GG8NB09I TR application, or W631GG8NB09I TR equivalent, key selection considerations include its VFBGA-78 package, SSTL_15 interface compliance, programmable CWL/AL/ODT, ZQ calibration support, and industrial-grade thermal reliability for sustained operation in fanless edge devices.
Technical Context
This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-aligned DQ/DQS timing, and source-synchronous differential strobe (DQS/DQS#) I/O synchronized to CK/CK#. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, and burst lengths of 8 (BL8) or 4 (BC4) selectable on-the-fly.
Functional operation relies on mode register programming (MR0–MR3) for CAS Latency, CWL, ODT settings, PASR, ASR, and MPR readout. Initialization requires asynchronous RESET# assertion followed by stable power-up sequence and ZQ calibration; write leveling and MPR patterns enable system-level timing calibration for robust signal integrity across PCB trace variations.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gb (128 MB), organized as 16M × 8 banks × 8 bits - defines usable capacity and bank-level parallelism for interleaved access. |
| Data Rate | DDR3-2133 (2133 MT/s), fCKMAX = 1066 MHz - enables high-throughput memory bandwidth in CPU/FPGA host interfaces. |
| CAS Latency | CL = 14 (at DDR3-2133) - sets minimum read command-to-data delay; configurable down to CL = 5 for lower-speed operation. |
| Supply Voltage | VDD/VDDQ = 1.5 V ± 0.075 V - mandates tight regulation; compatible with standard DDR3 power delivery networks. |
| Operating Temp | –40°C ≤ TCASE ≤ +95°C - qualified for industrial environments without forced cooling or derating. |
| Package | VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant, lead-free) - surface-mount footprint optimized for space-constrained PCBs. |
| Interface Standard | SSTL_15 - ensures signal integrity compatibility with JEDEC-compliant DDR3 controllers and termination schemes. |
| Refresh Interval | tREFI = 7.8 µs (0–85°C), 3.9 µs (85–95°C) - requires doubled refresh rate at extended temperature; supported via ASR or manual self-refresh. |
Pinout & Package
VFBGA-78 package (8 mm × 10.5 mm, 1.0 mm thickness, window-type BGA) with 78 solder balls arranged in 8 rows × 10 columns (2 missing balls at corners per JEDEC MO-245). Ball pitch is 0.8 mm. RoHS-compliant, lead-free construction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A13 | Address Inputs | Row/column address bits; A12/A13 used for bank select in 8-bank mode. |
| BA0–BA2 | Bank Address | Selects one of eight internal banks for concurrent activation. |
| CK / CK# | Differential Clock | Edge-triggered command/address latching at cross-point; defines all timing windows. |
| DQ0–DQ7 | Data I/O | 8-bit bidirectional data bus; source-synchronous with DQS/DQS# during reads/writes. |
| DQS / DQS# | Differential Strobe | Edge-aligned with read data, center-aligned with write data; enables precise capture timing. |
| DM0–DM7 | Data Mask | Per-byte write mask; suppresses corresponding DQ bits during burst writes. |
| RESET# | Asynchronous Reset | Active-low initialization trigger; required for power-up sequence and recovery from undefined states. |
| ODT | On-Die Termination Control | Dynamic or synchronous ODT enable; configures RTT values (60 Ω, 120 Ω, 40 Ω) for DQ/DQS/DM lines. |
| ZQ | ZQ Calibration Reference | Connects to external 240 Ω ±1% resistor to ground; calibrates output driver strength and ODT impedance. |
| VDD / VDDQ | Power Supplies | Core (1.5 V) and I/O (1.5 V) supplies; separate decoupling required per JEDEC DDR3 layout guidelines. |
| VSS | GND | Signal and power ground planes must be contiguous; ball mapping includes dedicated ground balls for noise reduction. |
Key Features
| Feature | Design Value |
|---|---|
| Programmable CWL | CAS Write Latency configurable per frequency (CWL = 5–10), enabling optimal tWL alignment for write timing closure. |
| ZQ Calibration | One-time or periodic calibration using external 240 Ω resistor ensures ±10% output driver and ODT impedance accuracy over voltage/temperature. |
| Dynamic ODT (Rtt_WR) | Termination enabled only during write bursts on DQ/DQS/DM lines, reducing standby power and improving write signal integrity. |
| Multi-Purpose Register (MPR) | Predefined 128-bit pattern readout supports system-level timing margin verification without external pattern generator. |
| Write Leveling | Per-lane DQS delay adjustment via MRS commands compensates for board skew, enabling reliable DDR3-2133 operation on dense layouts. |
| Partial Array Self Refresh (PASR) | Reduces self-refresh current by refreshing only active banks, cutting IDD6 by up to 40% in partial-memory-workload applications. |
Applications
| Industrial HMI Memory Buffer | Networking Processor Main Memory |
|---|---|
Use Scenario: Fanless human-machine interface panel with ARM Cortex-A9 SoC running Linux GUI stack and real-time PLC logic. IC Role / Device Role / Timing Role: Primary system memory providing low-latency access to framebuffer, application code, and control state variables. Use Value: W631GG8NB09I TR's –40°C to +95°C rating eliminates thermal throttling; DDR3-2133 bandwidth sustains 1080p video overlay and multi-threaded UI rendering without frame drops. | Use Scenario: Layer-3 Ethernet switch ASIC requiring high-throughput packet buffering and table lookups. IC Role / Device Role / Timing Role: Shared packet buffer memory accessed concurrently by ingress/egress engines and management CPU. Use Value: Eight internal banks and BL8 bursting allow overlapping read/write operations across traffic flows; dynamic ODT minimizes signal reflections on 10+ layer backplanes. |
| Medical Imaging Data Cache | Automated Test Equipment (ATE) FIFO |
Use Scenario: Portable ultrasound device capturing raw RF echo data at 120 MSPS before beamforming. IC Role / Device Role / Timing Role: High-speed circular buffer staging raw sensor data prior to FPGA-based processing. Use Value: W631GG8NB09I TR's 1066 MHz clock and CL14 deliver 17 GB/s peak bandwidth; write leveling ensures deterministic setup/hold margins despite variable trace lengths. | Use Scenario: Modular ATE platform performing parallel parametric testing of mixed-signal ICs with real-time pass/fail analysis. IC Role / Device Role / Timing Role: Dual-port FIFO buffer between high-speed digitizer and host controller, absorbing jitter and burst mismatches. Use Value: Auto-precharge and bank interleaving reduce average access latency to <15 ns; PASR cuts self-refresh current during idle test sequences, extending battery life. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IS43TR16128B-125KBL | 1 Gb DDR3L (1.35 V), 96-ball FBGA, CL11 at DDR3-1866, no PASR or MPR | Lower voltage reduces power but lacks industrial temp grade and advanced calibration features | Choose for cost-sensitive consumer designs where 1.35 V supply exists and extended temperature is not required |
| MT41K128M8RH-125:E | 1 Gb DDR3L, 78-ball FBGA, CL11 at DDR3-1866, supports ASR/PASR but no write leveling or MPR | Same package footprint but limited calibration capability; JEDEC-compliant but less suited for marginal signal integrity layouts | Choose when migrating from Micron platforms and full DDR3-2133 speed is unnecessary |
Compared with IS43TR16128B-125KBL and MT41K128M8RH-125:E, W631GG8NB09I TR uniquely combines DDR3-2133 speed, industrial temperature range, write leveling, MPR, and PASR in a 78-ball VFBGA - making it optimal for thermally constrained, high-reliability edge systems demanding both performance and calibration robustness.
Availability
W631GG8NB09I TR is available at Aetrix Electronics and suitable for industrial HMIs, networking processors, medical imaging subsystems, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for W631GG8NB09I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
W631GG8NB09I TR belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for high-reliability embedded systems operating under wide temperature swings and stringent signal integrity requirements.
FAQ
What is the maximum data rate supported by the W631GG8NB09I TR?
The W631GG8NB09I TR supports DDR3-2133 operation at 2133 MT/s, corresponding to a 1066 MHz differential clock frequency. This is validated for the -09I speed grade across the full industrial temperature range (–40°C to +95°C) with CL = 14, tAA = 13.09 ns, and tRCD/tRP = 14 cycles. Operation at lower data rates (e.g., DDR3-1866 or DDR3-1600) is also supported via mode register configuration.
Does the W631GG8NB09I TR require external termination resistors?
No, the W631GG8NB09I TR integrates programmable on-die termination (ODT) for DQ, DQS/DQS#, and DM signals, eliminating the need for external parallel termination. ODT values (60 Ω, 120 Ω, 40 Ω) are selected via MR1/MR2, and dynamic ODT (Rtt_WR) can be enabled during write operations. An external 240 Ω ±1% resistor on the ZQ pin is required solely for factory and runtime calibration of driver/ODT impedance.
How does the W631GG8NB09I TR handle temperature-induced refresh rate changes?
The W631GG8NB09I TR automatically doubles refresh frequency (tREFI = 3.9 µs) when case temperature exceeds 85°C, meeting JEDEC requirements for extended temperature operation up to +95°C. This is implemented via Auto Self-Refresh (ASR) mode (MR2[7:6] = 10b) or Manual Self-Refresh with Extended Temperature Range (MR2[7:6] = 01b), both requiring proper mode register programming during initialization.
Can the W631GG8NB09I TR be used as a drop-in replacement for standard DDR3-2133 modules?
No - the W631GG8NB09I TR is a discrete 78-ball VFBGA SDRAM component, not a module. It requires direct integration onto the host PCB with a compatible DDR3 controller, proper termination, and layout adherence to JEDEC DDR3 guidelines. It is not electrically or mechanically interchangeable with UDIMM/SO-DIMM form factors.
What calibration features does the W631GG8NB09I TR provide for high-speed layout validation?
The W631GG8NB09I TR provides three hardware-assisted calibration features: (1) ZQ calibration for output driver and ODT impedance tuning, (2) write leveling for per-lane DQS delay adjustment to compensate for board skew, and (3) Multi-Purpose Register (MPR) readout of a fixed 128-bit pattern to verify timing margins. These features are essential for achieving stable DDR3-2133 operation on complex, high-layer-count PCBs.
W631GG8NB09I TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- SSTL_15
- Clock Frequency:
- 1.066 GHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.425V ~ 1.575V
- Operating Temperature:
- -40°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (8x10.5)
W631GG8NB09I TR FAQ
1.How can I place an order for W631GG8NB09I TR through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GG8NB09I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GG8NB09I TR reliable?
The price and inventory of W631GG8NB09I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GG8NB09I TR is usually 5 days.
3.What payment methods are accepted for W631GG8NB09I TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GG8NB09I TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GG8NB09I TR?
W631GG8NB09I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GG8NB09I TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GG8NB09I TR?
For technical support, including W631GG8NB09I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GG8NB09I TR requirements.
6.How does Aetrix verify that W631GG8NB09I TR is sourced from the original manufacturer or authorized distributors?
All W631GG8NB09I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GG8NB09I TR meets industry standards.
7.What is the process for return or replacement of W631GG8NB09I TR?
All W631GG8NB09I TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GG8NB09I TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GG8NB09I TR part is unused and in its original packaging.
Return procedure for W631GG8NB09I TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GG8NB09I TR Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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