Winbond Electronics Corporation W631GG8NB-09 TR

Overview

W631GG8NB-09 TR from Winbond is a 1 Gb (128 MB) DDR3 SDRAM organized as 16M × 8 banks × 8 bits, supporting DDR3-2133 (1066 MHz clock, 14-14-14 CL-tRCD-tRP), 1.5 V core/interface supply, SSTL_15 I/O standard, and VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height) packaging. It delivers high-bandwidth memory for embedded computing, industrial controllers, and network edge devices requiring stable JEDEC-compliant operation up to 95°C case temperature.

For engineers reviewing the W631GG8NB-09 TR datasheet, W631GG8NB-09 TR pinout, W631GG8NB-09 TR application, or W631GG8NB-09 TR equivalent, key selection considerations include DDR3-2133 timing compliance, on-die termination (ODT) programmability, ZQ calibration support, write leveling capability, and industrial-grade thermal margin with asynchronous RESET#.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-aligned DQ/DQS timing, and source-synchronous differential strobe (DQS/DQS#) I/O synchronized to CK/CK#. It supports posted CAS#, programmable additive latency (AL = 0, CL−1, CL−2), and dynamic ODT for signal integrity optimization during write bursts.

Functional modes include auto-precharge, burst refresh, partial array self-refresh (PASR), and dual power-down states (active and precharged). Initialization requires asynchronous RESET# assertion followed by stable power and mode register programming (MR0–MR3) for CAS latency, CWL, ODT settings, and temperature-compensated self-refresh (ASR) at extended temperatures.

Key Specifications

Pinout & Package

VFBGA-78 package with 8×10.5 mm² footprint, 1.0 mm thickness, and ball pitch of 0.8 mm. Ball layout follows JEDEC MO-273B standard for DDR3 SDRAM.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, the W631GG8NB-09 TR uniquely delivers DDR3-2133 performance in a standard 8-bit x78-ball footprint at 1.5 V, enabling direct upgrade paths from DDR3-1600 while maintaining legacy PCB compatibility and thermal headroom up to 95°C.

Availability

W631GG8NB-09 TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging systems requiring stable component supply with guaranteed long-term availability and consistent parametric performance across production lots.

Supply support for W631GG8NB-09 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, PSRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W631GG8NB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for applications demanding extended temperature operation, JEDEC compliance, and robust signal integrity features like write leveling and ZQ calibration.

FAQ

What is the maximum data rate supported by the W631GG8NB-09 TR?

The W631GG8NB-09 TR supports DDR3-2133 operation, delivering 2133 megatransfers per second with a 1066 MHz clock frequency and 14-14-14 timing (CL-tRCD-tRP). This is validated under 0°C ≤ T_CASE ≤ 95°C with VDD/VDDQ = 1.5 V ± 75 mV and SSTL_15 I/O conditions as specified in the official Winbond datasheet revision A01.

Does the W631GG8NB-09 TR support write leveling?

Yes, the W631GG8NB-09 TR fully supports write leveling as defined in JEDEC JESD79-3F. The feature uses the DQS strobe and internal DLL to calibrate timing alignment between DQS and CK, and is initiated via MRS commands to MR1. This capability is essential for achieving timing closure on high-speed DDR3 interfaces and is explicitly documented in Section 8.9 of the W631GG8NB datasheet.

What package type and dimensions does the W631GG8NB-09 TR use?

The W631GG8NB-09 TR uses a VFBGA-78 package measuring 8 mm × 10.5 mm with 0.8 mm ball pitch and 1.0 mm maximum height. It complies with JEDEC MO-273B and is lead-free/RoHS-compliant. Package mechanical details, including solder paste stencil recommendations and reflow profiles, are provided in Section 11 of the Winbond W631GG8NB datasheet.

Can the W631GG8NB-09 TR operate at extended temperature ranges beyond 85°C?

Yes - the W631GG8NB-09 TR is rated for 0°C ≤ T_CASE ≤ 95°C. At temperatures above 85°C, it requires either Manual Self-Refresh (MSR) with MR2[7:6] = 0b10 or Auto Self-Refresh (ASR) enabled (MR2[7:6] = 0b11) to maintain t_REFI = 3.9 µS, doubling refresh rate to ensure data retention. This behavior is confirmed in Section 4 Key Parameters and Section 8.16 of the datasheet.

How is on-die termination (ODT) configured on the W631GG8NB-09 TR?

ODT on the W631GG8NB-09 TR is configured via MR1 and MR2 registers, supporting fixed (RTT_NOM, RTT_WR) and dynamic (Rtt_WR) modes. Valid termination values include 75 Ω, 150 Ω, and 50 Ω (depending on mode), and are calibrated using the external 240 Ω ZQ resistor. Configuration details, truth tables, and timing diagrams are specified in Sections 8.19 and 10.9 of the official datasheet.