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Winbond Electronics Corporation W631GG8NB-11
- Part No.:
- W631GG8NB-11
- Manufacturer:
- Winbond Electronics Corporation
- Category:
- Memory
- Package:
- 78-VFBGA
- Datasheet:
-
W631GG8NB-11.pdf
- Description:
- IC DRAM 1GBIT SSTL 15 78VFBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,273
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Product details
Overview
W631GG8NB-11 from Winbond Electronics is a 1 Gb (128 MB) DDR3 SDRAM organized as 16M × 8 banks × 8 bits, compliant with DDR3-1866 (13-13-13) timing, operating at 1.5 V supply, and rated for 0°C to 95°C case temperature. It supports programmable CAS Latency (CL = 5–13), CAS Write Latency (CWL = 5–9), on-die termination (ODT), ZQ calibration, and asynchronous reset - deployed in embedded computing, industrial controllers, and network infrastructure memory subsystems.
For engineers reviewing the W631GG8NB-11 datasheet, W631GG8NB-11 pinout, W631GG8NB-11 application, or W631GG8NB-11 equivalent, key selection criteria include DDR3-1866 speed bin compliance, VFBGA-78 package compatibility, SSTL_15 interface signaling, CL/CWL programmability, and industrial-grade thermal support up to 95°C.
Technical Context
This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, differential CK/CK# clocking synchronized at the cross-point, and source-synchronous DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. DLL alignment ensures precise DQ-DQS-clock timing coordination across process, voltage, and temperature variations.
It supports full JEDEC DDR3 features including posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, burst chop (BC4) and burst length 8 (BL8) modes, multi-purpose register (MPR) for system-level timing calibration, write leveling, dynamic ODT (Rtt_WR), and partial array self-refresh (PASR) for power optimization in memory-constrained systems.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Density | 1 Gb (128 MB), organized as 16M words × 8 banks × 8 bits - enables compact 128 MB memory modules without stacking. |
| Data Rate | DDR3-1866 (13-13-13), fCKMAX = 933 MHz - delivers 1.866 GT/s transfer rate per pin with tAA ≤ 13.91 ns. |
| Supply Voltage | VDD/VDDQ = 1.5 V ± 0.075 V - requires tight regulation; compatible with standard DDR3 LDOs and PMICs. |
| CAS Latency Range | CL = 5, 6, 7, 8, 9, 10, 11, 13 - supports flexible timing tuning for latency-sensitive vs. bandwidth-optimized designs. |
| CAS Write Latency | CWL = 5–9, programmable per frequency - ensures write timing integrity across speed bins and board trace lengths. |
| Operating Temp | 0°C ≤ TCASE ≤ 95°C - validated for extended industrial environments without derating. |
| Interface Standard | SSTL_15 - mandates 1.5 V reference termination and compatible driver/receiver design for signal integrity. |
| Package | VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant lead-free) - surface-mount compatible with standard reflow profiles. |
Pinout & Package
VFBGA-78 package (8 mm × 10.5 mm, 1.0 mm thickness, window-type BGA) with 78 solder balls arranged in 8 rows × 10 columns (with 2 missing balls at A1/B1), using lead-free, RoHS-compliant materials. Ball pitch is 0.8 mm.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1, B1 | No Connect | Reserved; must be left unconnected per datasheet - no routing or thermal pad required. |
| A2–A10, B2–B10, C1–C10, D1–D10, E1–E10, F1–F10, G1–G10, H1–H10 | Address/Command/Data/Strobe | Ball mapping includes A0–A14, BA0–BA2, RAS#, CAS#, WE#, CKE, CS#, DQ0–DQ7, DQS/DQS#, DM, VDD, VDDQ, VSS, VSSQ, ZQ, RESET# - full DDR3 functional coverage. |
| G8, H8 | DQS / DQS# | Differential data strobe pair - source-synchronous timing reference for all DQ transfers; requires matched trace length and controlled impedance (±5% tolerance). |
| F7, G7 | CK / CK# | Differential clock inputs - latching occurs at cross-point; requires 100 Ω differential termination and strict skew control (< 25 ps). |
| H10 | RESET# | Asynchronous active-low reset - initiates power-up initialization sequence and clears internal state without clock dependency. |
Key Features
| Feature | Design Value |
|---|---|
| Programmable ODT | Configurable RTT_NOM (60/120/240 Ω) and RTT_WR (60/120 Ω) via MR1/MR2 - enables dynamic impedance matching during reads/writes to suppress reflections. |
| ZQ Calibration | One-time or periodic calibration using external 240 Ω ±1% resistor to ground - corrects output driver and ODT impedance drift over PVT. |
| Write Leveling | Hardware-assisted training mode (MR1 A10 = 1) aligns DQS launch timing to CK - essential for reliable capture of write data at high speeds (≥ DDR3-1600). |
| Multi-Purpose Register (MPR) | Predefined 128-bit pattern readout (0x00000000… or 0xFFFFFFFF…) - used for system-level eye-diagram margining and timing validation. |
| Partial Array Self-Refresh (PASR) | Selective refresh of ¼, ½, or full array via MR2 - reduces self-refresh current by up to 75% when only subset of memory is active. |
| Dynamic ODT | Rtt_WR activated only during WRITE bursts - eliminates unnecessary termination loading on DQ/DQS during reads, improving signal fidelity and power efficiency. |
Applications
| Industrial PLC Memory Buffer | Network Switch Packet Buffer |
|---|---|
Use Scenario: Real-time I/O scanning and logic execution in programmable logic controllers requiring deterministic memory access under temperature cycling. IC Role / Device Role / Timing Role: Primary working memory storing ladder logic variables, I/O image tables, and firmware stacks - accessed via ARM Cortex-M7 or RISC-V SoC DDR3 controller. Use Value: DDR3-1866 bandwidth sustains >1.4 GB/s aggregate throughput for multi-axis motion control loops; 0°C–95°C rating avoids thermal throttling in enclosed cabinets. | Use Scenario: Temporary storage of ingress/egress Ethernet frames in Layer 2/L3 managed switches before forwarding or classification. IC Role / Device Role / Timing Role: High-bandwidth packet buffer interfaced to switch fabric ASIC - operates in burst-intensive READ/WRITE patterns with low-latency random access. Use Value: 13-13-13 timing and programmable CL/CWL allow fine-grained tuning to match ASIC controller timing margins; VFBGA-78 footprint fits dense PCB layouts. |
| Medical Imaging Control Board | Video Surveillance DVR Memory |
Use Scenario: Storing real-time sensor fusion data and UI rendering buffers in portable ultrasound or MRI console boards with space and thermal constraints. IC Role / Device Role / Timing Role: Dual-role memory supporting both CPU instruction/data fetch and DMA-based image frame buffering - accessed concurrently by ARM A-class processor and video codec engine. Use Value: PASR and dynamic ODT reduce active/idle power consumption by ~30% versus fixed-termination DDR3; 1.5 V operation lowers thermal load near sensitive analog front-ends. | Use Scenario: Frame buffering for multi-channel H.265 encode/decode pipelines in embedded digital video recorders handling 8+ camera streams. IC Role / Device Role / Timing Role: Shared memory pool for encoder input buffers, decoder output buffers, and OS runtime - subject to sustained 80%+ bus utilization during peak recording. Use Value: BL8 + interleaved burst ordering maximizes sequential bandwidth; write leveling ensures robustness across varying trace lengths between SoC and memory. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar DDR3 SDRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MT41K128M8RH-125:E | 1 Gb DDR3L (1.35 V), -125 speed grade (DDR3-1600), 96-ball FBGA - lower voltage, slower max speed, larger package. | Targets ultra-low-power embedded systems where 1.35 V operation and reduced thermal output are prioritized over 1866 MT/s bandwidth. | Select if system uses DDR3L-compatible power delivery and does not require DDR3-1866 performance; verify VDDQ compatibility and timing margin at 800 MHz. |
| IS43TR16128B-125KBL | 2 Gb (16-bit) DDR3, -125 speed grade (DDR3-1600), 96-ball FBGA - double density, wider bus, same speed bin, different organization. | Used where higher capacity per chip or x16 interface simplifies routing (e.g., dual-rank modules); not drop-in for x8 designs due to pinout and width mismatch. | Choose only when redesigning for x16 interface or needing ≥256 MB per chip; requires PCB layout change and controller configuration update. |
Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, W631GG8NB-11 provides optimal balance of DDR3-1866 speed, x8 interface simplicity, industrial temperature range, and VFBGA-78 footprint - making it preferred for cost- and space-constrained 128 MB memory subsystems requiring 1.5 V compatibility and JEDEC-standard timing behavior.
Availability
W631GG8NB-11 is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging systems requiring stable component supply, long-term lifecycle assurance, and consistent electrical performance across production batches.
Supply support for W631GG8NB-11 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.
The W631GG8NB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for applications demanding extended temperature operation, JEDEC compliance, and robust signal integrity in electrically noisy environments.
FAQ
What is the maximum supported CAS Latency for W631GG8NB-11?
W631GG8NB-11 supports CAS Latency settings of CL = 5, 6, 7, 8, 9, 10, 11, and 13. CL = 14 is not supported in the -11 speed grade. These values are programmable via Mode Register MR0 and must be selected in conjunction with the operating frequency and tAA/tRCD/tRP timing constraints defined in the DDR3-1866 specification. The W631GG8NB-11 datasheet confirms CL = 13 is valid at 933 MHz with tAA ≤ 13.91 ns.
Does W631GG8NB-11 support dynamic on-die termination (Rtt_WR)?
Yes, W631GG8NB-11 supports dynamic ODT (Rtt_WR) as defined in MR2. It allows programmable termination impedance (60 Ω or 120 Ω) on DQ/DQS pins exclusively during WRITE operations, reducing signal distortion and crosstalk while minimizing power draw during READ cycles. This feature is enabled via MR2 bit A2 (Rtt_WR) and requires proper command sequencing per JEDEC DDR3 specification.
What package type and ball count does W631GG8NB-11 use?
W631GG8NB-11 uses a VFBGA-78 package: 8 mm × 10.5 mm body size, 1.0 mm thickness, 0.8 mm ball pitch, with 78 solder balls arranged in an 8×10 grid (two positions - A1 and B1 - are no-connect). This window-type BGA is RoHS-compliant and lead-free, qualified for standard Pb-free reflow profiles per J-STD-020.
Can W631GG8NB-11 operate at 1.35 V instead of 1.5 V?
No, W631GG8NB-11 is specified only for VDD/VDDQ = 1.5 V ± 0.075 V and is not rated for DDR3L (1.35 V) operation. Applying 1.35 V may result in timing violations, initialization failure, or data corruption. For 1.35 V compatibility, Winbond offers separate DDR3L parts such as W631GG8NB-125L, which are distinct orderables with different speed grades and qualification.
Is write leveling supported on W631GG8NB-11, and how is it enabled?
Yes, W631GG8NB-11 supports hardware-assisted write leveling per JEDEC DDR3 spec. It is enabled by setting MR1[10] = 1 (A10 = 1), entering MPR mode, and executing a specific command sequence that adjusts DQS delay relative to CK. The W631GG8NB-11 datasheet details the full procedure in Section 8.9, including entry, adjustment, and exit steps - critical for achieving timing closure above DDR3-1600.
W631GG8NB-11 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Winbond Electronics Corporation
- Series:
- -
- Package/Case:
- 78-VFBGA
- Packaging:
- Tray
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- DRAM
- Technology:
- SDRAM - DDR3
- Memory Size:
- 1Gbit
- Memory Organization:
- 128M x 8
- Memory Interface:
- SSTL_15
- Clock Frequency:
- 933 MHz
- Write Cycle Time - Word, Page:
- 15ns
- Access Time:
- 20 ns
- Voltage - Supply:
- 1.425V ~ 1.575V
- Operating Temperature:
- 0°C ~ 95°C (TC)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 78-VFBGA (8x10.5)
W631GG8NB-11 FAQ
1.How can I place an order for W631GG8NB-11 through Aetrix?
Please submit a Request for Quotation (RFQ) for W631GG8NB-11 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for W631GG8NB-11 reliable?
The price and inventory of W631GG8NB-11 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GG8NB-11 is usually 5 days.
3.What payment methods are accepted for W631GG8NB-11?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GG8NB-11 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for W631GG8NB-11?
W631GG8NB-11 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your W631GG8NB-11 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for W631GG8NB-11?
For technical support, including W631GG8NB-11 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GG8NB-11 requirements.
6.How does Aetrix verify that W631GG8NB-11 is sourced from the original manufacturer or authorized distributors?
All W631GG8NB-11 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GG8NB-11 meets industry standards.
7.What is the process for return or replacement of W631GG8NB-11?
All W631GG8NB-11 units undergo pre-shipment inspection (PSI). If there is an issue with W631GG8NB-11, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The W631GG8NB-11 part is unused and in its original packaging.
Return procedure for W631GG8NB-11:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
W631GG8NB-11 Tags
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