Winbond Electronics Corporation W631GG8NB11I

Overview

W631GG8NB11I from Winbond Electronics is a 1 Gb (128 MB) DDR3 SDRAM organized as 16M × 8 banks × 8 bits, supporting DDR3-1866 speed grade (13-13-13 CL-tRCD-tRP), CAS Latency 13, and industrial temperature range (−40°C to +95°C). It features on-die termination (ODT), ZQ calibration, programmable CWL, and asynchronous RESET# for reliable memory subsystems in networking and industrial control applications.

For engineers reviewing the W631GG8NB11I datasheet, W631GG8NB11I pinout, W631GG8NB11I application, or W631GG8NB11I equivalent, this device delivers verified DDR3-1866 timing compliance, SSTL_15 interface compatibility, VFBGA78 package integration, and full JEDEC AC/DC specifications across its rated industrial temperature range.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-aligned DQ/DQS timing, and source-synchronous differential strobe (DQS/DQS#) operation. It supports posted CAS with programmable additive latency (AL = 0, CL−1, CL−2), auto-precharge, and burst lengths of 8 (BL8) or 4 (BC4) selectable on-the-fly.

Key functional blocks include mode registers MR0–MR3 for configuring CAS Latency, CWL, ODT settings, PASR, ASR, and MPR read patterns; ZQ calibration circuitry for output driver and ODT impedance tuning using an external 240 Ω resistor; and dual power domains (VDD/VDDQ = 1.5 V ± 75 mV) with independent self-refresh and power-down modes.

Key Specifications

Pinout & Package

VFBGA78 package (8 mm × 10.5 mm, 1.0 mm height, window-type BGA, RoHS-compliant lead-free finish) with ball pitch of 0.8 mm. Ball map conforms to JEDEC MO-273 standard for DDR3 SDRAM.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with IS43TR16128B-125KBL, W631GG8NB11I offers native x8 interface compatibility and smaller VFBGA78 footprint; versus MT41K128M8RH-125:E, it provides identical form-factor and timing but requires verification of Winbond-specific MPR and write leveling entry protocols.

Availability

W631GG8NB11I is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging applications requiring stable component supply, extended temperature support, and JEDEC-compliant DDR3-1866 performance.

Supply support for W631GG8NB11I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W631GG8NB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for applications demanding extended temperature operation, robust power management, and full JEDEC compliance in harsh environments.

FAQ

What is the maximum data rate supported by W631GG8NB11I?

W631GG8NB11I supports DDR3-1866 operation, delivering a maximum data transfer rate of 1866 MT/s with a 933 MHz differential clock input. This is achieved using CL=13, tRCD=tRP=13 ns, and full JEDEC AC/DC specifications across its −40°C to +95°C industrial temperature range. The device maintains timing margins under worst-case voltage and temperature conditions as defined in its published speed bin.

Does W631GG8NB11I support dynamic on-die termination (ODT)?

Yes, W631GG8NB11I supports Dynamic ODT (Rtt_WR) via MR2 configuration. This feature enables on-die termination to be activated only during WRITE bursts, improving signal integrity on the DQ bus without impacting READ operations. Rtt_WR values of 120 Ω, 60 Ω, or 40 Ω can be selected depending on system topology and trace impedance requirements.

How does the ZQ calibration function work on W631GG8NB11I?

W631GG8NB11I performs ZQ calibration using an external 240 Ω precision resistor connected to the ZQ pin. During ZQCAL commands, the device measures this reference to tune both output driver strength (for DQ/DQS) and ODT impedances (RTT_NOM, RTT_WR). Calibration occurs at power-up, after reset, and optionally during runtime to compensate for voltage/temperature drift, ensuring consistent signal integrity at DDR3-1866 speeds.

What is the purpose of the Multi-Purpose Register (MPR) in W631GG8NB11I?

The MPR in W631GG8NB11I stores a fixed 128-bit pattern (0x00000000) that can be read out via a dedicated MRS command. Its primary use is system-level timing calibration - particularly for write leveling - where the controller compares the received MPR pattern against expected phase alignment to adjust DQS-to-CK delay. This enables robust initialization at DDR3-1866 without requiring complex training algorithms.

Is W631GG8NB11I pin-compatible with other Winbond DDR3 SDRAMs in the same family?

W631GG8NB11I uses the standard JEDEC-compliant VFBGA78 package with SSTL_15 interface and identical ball assignment as other W631GG8NB variants (e.g., -09I, -12I, -15I). Pin compatibility is maintained across speed grades and temperature grades within the W631GG8NB family, allowing design reuse and binning flexibility - provided the host controller supports the target CL/CWL and timing parameters of the selected variant.