Winbond Electronics Corporation W631GG8NB11I TR

Overview

W631GG8NB11I TR from Winbond Electronics is a 1 Gb (128 MB) DDR3 SDRAM organized as 16M × 8 banks × 8 bits, operating at DDR3-1866 speed (13-13-13 CL), with industrial temperature range (−40°C to +95°C), 1.5 V supply, and VFBGA-78 package. It serves as main system memory in embedded controllers, networking processors, and industrial HMIs requiring high-bandwidth, low-latency data buffering.

For engineers reviewing the W631GG8NB11I TR datasheet, W631GG8NB11I TR pinout, W631GG8NB11I TR application, or W631GG8NB11I TR equivalent, key selection factors include CAS latency support (CL=5–13), programmable CWL (5–9), ZQ calibration, dynamic ODT, and industrial-grade thermal reliability across power-down and self-refresh modes.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks for concurrent access, synchronized via differential CK/CK# clocks and source-synchronous DQS/DQS# strobes. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), enabling efficient command bus utilization during burst transfers.

Functional features include asynchronous RESET#, on-die termination (ODT) with synchronous/dynamic modes, write leveling for timing calibration, multi-purpose register (MPR) for system-level timing validation, and partial array self-refresh (PASR) to reduce power in idle bank subsets.

Key Specifications

Pinout & Package

VFBGA-78 package (8 mm × 10.5 mm, 1.0 mm height) with 78 solder balls arranged in 8×10 array plus 2 dummy balls (B1, H10), using lead-free, RoHS-compliant materials. Ball pitch is 0.8 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, W631GG8NB11I TR provides superior thermal adaptability via ASR/PASR, tighter timing control through write leveling and MPR, and native DDR3-1866 bandwidth - making it optimal for high-reliability, performance-critical industrial and medical edge systems.

Availability

W631GG8NB11I TR is available at Aetrix Electronics and suitable for industrial HMIs, networking processors, embedded vision systems, and medical imaging devices requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GG8NB11I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, RAM, and trusted computing ICs, with global manufacturing and quality certifications.

The W631GG8NB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for mission-critical embedded applications demanding extended temperature operation, robust power management, and JEDEC-compliant signal integrity.

FAQ

What is the maximum supported CAS latency for W631GG8NB11I TR?

W631GG8NB11I TR supports CAS Latency settings from CL=5 up to CL=13, programmable via Mode Register MR0. The −11/11I/11J speed grade guarantees CL=13 at DDR3-1866 (13-13-13) timing, enabling flexible trade-offs between latency and timing margin in system-level timing closure.

Does W631GG8NB11I TR support write leveling, and how is it implemented?

Yes, W631GG8NB11I TR supports write leveling per JEDEC DDR3 specification. It uses the DQS/DQS# strobe pair in conjunction with the MPR to allow the memory controller to adjust DQS delay relative to CK, compensating for board-level skew. This function is enabled via MR1 bit A6 and requires no external components.

What is the purpose of the RESET# pin on W631GG8NB11I TR, and is it required for initialization?

The RESET# pin on W631GG8NB11I TR is an asynchronous, active-low signal that initiates power-up initialization and resets internal state machines. It is required for reliable initialization: the device enters reset state upon power application and exits only after stable VDD/VDDQ, CK/CK# and RESET# deassertion per JEDEC-defined sequence.

How does dynamic ODT (Rtt_WR) operate in W631GG8NB11I TR, and what termination values are available?

In W631GG8NB11I TR, dynamic ODT activates on-demand during WRITE bursts only, using Rtt_WR values programmed in MR2. Supported impedances are 120 Ω, 60 Ω, and 40 Ω (nominal), selected via MR2 bits A1–A0. This reduces switching noise on shared DQ buses and improves write signal integrity without affecting read paths.

Can W631GG8NB11I TR operate in environments exceeding +95°C, and what configuration is needed?

Yes, W631GG8NB11I TR supports operation up to +95°C case temperature. For sustained operation above +85°C, the device requires either Manual Self-Refresh with Extended Temperature Range (MR2 A6=0, A7=1) or Auto Self-Refresh (ASR) enabled (MR2 A6=1). Both modes mandate doubling refresh frequency to tREFI = 3.9 µs.