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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Winbond Electronics Corporation W631GG8NB-11 TR

Name: W631GG8NB-11 TR
Brand: Winbond Electronics Corporation
SKU: W631GG8NB-11 TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W631GG8NB-11 TR

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 78-VFBGA

Datasheet:: W631GG8NB-11 TR.pdf

Description:: IC DRAM 1GBIT SSTL 15 78VFBGA

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Product details

Overview

W631GG8NB-11 TR from Winbond Electronics is a 1 Gb (128 MB) DDR3 SDRAM organized as 16M × 8 banks × 8 bits, compliant with DDR3-1866 (13-13-13) timing, operating at 1.5 V supply, and rated for 0°C to 95°C case temperature. It supports programmable CAS Latency (CL = 5–13), CAS Write Latency (CWL = 5–9), and on-die termination (ODT) for high-speed memory subsystems in industrial computing and embedded controllers.

For engineers reviewing the W631GG8NB-11 TR datasheet, W631GG8NB-11 TR pinout, W631GG8NB-11 TR application, or W631GG8NB-11 TR equivalent, key selection considerations include its DDR3-1866 speed bin, VFBGA-78 package, SSTL_15 interface compatibility, ZQ calibration support, and industrial-grade thermal range - all critical for stable memory interface design in space-constrained, thermally demanding systems.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-aligned DQ/DQS timing, and source-synchronous differential strobe (DQS/DQS#) I/O. It uses asynchronous RESET# for power-up initialization and supports both synchronous and dynamic ODT modes with programmable RTT values.

Functional operation includes posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, burst lengths of 8 (BL8) or burst chop 4 (BC4), and system-level calibration features including write leveling and Multi-Purpose Register (MPR) readout for timing margin validation.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	1 Gb (128 MB), organized as 16M words × 8 banks × 8 bits - defines usable capacity and row/column/bank addressing structure
Data Rate	DDR3-1866 (13-13-13), f_CKMAX = 933 MHz - sets maximum clock frequency and corresponding t_CK ≤ 1.07 ns for timing closure
Voltage Supply	VDD/VDDQ = 1.5 V ± 0.075 V - requires tight regulation and decoupling for signal integrity and JEDEC compliance
CAS Latency Range	CL = 5, 6, 7, 8, 9, 10, 11, 13 - enables trade-off between latency and bandwidth across system clock frequencies
CAS Write Latency	CWL = 5–9, programmable per frequency - determines write-to-strobe alignment and impacts WL = AL + CWL timing budget
Package	VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant lead-free) - dictates PCB layout, thermal dissipation, and board-level reliability
Operating Temperature	0°C ≤ T_CASE ≤ 95°C - validated for industrial ambient conditions without derating
Interface Standard	SSTL_15 - mandates compatible driver/receiver voltage thresholds and termination schemes on address, command, and data buses

Pinout & Package

VFBGA-78 package with 8×10.5 mm² footprint, 1.0 mm thickness, and window-type ball layout optimized for signal integrity and thermal performance in high-density memory modules.

Pin/Terminal	Circuit Role	Design Meaning
A0–A13	Address Inputs	Row/column/bank address bits; latched on CK rising/CK# falling edge for command decoding
BA0–BA2	Bank Address	Selects one of eight internal banks for concurrent operation and bank interleaving
CK / CK#	Differential Clock	Edge-triggered reference for all command/address latching; defines t_CK timing base
DQ0–DQ7	Data I/O	Bidirectional 8-bit data bus synchronized to DQS/DQS#; supports BL8 and BC4 burst modes
DQS / DQS#	Differential Strobe	Source-synchronous strobe aligned to read data (edge-aligned) and write data (center-aligned)
DM	Data Mask	Per-byte mask control for write operations; suppresses masked byte transfers without affecting burst length
RESET#	Asynchronous Reset	Active-low signal initiating power-up initialization sequence and mode register reset
ODT	On-Die Termination Control	Dynamic enable/disable of internal termination resistors (RTT_NOM, RTT_WR) on DQ/DQS/DM lines
WE#, RAS#, CAS#	Command Inputs	Standard DDR3 command encoding pins; sampled on every CK rising edge to decode ACT, READ, WRITE, PRE, REF, etc.
VDD / VDDQ	Power Supplies	1.5 V core (VDD) and I/O (VDDQ) supplies; require separate decoupling and low-impedance routing
VSS	GND	Signal and power return; multiple balls ensure low-inductance ground path for high-speed switching

Key Features

Feature	Design Value
ZQ Calibration	Enables precise output driver impedance and ODT matching using external 240 Ω reference resistor, reducing signal reflections and improving timing margins
Write Leveling	Allows controller to calibrate DQS-to-CK skew during initialization, ensuring reliable write capture across process/voltage/temperature corners
Multi-Purpose Register (MPR)	Provides predefined bit pattern for system-level timing margin testing without requiring functional memory access or data corruption risk
Dynamic ODT	Switches ODT impedance (RTT_WR) on-the-fly during write bursts to maintain signal integrity on bidirectional DQ bus while minimizing stub reflections
Partial Array Self Refresh (PASR)	Reduces self-refresh current by refreshing only active memory banks, extending battery life in portable or low-power standby applications
Programmable Additive Latency (AL)	Inserts configurable delay (AL = 0, CL−1, CL−2) between command decode and CAS# assertion, optimizing command bus utilization and reducing command collision

Applications

Industrial PLC Controllers	Medical Imaging Systems
Use Scenario: Real-time deterministic execution of ladder logic and motion control algorithms requiring predictable memory access latency and sustained bandwidth. IC Role / Device Role / Timing Role: Primary working memory buffer interfacing directly with ARM Cortex-M7 or RISC-V SoC memory controller via 16-bit DDR3 bus. Use Value: DDR3-1866 speed bin ensures ≥1.49 GB/s peak bandwidth; 0°C–95°C rating guarantees uninterrupted operation in cabinet-mounted control units.	Use Scenario: High-throughput buffering of raw sensor data from ultrasound transducer arrays before FPGA-based beamforming and image reconstruction. IC Role / Device Role / Timing Role: Burst-oriented frame buffer supporting continuous 8-bit pixel streaming at >200 MB/s sustained write rate with minimal latency jitter. Use Value: BL8 + CWL=7 configuration delivers optimal write throughput; PASR reduces idle power during inter-frame processing gaps.
Network Edge Routers	Automated Test Equipment (ATE)
Use Scenario: Packet buffering and lookup table storage in Layer 3 forwarding engines handling multi-gigabit Ethernet traffic with strict jitter constraints. IC Role / Device Role / Timing Role: Dual-rank DDR3 channel component supporting ECC-capable memory controller with interleaved bank activation. Use Value: Eight-bank architecture enables high concurrency; ODT and write leveling ensure signal integrity across 4-layer PCB traces up to 8 inches long.	Use Scenario: High-speed digital pattern memory storing test vectors and expected responses for parallel device under test (DUT) evaluation at 100+ MHz clock rates. IC Role / Device Role / Timing Role: Low-latency, high-reliability memory subsystem synchronized to ATE timing generator with sub-nanosecond setup/hold windows. Use Value: CL=7 and tAA ≤13.91 ns guarantee deterministic read response; MPR readout validates timing margin before production test ramp.

Industrial PLC Controllers

Medical Imaging Systems

Use Scenario: Real-time deterministic execution of ladder logic and motion control algorithms requiring predictable memory access latency and sustained bandwidth.

IC Role / Device Role / Timing Role: Primary working memory buffer interfacing directly with ARM Cortex-M7 or RISC-V SoC memory controller via 16-bit DDR3 bus.

Use Value: DDR3-1866 speed bin ensures ≥1.49 GB/s peak bandwidth; 0°C–95°C rating guarantees uninterrupted operation in cabinet-mounted control units.

Use Scenario: High-throughput buffering of raw sensor data from ultrasound transducer arrays before FPGA-based beamforming and image reconstruction.

IC Role / Device Role / Timing Role: Burst-oriented frame buffer supporting continuous 8-bit pixel streaming at >200 MB/s sustained write rate with minimal latency jitter.

Use Value: BL8 + CWL=7 configuration delivers optimal write throughput; PASR reduces idle power during inter-frame processing gaps.

Network Edge Routers

Automated Test Equipment (ATE)

Use Scenario: Packet buffering and lookup table storage in Layer 3 forwarding engines handling multi-gigabit Ethernet traffic with strict jitter constraints.

IC Role / Device Role / Timing Role: Dual-rank DDR3 channel component supporting ECC-capable memory controller with interleaved bank activation.

Use Value: Eight-bank architecture enables high concurrency; ODT and write leveling ensure signal integrity across 4-layer PCB traces up to 8 inches long.

Use Scenario: High-speed digital pattern memory storing test vectors and expected responses for parallel device under test (DUT) evaluation at 100+ MHz clock rates.

IC Role / Device Role / Timing Role: Low-latency, high-reliability memory subsystem synchronized to ATE timing generator with sub-nanosecond setup/hold windows.

Use Value: CL=7 and tAA ≤13.91 ns guarantee deterministic read response; MPR readout validates timing margin before production test ramp.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT41K128M8RH-125:E	Same density (1 Gb), VFBGA-78, DDR3L-1600 (1.35 V), CL=11, tRC = 48.75 ns - lower voltage, slower speed, tighter tRC	Targeted for ultra-low-power embedded systems where 1.35 V operation and reduced thermal load outweigh bandwidth needs	Select when system power envelope restricts VDD/VDDQ to 1.35 V and DDR3-1600 bandwidth suffices
IS43TR16128B-125KBL	16-bit bus (x16), same DDR3-1866 speed, VFBGA-96, CL=13, tAA = 13.75 ns - wider data bus, larger package, slightly higher latency	Suitable for SoCs with native x16 memory interfaces requiring fewer chips per channel and higher per-pin efficiency	Choose when board layout allows larger 96-ball package and memory controller supports x16 configuration

Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, W631GG8NB-11 TR provides full DDR3-1866 bandwidth at standard 1.5 V, fits compact VFBGA-78 layouts, and offers broader CL/CWL flexibility - making it optimal for industrial designs balancing performance, thermal headroom, and PCB area constraints.

Availability

W631GG8NB-11 TR is available at Aetrix Electronics and suitable for industrial PLC controllers, medical imaging systems, network edge routers, and automated test equipment requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant sourcing.

Supply support for W631GG8NB-11 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W631GG8NB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for robust, high-reliability memory subsystems in thermally demanding embedded applications with extended temperature operation and JEDEC-compliant timing stability.

FAQ

What is the maximum supported CAS Latency for W631GG8NB-11 TR?

W631GG8NB-11 TR supports CAS Latency settings of CL = 5, 6, 7, 8, 9, 10, 11, 13, and 14. For its DDR3-1866 speed grade (-11), CL = 13 is the highest validated setting per JEDEC specification, delivering tAA ≤ 13.75 ns at 933 MHz. CL = 14 is supported but requires verification against system-level timing margins and may not be enabled by default in SPD programming.

Does W631GG8NB-11 TR support dynamic on-die termination (ODT)?

Yes, W631GG8NB-11 TR supports Dynamic ODT (Rtt_WR) as defined in MR2. This feature allows the DRAM to switch ODT impedance on DQ/DQS/DM lines during write operations only, improving signal integrity without impacting read operations. The supported Rtt_WR values are 120 Ω, 60 Ω, and 40 Ω, selectable via MR2 bitfield A2–A0.

What package type and ball count does W631GG8NB-11 TR use?

W631GG8NB-11 TR uses a VFBGA-78 package: a 8 mm × 10.5 mm, 1.0 mm thick, lead-free, RoHS-compliant window-type ball grid array with 78 solder balls arranged in a 9×9 array (excluding corner blanks). This package is optimized for thermal dissipation and high-speed signal routing in space-constrained industrial PCBs.

Can W631GG8NB-11 TR operate in extended temperature ranges beyond 95°C?

No - W631GG8NB-11 TR is rated for 0°C ≤ T_CASE ≤ 95°C only. For operation up to 105°C, the -11J variant (W631GG8NB11J) must be used, which includes enhanced refresh management (ASR or Manual Self-Refresh) and extended thermal qualification. Using W631GG8NB-11 TR above 95°C violates JEDEC specifications and risks data retention failure.

How is ZQ calibration performed on W631GG8NB-11 TR?

ZQ calibration on W631GG8NB-11 TR is initiated by the memory controller issuing a ZQCL (ZQ Calibration Long) command after power-up or reset. The DRAM uses an external 240 Ω ±1 % resistor connected between ZQ pin and VSS to calibrate internal output driver and ODT impedances. Calibration completes within tZQCS ≤ 512 clocks and remains valid until next ZQCL or power cycle.

W631GG8NB-11 TR Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 78-VFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - DDR3

Memory Size:: 1Gbit

Memory Organization:: 128M x 8

Memory Interface:: SSTL_15

Clock Frequency:: 933 MHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: 20 ns

Voltage - Supply:: 1.425V ~ 1.575V

Operating Temperature:: 0°C ~ 95°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 78-VFBGA (8x10.5)

W631GG8NB-11 TR FAQ

1.How can I place an order for W631GG8NB-11 TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W631GG8NB-11 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W631GG8NB-11 TR reliable?

The price and inventory of W631GG8NB-11 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GG8NB-11 TR is usually 5 days.

3.What payment methods are accepted for W631GG8NB-11 TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GG8NB-11 TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W631GG8NB-11 TR?

W631GG8NB-11 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W631GG8NB-11 TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W631GG8NB-11 TR?

For technical support, including W631GG8NB-11 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GG8NB-11 TR requirements.

6.How does Aetrix verify that W631GG8NB-11 TR is sourced from the original manufacturer or authorized distributors?

All W631GG8NB-11 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GG8NB-11 TR meets industry standards.

7.What is the process for return or replacement of W631GG8NB-11 TR?

All W631GG8NB-11 TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GG8NB-11 TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W631GG8NB-11 TR part is unused and in its original packaging.

Return procedure for W631GG8NB-11 TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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