Winbond Electronics Corporation W631GG8NB-12

Overview

W631GG8NB-12 from Winbond Electronics is a 1 Gb (128 MB) DDR3 SDRAM organized as 16M × 8 banks × 8 bits, compliant with DDR3-1600 (11-11-11) timing, operating at 1.5 V supply, and rated for 0°C to 95°C case temperature. It supports programmable CAS Latency (CL = 5–11), CAS Write Latency (CWL = 5–8), and features on-die termination (ODT), ZQ calibration, and asynchronous RESET# for reliable memory subsystems in embedded computing and industrial controllers.

For engineers reviewing the W631GG8NB-12 datasheet, W631GG8NB-12 pinout, W631GG8NB-12 application, or W631GG8NB-12 equivalent, key selection considerations include its DDR3-1600 speed bin, VFBGA-78 package, SSTL_15 interface compatibility, and support for dynamic ODT, write leveling, and partial array self-refresh (PASR) in thermally constrained designs.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access and high bandwidth efficiency. Its differential CK/CK# clocking and DQS/DQS# strobes support source-synchronous double-data-rate transfers, while DLL alignment ensures precise timing between data and strobe edges.

The device supports programmable mode registers (MR0–MR3) for configuring burst length (BL8/BC4), read ordering (interleaved/nibble), additive latency (AL = 0, CL−1, CL−2), and power management modes including precharged/active power-down, self-refresh, and auto self-refresh (ASR) with temperature-aware refresh rate scaling.

Key Specifications

Pinout & Package

VFBGA-78 package (8 mm × 10.5 mm, 1.0 mm thickness, window BGA type) with 78 solder balls arranged in 8 rows × 10 columns (with 2 missing balls). Ball pitch is 0.8 mm. Compatible with standard DDR3 layout rules and reflow profiles for lead-free assembly.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, the W631GG8NB-12 offers native 1.5 V operation without voltage translation, tighter tRP/tRCD timing margins for higher refresh tolerance, and drop-in compatibility with standard DDR3-1600 controller PHY settings.

Availability

W631GG8NB-12 is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical imaging systems requiring stable component supply, long-term lifecycle assurance, and JEDEC-compliant DDR3-1600 performance.

Supply support for W631GG8NB-12 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and DDR SDRAM, with ISO/TS 16949 and ISO 14001 certifications.

The W631GG8NB-12 belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for reliability-critical applications demanding extended temperature operation, robust signal integrity, and long-term supply stability in harsh environments.

FAQ

What is the maximum clock frequency supported by the W631GG8NB-12?

The W631GG8NB-12 is rated for DDR3-1600 operation, meaning it supports a maximum input clock frequency (fCK) of 800 MHz, delivering 1600 megatransfers per second. This is validated under JEDEC conditions with CL=11, tRCD=13.75 ns, and tRP=13.75 ns. The device may operate at lower frequencies (e.g., DDR3-1333 or DDR3-1066) with relaxed timing parameters, but 800 MHz is its guaranteed maximum for full specification compliance.

Does the W631GG8NB-12 support on-die termination (ODT), and how is it configured?

Yes, the W631GG8NB-12 supports programmable on-die termination (ODT) via MR1 and MR2 registers. It provides selectable nominal (RTT_NOM) and dynamic write (RTT_WR) termination values - including 75 Ω, 150 Ω, and 50 Ω - applied to DQ, DQS, and DM lines. ODT is enabled synchronously via ODT pin assertion or dynamically during writes using Rtt_WR, improving signal integrity without external resistors.

Can the W631GG8NB-12 operate in extended temperature ranges beyond 95°C?

No - the W631GG8NB-12 variant is specified for 0°C ≤ TCASE ≤ 95°C only. For operation up to 105°C, the W631GG8NB12J variant must be used, which includes enhanced thermal qualification, mandatory ASR or Manual Self-Refresh mode activation (via MR2[7:6]), and doubled refresh rate (tREFI = 3.9 µs). Using W631GG8NB-12 above 95°C violates JEDEC specifications and risks data retention failure.

How does write leveling function in the W631GG8NB-12, and why is it required?

Write leveling in the W631GG8NB-12 adjusts DQS-to-CK skew at the DRAM input by iteratively delaying DQS until the DRAM successfully captures the WRITE command. It is required to compensate for PCB trace length mismatches in high-speed fly-by topologies, ensuring setup/hold timing margins are met at 1600 MT/s. The process uses the MPR to return feedback and is initiated via mode register write before normal operation.

What package type and ball count does the W631GG8NB-12 use?

The W631GG8NB-12 uses a VFBGA-78 package: a very thin fine-pitch ball grid array with 78 solder balls arranged in an 8×10 grid (two positions omitted), measuring 8 mm × 10.5 mm with 1.0 mm thickness. It employs lead-free, RoHS-compliant materials and requires standard DDR3 reflow profiles and 0.8 mm ball pitch routing.