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Winbond Electronics Corporation W631GG8NB-12 TR

Name: W631GG8NB-12 TR
Brand: Winbond Electronics Corporation
SKU: W631GG8NB-12 TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: W631GG8NB-12 TR

Manufacturer:: Winbond Electronics Corporation

Category:: Memory

Package:: 78-VFBGA

Datasheet:: W631GG8NB-12 TR.pdf

Description:: IC DRAM 1GBIT SSTL 15 78VFBGA

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Product details

Overview

W631GG8NB-12 TR from Winbond Electronics is a 1 Gb (128 MB) DDR3 SDRAM organized as 16M × 8 banks × 8 bits, compliant with DDR3-1600 (11-11-11) timing, operating at 1.5 V supply, and rated for 0°C to 95°C case temperature. It delivers 1600 MT/s data transfer rates with programmable CAS Latency (CL = 5–11), CAS Write Latency (CWL = 5–8), and supports ZQ calibration, on-die termination (ODT), and asynchronous reset for embedded computing and industrial control memory subsystems.

For engineers reviewing the W631GG8NB-12 TR datasheet, W631GG8NB-12 TR pinout, W631GG8NB-12 TR application, or W631GG8NB-12 TR equivalent, key selection criteria include DDR3-1600 speed bin compliance, VFBGA-78 package compatibility, SSTL_15 interface voltage level, CL/CWL programmability, and industrial-grade thermal range support without extended temperature variants.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-aligned DQ/DQS timing, and source-synchronous I/O referenced to differential CK/CK# and DQS/DQS# pairs. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2), auto-precharge, and burst lengths of 8 (BL8) or 4 (BC4) selectable on-the-fly.

Functional operation includes synchronous command decoding on CK rising edge, bi-directional differential strobes edge-aligned on reads and center-aligned on writes, and dynamic ODT control via MR1/MR2. Power management features include precharged/active power-down modes, self-refresh, partial array self-refresh (PASR), and ASR with temperature-triggered refresh rate doubling above 95°C.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Density	1 Gb (128 MB), organized as 16M words × 8 banks × 8 bits - defines usable capacity and bank-level parallelism
Data Rate	DDR3-1600 (1600 MT/s), CL=11, tCK(AVG)=1.25 ns - sets maximum sustained bandwidth per pin
Supply Voltage	VDD/VDDQ = 1.5 V ± 0.075 V - mandates compatible 1.5 V DDR3 power delivery and level-shifting
CAS Latency	Programmable CL = 5, 6, 7, 8, 9, 10, 11 - determines read access latency in clock cycles
CAS Write Latency	Programmable CWL = 5, 6, 7, 8 - sets write-to-strobe alignment offset for timing closure
Package	VFBGA-78 (8 mm × 10.5 mm, 1.0 mm height, RoHS-compliant lead-free) - defines PCB footprint and thermal profile
Interface Standard	SSTL_15 - requires matched 1.5 V termination and driver impedance for signal integrity
Operating Temp	0°C ≤ TCASE ≤ 95°C - specifies ambient thermal envelope for reliable operation without derating

Pinout & Package

VFBGA-78 package with 8×10.5 mm² body, 1.0 mm thickness, and window BGA construction using lead-free, RoHS-compliant materials. Ball pitch is 0.8 mm.

Pin/Terminal	Circuit Role	Design Meaning
A1	VDD	Core power supply (1.5 V) - must be decoupled locally per JEDEC DDR3 layout guidelines
A2	DQ0	Data input/output bit 0 - bidirectional, SSTL_15 compliant, paired with DQS0/DQS0#
A3	DQ1	Data input/output bit 1 - part of byte lane 0, shares DQS0 strobe timing
A4	DQ2	Data input/output bit 2 - requires matched trace length within byte lane for skew control
A5	DQ3	Data input/output bit 3 - used in BL8/BC4 bursts; DM0 masks this lane during writes
A6	DQ4	Data input/output bit 4 - first bit of byte lane 1, referenced to DQS1/DQS1#
A7	DQ5	Data input/output bit 5 - supports differential strobe center-alignment on write operations
A8	DQ6	Data input/output bit 6 - subject to ODT impedance control during reads/writes per MR1 settings
A9	DQ7	Data input/output bit 7 - last bit of byte lane 1; DM1 masks this lane during writes
B1	VSS	Digital ground - provides return path for core logic and I/O circuits
B2	DQS0	Differential data strobe 0 (positive) - source-synchronous with DQ0–DQ3, edge-aligned on reads
B3	DQS0#	Differential data strobe 0 (negative) - complements DQS0; required for LVDS-style receiver operation
B4	DQS1	Differential data strobe 1 (positive) - clocks DQ4–DQ7; center-aligned on writes
B5	DQS1#	Differential data strobe 1 (negative) - enables precise write capture timing via DLL alignment
B6	CK	Clock input (positive) - all commands latched at cross-point of CK rising / CK# falling
B7	CK#	Clock input (negative) - differential pair defines system timing reference; 0.8 mm pitch critical for jitter control
B8	RESET#	Asynchronous active-low reset - initiates power-up initialization sequence and clears internal state
B9	ODT	On-die termination control - enables/disables RTT_NOM/RTT_WR per MR1/MR2 configuration
C1	VDDQ	I/O power supply (1.5 V) - independent from VDD to isolate analog I/O noise from core logic
C2	DM0	Data mask 0 - masks DQ0–DQ3 during write operations; sampled on DQS0 rising edge
C3	DM1	Data mask 1 - masks DQ4–DQ7 during write operations; sampled on DQS1 rising edge
C4	WE#	Write enable (active low) - controls write command execution; sampled on CK rising edge
C5	CAS#	Column address strobe (active low) - selects column address and initiates read/write access
C6	RAS#	Row address strobe (active low) - initiates ACT/REF/PRE commands depending on address inputs
C7	CS#	Chip select (active low) - enables command decoding; all other inputs ignored when CS# high
C8	A0–A12	Address/command inputs - multiplexed row/column address and mode register set (MRS) fields
C9	BA0–BA2	Bank address inputs - select one of eight internal banks for concurrent operation
D1	VSS	Digital ground - dedicated return for high-speed I/O switching currents
D2	ZQ	ZQ calibration reference - connects to 240 Ω ±1 % external resistor to ground for output driver/ODT tuning
D3–D9	VSS/VDD	Power/ground balls - provide additional current paths and reduce IR drop across package

Key Features

Feature	Design Value
Programmable CAS Write Latency (CWL)	CWL = 5–8 configurable per frequency - enables precise write strobe-to-data alignment for timing margin optimization
ZQ Calibration	One-time or periodic calibration using external 240 Ω resistor - maintains output driver and ODT impedance accuracy over voltage/temperature
Dynamic ODT (Rtt_WR)	Termination enabled only during write bursts - reduces stub reflections and improves write eye opening without loading read paths
Multi-Purpose Register (MPR)	Predefined 128-bit pattern readable via MRS - supports system-level timing calibration and DQ/DQS deskew verification
Write Leveling	Per-lane delay adjustment via MRS - compensates for board-level DQS-to-CK skew to meet setup/hold windows at DRAM receiver
Partial Array Self-Refresh (PASR)	Refresh only selected banks - cuts self-refresh current by up to 50 % when full memory array not required active

Applications

Industrial PLC Memory Buffer	Network Router Packet Buffer
Use Scenario: Real-time deterministic data buffering in programmable logic controller backplanes handling multiple I/O modules and fieldbus protocols. IC Role / Device Role / Timing Role: Primary working memory for firmware execution and cyclic process data storage, interfacing directly with ARM Cortex-M7 or RISC-V SoC via 16-bit DDR3 bus. Use Value: DDR3-1600 bandwidth meets 100+ Mbps fieldbus throughput requirements while PASR and power-down modes reduce average power below 150 mW during idle scan cycles.	Use Scenario: High-throughput packet buffering in Layer 3 enterprise routers supporting 10G Ethernet line cards and deep packet inspection engines. IC Role / Device Role / Timing Role: Shared packet buffer memory accessed concurrently by ingress/egress traffic managers and QoS schedulers via dual-port DDR3 controller. Use Value: 8-bank concurrency and programmable CL/CWL allow simultaneous read-modify-write operations across multiple queues with sub-15 ns tRCD latency.
Medical Imaging Display Controller	Automotive ADAS Video Preprocessor
Use Scenario: Frame buffer memory for high-resolution DICOM display controllers rendering real-time ultrasound or MRI video streams at 60 fps. IC Role / Device Role / Timing Role: Dual-channel DDR3 memory subsystem providing 12.8 GB/s aggregate bandwidth to FPGA-based video pipeline with 24-bit RGB output. Use Value: SSTL_15 interface and DLL-aligned DQS ensure <10 ps inter-lane skew across 16-bit data bus, preserving pixel timing integrity for clinical-grade displays.	Use Scenario: On-camera preprocessing buffer for 8 MP automotive surround-view systems performing real-time HDR fusion and lens correction before GPU ingestion. IC Role / Device Role / Timing Role: Low-latency frame store for image sensor ISP pipelines, operating under AEC-Q200 stress conditions with rapid thermal cycling. Use Value: 0°C to 95°C rating and robust ZQ calibration maintain signal integrity across −40°C cold start to 105°C under-hood transient, avoiding frame drops during thermal ramp.

Industrial PLC Memory Buffer

Network Router Packet Buffer

Use Scenario: Real-time deterministic data buffering in programmable logic controller backplanes handling multiple I/O modules and fieldbus protocols.

IC Role / Device Role / Timing Role: Primary working memory for firmware execution and cyclic process data storage, interfacing directly with ARM Cortex-M7 or RISC-V SoC via 16-bit DDR3 bus.

Use Value: DDR3-1600 bandwidth meets 100+ Mbps fieldbus throughput requirements while PASR and power-down modes reduce average power below 150 mW during idle scan cycles.

Use Scenario: High-throughput packet buffering in Layer 3 enterprise routers supporting 10G Ethernet line cards and deep packet inspection engines.

IC Role / Device Role / Timing Role: Shared packet buffer memory accessed concurrently by ingress/egress traffic managers and QoS schedulers via dual-port DDR3 controller.

Use Value: 8-bank concurrency and programmable CL/CWL allow simultaneous read-modify-write operations across multiple queues with sub-15 ns tRCD latency.

Medical Imaging Display Controller

Automotive ADAS Video Preprocessor

Use Scenario: Frame buffer memory for high-resolution DICOM display controllers rendering real-time ultrasound or MRI video streams at 60 fps.

IC Role / Device Role / Timing Role: Dual-channel DDR3 memory subsystem providing 12.8 GB/s aggregate bandwidth to FPGA-based video pipeline with 24-bit RGB output.

Use Value: SSTL_15 interface and DLL-aligned DQS ensure <10 ps inter-lane skew across 16-bit data bus, preserving pixel timing integrity for clinical-grade displays.

Use Scenario: On-camera preprocessing buffer for 8 MP automotive surround-view systems performing real-time HDR fusion and lens correction before GPU ingestion.

IC Role / Device Role / Timing Role: Low-latency frame store for image sensor ISP pipelines, operating under AEC-Q200 stress conditions with rapid thermal cycling.

Use Value: 0°C to 95°C rating and robust ZQ calibration maintain signal integrity across −40°C cold start to 105°C under-hood transient, avoiding frame drops during thermal ramp.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MT41K128M8RH-125:E	Same density (1 Gb), VFBGA-78, DDR3L-1600 (1.35 V), CL=11, tRCD/tRP = 13.75 ns min	Requires 1.35 V supply; not backward-compatible with 1.5 V DDR3 systems	Select only if system uses DDR3L voltage rails and JEDEC SPD profile matches W631GG8NB-12 TR's CL/CWL programming
IS43TR16128B-125KBL	1 Gb, FBGA-96, DDR3-1600, CL=11, tRCD/tRP = 13.75 ns min, but 96-ball vs. 78-ball footprint	Non-drop-in replacement due to different ball count, pitch, and layout - requires PCB redesign	Consider only for new designs where larger package area is acceptable and thermal performance justifies extra footprint

Compared with MT41K128M8RH-125:E and IS43TR16128B-125KBL, W631GG8NB-12 TR offers native 1.5 V operation and compact VFBGA-78 packaging, making it suitable for legacy DDR3 systems and space-constrained industrial boards where voltage compatibility and footprint minimization are primary constraints.

Availability

W631GG8NB-12 TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, medical imaging, and automotive ADAS applications requiring stable component supply, long-term lifecycle assurance, and JEDEC-compliant DDR3-1600 performance.

Supply support for W631GG8NB-12 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W631GG8NB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for applications demanding extended temperature operation, robust ZQ calibration, and proven reliability in mission-critical embedded systems.

FAQ

What DDR3 speed bin does W631GG8NB-12 TR support?

W631GG8NB-12 TR supports the DDR3-1600 speed bin with CL=11, tRCD/tRP=11-ns timing (11-11-11), and maximum clock frequency of 800 MHz (1600 MT/s). It is validated for operation at 1.5 V supply and 0°C to 95°C case temperature, meeting JEDEC standard JESD79-3F specifications for this speed grade.

Does W631GG8NB-12 TR support write leveling?

Yes, W631GG8NB-12 TR supports write leveling via mode register configuration (MR2 A10 = 1). This feature allows the memory controller to calibrate per-lane DQS-to-CK delay offsets during initialization, ensuring reliable write capture timing across all 8 data bits in each byte lane. The procedure is defined in section 8.9 of the W631GG8NB datasheet.

What is the package type and ball count of W631GG8NB-12 TR?

W631GG8NB-12 TR uses a VFBGA-78 package: 8 mm × 10.5 mm body size, 1.0 mm height, 0.8 mm ball pitch, and 78 solder balls arranged in a window BGA configuration. It is lead-free and RoHS-compliant, with ball assignments matching JEDEC-standard DDR3 SDRAM pinout for VFBGA-78.

Can W631GG8NB-12 TR operate at 1.35 V?

No, W631GG8NB-12 TR is specified only for 1.5 V ± 0.075 V operation (VDD/VDDQ). It is not a DDR3L device and does not guarantee functionality or timing compliance at 1.35 V. Using 1.35 V may result in failed initialization, data corruption, or premature wear; always supply 1.5 V per the W631GG8NB-12 TR datasheet DC operating conditions.

What termination resistors are required for W631GG8NB-12 TR's ZQ calibration?

W631GG8NB-12 TR requires a single 240 Ω ±1 % external resistor connected between the ZQ pin and VSS (ground), with minimal parasitic capacitance (<2 pF) and trace length <5 mm. This resistor serves as the reference for both output driver strength calibration and on-die termination (ODT) impedance tuning, as specified in section 8.18 of the W631GG8NB datasheet.

W631GG8NB-12 TR Specifications

Product attributes: Attribute value

Manufacturer:: Winbond Electronics Corporation

Series:: -

Package/Case:: 78-VFBGA

Packaging:: Tape & Reel (TR)

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: DRAM

Technology:: SDRAM - DDR3

Memory Size:: 1Gbit

Memory Organization:: 128M x 8

Memory Interface:: SSTL_15

Clock Frequency:: 800 MHz

Write Cycle Time - Word, Page:: 15ns

Access Time:: 20 ns

Voltage - Supply:: 1.425V ~ 1.575V

Operating Temperature:: 0°C ~ 95°C (TC)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 78-VFBGA (8x10.5)

W631GG8NB-12 TR FAQ

1.How can I place an order for W631GG8NB-12 TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W631GG8NB-12 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W631GG8NB-12 TR reliable?

The price and inventory of W631GG8NB-12 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GG8NB-12 TR is usually 5 days.

3.What payment methods are accepted for W631GG8NB-12 TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GG8NB-12 TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W631GG8NB-12 TR?

W631GG8NB-12 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W631GG8NB-12 TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W631GG8NB-12 TR?

For technical support, including W631GG8NB-12 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GG8NB-12 TR requirements.

6.How does Aetrix verify that W631GG8NB-12 TR is sourced from the original manufacturer or authorized distributors?

All W631GG8NB-12 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GG8NB-12 TR meets industry standards.

7.What is the process for return or replacement of W631GG8NB-12 TR?

All W631GG8NB-12 TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GG8NB-12 TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W631GG8NB-12 TR part is unused and in its original packaging.

Return procedure for W631GG8NB-12 TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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