Winbond Electronics Corporation W631GG8NB15I

Overview

W631GG8NB15I from Winbond Electronics is a 1 Gb (128 MB) DDR3 SDRAM organized as 16M × 8 banks × 8 bits, operating at DDR3-1333 speed (9-9-9 CL/tRCD/tRP), with 1.5 V supply, industrial temperature range (−40°C to +95°C), and VFBGA78 (8 mm × 10.5 mm) package. It serves as main memory in embedded computing, industrial HMIs, and network edge devices requiring JEDEC-compliant synchronous DRAM with ZQ calibration and dynamic ODT.

For engineers reviewing the W631GG8NB15I datasheet, W631GG8NB15I pinout, W631GG8NB15I application, or W631GG8NB15I equivalent, key selection criteria include CAS Write Latency (CWL = 5–7), supported CL settings (5–10), tREFI refresh interval (7.8 µs at ≤85°C), on-die termination (RTT_NOM/RTT_WR), and differential DQS timing alignment for source-synchronous data capture.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks, enabling concurrent bank activation and interleaved access. It supports posted CAS with programmable additive latency (AL = 0, CL−1, CL−2), enabling efficient command bus utilization under high bandwidth demand.

The device uses SSTL_15 I/O interface, differential CK/CK# clock inputs synchronized at the cross-point, and bi-directional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. DLL alignment ensures precise DQ–DQS timing, while ZQ calibration maintains output driver and ODT impedance accuracy using an external 240 Ω reference resistor.

Key Specifications

Pinout & Package

VFBGA78 (8 mm × 10.5 mm, 1.0 mm thickness) with 78 solder balls arranged in a 9×9 array (with corner balls omitted), including dedicated VDD/VSS, address/command, data, strobe, and control terminals. Ball pitch is 0.8 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with IS43TR16128B-15KLI and MT41K128M8RH-125:E, the W631GG8NB15I delivers lowest read latency (CL=9) in its speed bin, maintains strict JEDEC DDR3-1333 compliance at industrial temperature, and avoids x16 interface or voltage-transition constraints-making it optimal for cost-sensitive, thermally demanding x8-memory-controller applications.

Availability

W631GG8NB15I is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, and medical diagnostic terminals requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GG8NB15I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and DDR SDRAM for industrial, automotive, and communications markets.

The W631GG8NB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for applications demanding extended temperature operation, JEDEC compliance, and robust signal integrity features like ZQ calibration and dynamic ODT.

FAQ

What is the maximum clock frequency supported by W631GG8NB15I?

The W631GG8NB15I supports a maximum clock frequency of 667 MHz, corresponding to DDR3-1333 data rates (1333 MT/s). This is confirmed by its speed grade designation "-15" and the datasheet's AC timing tables for the -15/15I/15J bin, where fCKMAX = 667 MHz under specified operating conditions. The W631GG8NB15I achieves this with CL=9, tRCD=9, and tRP=9 timing parameters.

Does W631GG8NB15I support automatic self-refresh (ASR)?

Yes, W631GG8NB15I supports Auto Self-Refresh (ASR) as defined in JEDEC JESD79-3F. ASR is enabled via Mode Register MR2 bit A6 (ASR_EN), allowing the DRAM to autonomously manage refresh intervals when temperature exceeds 85°C. For operation up to +95°C, ASR must be enabled or Manual Self-Refresh with extended temperature capability (MR2 A6=0, A7=1) must be used per datasheet Section 8.3.3.3.

What is the function of the ZQ pin on W631GG8NB15I?

The ZQ pin on W631GG8NB15I connects to a 240 Ω ±1% external resistor to ground and enables ZQ calibration. This process adjusts the output driver strength and on-die termination (ODT) resistance values to maintain tight impedance tolerance (±10%) across voltage and temperature variations. Calibration is performed at power-up and can be repeated during operation using the ZQCAL command.

Can W631GG8NB15I operate at 1.35 V (DDR3L voltage)?

No, W631GG8NB15I is specified only for 1.5 V operation (VDD = VDDQ = 1.5 V ± 0.075 V) per Section 2 of the datasheet. It is not a DDR3L-compliant part and does not guarantee functionality or timing at 1.35 V. For 1.35 V designs, consider DDR3L alternatives such as Micron MT41K128M8RH-125:E, which is pin-compatible but has different timing and voltage specifications.

How many banks does W631GG8NB15I have, and why does that matter?

W631GG8NB15I has eight internal banks, as stated in the General Description: "organized as 16,777,216 words × 8 banks × 8 bits." Eight-bank architecture enables bank interleaving-allowing one bank to be precharged while another is active-thereby hiding tRP and tRCD delays and sustaining higher effective bandwidth, especially under mixed read/write workloads common in industrial controllers and networking devices.