Winbond Electronics Corporation W631GG8NB-15 TR

Overview

W631GG8NB-15 TR from Winbond Electronics is a 1 Gbit (128 MB) DDR3 SDRAM organized as 16M × 8 banks × 8 bits, compliant with JEDEC DDR3-1333 (9-9-9) timing, operating at 667 MHz clock frequency with 1.5 V supply, and packaged in a RoHS-compliant 78-ball VFBGA (8 mm × 10.5 mm). It serves as main memory or buffer storage in embedded computing, industrial controllers, and network edge devices requiring reliable high-density synchronous DRAM.

For engineers reviewing the W631GG8NB-15 TR datasheet, W631GG8NB-15 TR pinout, W631GG8NB-15 TR application, or W631GG8NB-15 TR equivalent, key selection considerations include its DDR3-1333 speed grade, -40°C to 95°C industrial temperature range (15I variant), support for programmable CAS Write Latency (CWL = 5–7), ZQ calibration, dynamic on-die termination (ODT), and asynchronous RESET# for robust power-up initialization.

Technical Context

This DDR3 SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, differential CK/CK# clocking synchronized at the cross-point, and source-synchronous DQS/DQS# strobes aligned edge-to-read-data and center-to-write-data. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2) and programmable burst lengths (BL8/BC4).

The device integrates ZQ calibration for output driver and ODT impedance tuning using an external 240 Ω reference resistor, supports both synchronous and dynamic ODT modes with selectable RTT values (RZQ/4, RZQ/2, RZQ/1), and enables system-level timing calibration via write leveling and Multi-Purpose Register (MPR) readout of predefined bit patterns.

Key Specifications

Pinout & Package

W631GG8NB-15 TR uses a 78-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package with 0.8 mm ball pitch, 8 mm × 10.5 mm footprint, and 1.0 mm profile. Ball assignment follows JEDEC-standard DDR3 layout with dedicated VDD/VSS pairs, differential clocks (CK/CK#), data strobes (DQS/DQS#), and command/address groups.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3 SDRAM applications.

Compared with IS43TR16128B-15KBL and MT41K128M8RH-15EIT:E, W631GG8NB-15 TR offers native 8-bit bus alignment and proven thermal performance at 95°C, making it optimal for space-constrained industrial controllers where 16-bit width or DDR3L voltage scaling are unnecessary.

Availability

W631GG8NB-15 TR is available at Aetrix Electronics and suitable for industrial automation, network infrastructure, and medical electronics requiring stable component supply, long-term lifecycle assurance, and RoHS-compliant packaging.

Supply support for W631GG8NB-15 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory solutions, including NOR/NAND Flash, PSRAM, and DDR SDRAM, with ISO 9001 and IATF 16949 certification.

The W631GG8NB series belongs to Winbond's industrial-grade DDR3 SDRAM product line, designed specifically for mission-critical embedded systems demanding extended temperature operation, JEDEC compliance, and long-term supply stability.

FAQ

What is the maximum clock frequency supported by W631GG8NB-15 TR?

W631GG8NB-15 TR supports a maximum clock frequency of 667 MHz, corresponding to the DDR3-1333 speed grade with 9-9-9 timing (t_AA/t_RCD/t_RP = 13.5 ns min). This yields an effective data rate of 1333 MT/s and peak bandwidth of 10.67 GB/s on its 8-bit bus. The -15 suffix explicitly denotes this speed bin and is validated across the full 0°C to 95°C operating range.

Does W631GG8NB-15 TR support automatic self-refresh (ASR)?

Yes, W631GG8NB-15 TR supports Auto Self-Refresh (ASR) via Mode Register 2 (MR2) bit A6. When enabled, ASR automatically adjusts refresh rate based on junction temperature - doubling refresh frequency (t_REFI = 3.9 µS) above 85°C to maintain data retention. This feature is mandatory for operation at 95°C case temperature and eliminates need for external thermal monitoring circuitry.

How is on-die termination (ODT) configured on W631GG8NB-15 TR?

ODT on W631GG8NB-15 TR is configured through Mode Registers MR1 (RTT_NOM) and MR2 (RTT_WR). Supported termination values are RZQ/4 (60 Ω), RZQ/2 (120 Ω), and RZQ/1 (240 Ω), selected via MR1[9:7] and MR2[8:7]. Dynamic ODT (RTT_WR) activates termination only during WRITE bursts, improving signal integrity without increasing idle power consumption.

What package type and dimensions does W631GG8NB-15 TR use?

W631GG8NB-15 TR uses a 78-ball Very Thin Fine-Pitch Ball Grid Array (VFBGA) package measuring 8.0 mm × 10.5 mm with 0.8 mm ball pitch and 1.0 mm maximum height. It complies with JEDEC MO-270AB and is lead-free/RoHS-compliant. The ball map follows standard DDR3 layout with dedicated VDD/VSS pairs and differential signal grouping for CK/CK# and DQS/DQS#.

Can W631GG8NB-15 TR operate at extended temperature ranges like −40°C to 105°C?

No - the W631GG8NB-15 TR variant is rated for 0°C to 95°C case temperature. For −40°C to 105°C operation, the W631GG8NB15J variant must be used. The "15J" suffix indicates industrial-plus grade with extended thermal validation, doubled refresh rate above 85°C, and MR2 configuration for ASR or Manual Self-Refresh mode. W631GG8NB-15 TR lacks qualification and reliability testing for sub-zero or >95°C conditions.