Winbond Electronics Corporation W631GU6KB11I

Overview

W631GU6KB11I from Winbond is a 1G-bit DDR3L SDRAM organized as 8M × 8 banks × 16 bits, operating at 1.35V nominal supply with industrial temperature range (−40°C to +95°C), supporting DDR3L-1866 speed (13-13-13 CL/tRCD/tRP), 8 internal banks, and on-die termination for high-speed memory subsystems in embedded controllers and networking equipment.

For engineers reviewing the W631GU6KB11I datasheet, W631GU6KB11I pinout, W631GU6KB11I application, or W631GU6KB11I equivalent, key selection considerations include its DDR3L-1866 timing compliance, industrial-grade thermal rating, WBGA-96 package, ZQ calibration support, and programmable CAS Write Latency (CWL = 5–9) for system-level timing margin optimization.

Technical Context

This DDR3L SDRAM implements a double-data-rate architecture with 8-bit prefetch, differential CK/CK# clock inputs synchronized at the cross-point, and bi-directional DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2) and programmable read burst ordering (interleaved or nibble sequential).

The device integrates asynchronous RESET# for power-up initialization, dynamic ODT (Rtt_WR) for write-time termination control, multi-purpose register (MPR) for system timing calibration, and ZQ calibration using an external 240Ω reference resistor to adjust output driver and ODT impedance across voltage/temperature variation.

Key Specifications

Pinout & Package

W631GU6KB11I uses a 96-ball WBGA package (9 mm × 13 mm, RoHS-compliant, lead-free). Ball pitch is 0.8 mm. Package conforms to JEDEC MO-270AB standard.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with MT41K128M16JT-125K and IS43TR16128B-125KBL, W631GU6KB11I delivers higher bandwidth (DDR3L-1866 vs. DDR3L-1600), full industrial temperature support with ASR/PASR, and essential calibration infrastructure (MPR, write leveling, dual-rail ZQ), making it optimal for next-generation embedded systems demanding both performance and robustness.

Availability

W631GU6KB11I is available at Aetrix Electronics and suitable for networking infrastructure, industrial automation, medical imaging, and automotive ADAS applications requiring stable component supply, long-lifecycle support, and guaranteed industrial temperature operation.

Supply support for W631GU6KB11I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, communications, and consumer markets.

The W631GU6KB series belongs to Winbond's industrial-grade DDR3L SDRAM product line, designed specifically for embedded systems requiring extended temperature operation, low-power memory subsystems, and JEDEC-compliant high-speed interface reliability.

FAQ

What is the maximum operating frequency supported by W631GU6KB11I?

W631GU6KB11I supports DDR3L-1866 operation at 933 MHz (tCK = 1.07 ns minimum), confirmed by its -11I speed grade designation and CL-13/tRCD-13/tRP-13 timing bin. This frequency is achievable under industrial temperature conditions (−40°C to +95°C) with VDD/VDDQ = 1.283–1.45 V and proper board-level signal integrity design.

Does W631GU6KB11I support backward compatibility with standard 1.5V DDR3 systems?

Yes, W631GU6KB11I supports 1.5V ±0.075V operation per JEDEC DDR3 specification, enabling drop-in replacement in existing DDR3 designs. However, VDD/VDDQ must be set identically (both rails at 1.5V), and mode registers must be reprogrammed for 1.5V timing parameters; the device retains full DDR3L-1866 timing capability only at 1.35V.

How does the ZQ calibration function work on W631GU6KB11I?

W631GU6KB11I performs ZQ calibration by measuring the external 240Ω reference resistor connected to the ZQ pin and adjusting internal output driver and ODT impedances accordingly. Calibration occurs automatically at power-up and can be triggered manually via ZQCL or ZQCS commands; it compensates for process, voltage, and temperature variations to maintain 34Ω ±10% output impedance and 40/60/120Ω ODT settings.

What is the purpose of the Multi-Purpose Register (MPR) in W631GU6KB11I?

The MPR in W631GU6KB11I provides a fixed 128-bit read-only pattern used for system-level timing calibration. When enabled, it outputs a known bit sequence on DQ pins during reads, allowing the memory controller to measure DQ-to-DQS eye width and perform write leveling by adjusting DQS delay until the pattern is correctly captured - a critical step for high-speed DDR3L interface validation.

Can W631GU6KB11I operate in Partial Array Self Refresh (PASR) mode?

Yes, W631GU6KB11I supports PASR via MR2 programming (A1–A3 bits), allowing refresh cycles to target only selected banks (¼, ½, or full array). This reduces IDD6 self-refresh current proportionally - e.g., ¼-array refresh cuts current by ~75% - extending battery life in portable or energy-constrained embedded applications without compromising data retention.