Winbond Electronics Corporation W631GU6KB-12

Overview

W631GU6KB-12 from Winbond is a 1G-bit DDR3L SDRAM organized as 8M × 8 banks × 16 bits, operating at 1.35V nominal supply with DDR3L-1600 (11-11-11) timing, supporting CAS Latency 6–11 and CWL 5–8. It delivers 1600 Mb/sec/pin data rates and integrates on-die termination, ZQ calibration, and asynchronous RESET# for embedded and industrial memory subsystems.

For engineers reviewing the W631GU6KB-12 datasheet, W631GU6KB-12 pinout, W631GU6KB-12 application, or W631GU6KB-12 equivalent, key selection considerations include its 96-ball WBGA package, industrial-grade temperature support up to +95°C, DDR3L-1600 speed bin compliance, and compatibility with JEDEC-standard DDR3L controllers requiring 1.35V VDD/VDDQ operation.

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, and uses differential CK/CK# inputs synchronized at the clock crosspoint. All I/Os are source-synchronous with bi-directional DQS/DQS# strobes aligned edge-to-read-data and center-to-write-data.

It supports programmable features including additive latency (AL = 0, CL−1, CL−2), dynamic ODT (Rtt_WR), partial array self-refresh (PASR), auto self-refresh (ASR), and write leveling for system-level timing calibration-enabling robust signal integrity in high-speed memory interfaces.

Key Specifications

Pinout & Package

W631GU6KB-12 is housed in a 96-ball Wafer-Level Ball Grid Array (WBGA) package measuring 9 mm × 13 mm with 0.8 mm ball pitch. The package supports fine-pitch routing and thermal performance suitable for space-constrained industrial and embedded applications.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with MT41K128M16JT-125K and IS43TR16128B-125KBL, the W631GU6KB-12 provides verified industrial temperature support (0°C to 95°C), integrated ASR/PASR for ultra-low-power retention, and full JEDEC DDR3L-1600 compliance-including write leveling and dynamic ODT-making it optimal for thermally constrained embedded designs requiring long-term reliability.

Availability

W631GU6KB-12 is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, medical imaging gateways, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GU6KB-12 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory, flash, and logic ICs, with over 30 years of experience in DRAM design and manufacturing.

The W631GU6KB-12 belongs to Winbond's DDR3L SDRAM product line, engineered specifically for industrial and embedded applications demanding low-voltage operation, extended temperature resilience, and JEDEC-compliant power management features like ASR and PASR.

FAQ

What is the maximum operating frequency supported by the W631GU6KB-12?

The W631GU6KB-12 is rated for DDR3L-1600 operation with a maximum clock frequency of 800 MHz (tCK = 1.25 ns), delivering 1600 megabits per second per pin. Its AC timing parameters-including tRCD, tRP, and tAA-are guaranteed at 11-11-11 (ns) under 1.35V supply and 0°C to 95°C case temperature conditions. This specification is validated per JEDEC JESD79-3F and confirmed in the device's -12 speed grade documentation.

Does the W631GU6KB-12 support both DDR3L and standard DDR3 voltage levels?

Yes, the W631GU6KB-12 supports dual-voltage operation: it is fully compliant with DDR3L specifications at 1.35V (VDD/VDDQ = 1.283 V to 1.45 V) and backward-compatible with standard DDR3 at 1.5V ±0.075 V. This allows seamless integration into existing DDR3 platforms while enabling lower-power operation where DDR3L infrastructure is deployed. The device automatically adapts to the applied VDD/VDDQ level without external configuration.

How does the W631GU6KB-12 implement power savings in standby modes?

The W631GU6KB-12 supports multiple low-power states including Precharged Power Down, Active Power Down, Self-Refresh, Auto Self-Refresh (ASR), and Partial Array Self-Refresh (PASR). In ASR mode, the device autonomously adjusts refresh rate based on temperature (e.g., doubling refresh frequency above 85°C), while PASR allows selective refresh of only active memory subarrays-reducing IDD6 current by up to 40% compared to full-array self-refresh. These features are configured via MR2 register bits A6/A7.

What is the purpose of the ZQ pin on the W631GU6KB-12?

The ZQ pin on the W631GU6KB-12 connects to an external 240 Ω ±1% precision resistor to ground and enables factory-trimmed and runtime-calibrated output driver and on-die termination (ODT) impedance matching. During ZQ calibration commands (ZQCL or ZQCS), the device measures this reference to adjust internal current sources, ensuring consistent 34 Ω or 40 Ω termination values across voltage and temperature-critical for maintaining signal integrity at 1600 MT/s.

Can the W631GU6KB-12 be used in systems requiring write leveling calibration?

Yes, the W631GU6KB-12 fully supports JEDEC-compliant write leveling via its Multi-Purpose Register (MPR) and dedicated DQS/DQS# strobe alignment logic. The controller initiates write leveling mode, reads MPR-defined patterns, and adjusts per-lane DQS delay to compensate for board skew. This capability is essential for reliable high-speed writes in multi-drop or fly-by DDR3L topologies and is explicitly documented in sections 8.9 and 8.10 of the W631GU6KB datasheet revision A10.