Winbond Electronics Corporation W631GU6KB12I

Overview

W631GU6KB12I from Winbond is a 1G-bit DDR3L SDRAM organized as 8M × 8 banks × 16 bits, operating at 1.35 V nominal supply with industrial temperature range (–40°C to +95°C), compliant with DDR3L-1600 (11-11-11) timing, and packaged in 96-ball WBGA (9 mm × 13 mm). It serves as main memory in embedded controllers, industrial HMIs, and network edge devices requiring low-voltage, high-reliability DRAM.

For engineers reviewing the W631GU6KB12I datasheet, W631GU6KB12I pinout, W631GU6KB12I application, or W631GU6KB12I equivalent, this page delivers verified DDR3L-1600 timing parameters, industrial-grade thermal validation, ZQ calibration support, on-die termination configuration, and ball-mapped I/O roles for layout and signal integrity planning.

Technical Context

This DDR3L SDRAM implements an 8-bank architecture with 8-bit prefetch, differential CK/CK# clocking, and bi-directional DQS/DQS# strobes synchronized to data edges. It supports programmable CAS Latency (CL = 6, 7, 8, 9, 10, 11), CAS Write Latency (CWL = 5–8), and additive latency (AL = 0, CL−1, CL−2) to optimize command bus efficiency.

The device integrates asynchronous RESET#, dynamic ODT (Rtt_WR), multi-purpose register (MPR) for timing calibration, write leveling, and ZQ calibration using an external 240 Ω reference resistor. Its power-down modes include precharged and active variants, with self-refresh current specified at ≤14 mA across –40°C to +85°C.

Key Specifications

Pinout & Package

W631GU6KB12I uses a 96-ball WBGA package (9 mm × 13 mm) with 0.8 mm ball pitch, RoHS-compliant lead-free finish. Ball assignment follows JEDEC-standard DDR3L layout with dedicated VDD/VDDQ/VSS/VSSQ rails, differential clocks (CK/CK#), strobes (DQS/DQS#), address/control (A0–A12, BA0–BA2, CS#, RAS#, CAS#, WE#, CKE, ODT), data (DQ0–DQ15), masks (DMU/DML), and calibration (ZQ, VREFCA, VREFDQ).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L memory applications.

Compared with IS43TR16128B-125KBL and MT41K128M16HA-125:E, W631GU6KB12I offers identical DDR3L-1600 timing and industrial temperature range but with Winbond's optimized ZQ implementation and lower IDD6 self-refresh current (≤14 mA), making it preferable for thermally constrained, battery-backed, or fanless embedded systems.

Availability

W631GU6KB12I is available at Aetrix Electronics and suitable for industrial HMIs, network edge routers, medical imaging control units, and automotive ADAS camera modules requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GU6KB12I includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor manufacturer specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

W631GU6KB12I belongs to Winbond's W631GU6KB DDR3L SDRAM product line, designed specifically for embedded systems demanding industrial-grade reliability, low-voltage operation, and JEDEC-compliant DDR3L interoperability in space- and power-constrained applications.

FAQ

What is the maximum clock frequency supported by W631GU6KB12I?

W631GU6KB12I supports a maximum clock frequency of 800 MHz, corresponding to a data rate of 1600 Mb/s/pin (DDR3L-1600). This is validated under industrial temperature conditions (–40°C to +95°C) with t_AA, t_RCD, and t_RP minimum values of 13.75 ns. The device also supports down-binned operation at lower frequencies with CL=7 or CL=9 if SPD is correctly programmed.

Does W631GU6KB12I support both DDR3 and DDR3L voltage levels?

Yes, W631GU6KB12I is backward compatible with standard DDR3 1.5 V operation (1.425 V–1.575 V) in addition to DDR3L 1.35 V operation (1.283 V–1.45 V). The device automatically adapts internal biasing based on applied VDD/VDDQ; no mode pin or register setting is required to switch between voltage modes.

How is ZQ calibration implemented on W631GU6KB12I?

W631GU6KB12I performs ZQ calibration using an external 240 Ω ±1 % resistor connected between the ZQ pin and ground. Calibration adjusts both output driver strength and on-die termination (ODT) impedances to maintain 34 Ω nominal resistance across voltage and temperature. The ZQ calibration command (ZQCL or ZQCS) must be issued after power-up, reset, or significant voltage/temperature shifts.

What is the purpose of the MPR (Multi-Purpose Register) in W631GU6KB12I?

The MPR in W631GU6KB12I outputs a fixed 0x00000000 pattern on DQ pins during reads, enabling system-level timing margin verification. It is used in conjunction with write leveling and eye-diagram testing to validate setup/hold windows for DQS-to-DQ alignment without requiring external pattern generators or memory controller firmware changes.

Can W631GU6KB12I operate reliably at 95°C case temperature?

Yes, W631GU6KB12I is qualified for continuous operation at T_CASE = –40°C to +95°C. At temperatures above 85°C, the device requires either Auto Self-Refresh (ASR) enabled via MR2 or manual entry into self-refresh mode to maintain the shortened 3.9 µs refresh interval. Failure to do so may result in data retention loss.