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Winbond Electronics Corporation W631GU6KB12I TR

Part No.:
W631GU6KB12I TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
96-TFBGA
Datasheet:
AetrixW631GU6KB12I TR.pdf
Description:
IC DRAM 1GBIT PARALLEL 96WBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,220

Please send an inquiry. Send us your inquiry, and we will respond immediately.

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Product details

Overview

W631GU6KB12I TR from Winbond is a 1G-bit DDR3L SDRAM organized as 8M × 8 banks × 16-bit, operating at 1.35V nominal supply with industrial temperature range (–40°C to +95°C), supporting DDR3L-1600 speed grade (11-11-11 CL/tRCD/tRP), and delivering 1600 MT/s data rate per pin for embedded computing, networking, and industrial control memory subsystems.

For engineers reviewing the W631GU6KB12I TR datasheet, W631GU6KB12I TR pinout, W631GU6KB12I TR application, or W631GU6KB12I TR equivalent, key selection considerations include its industrial-grade thermal rating, programmable CAS Write Latency (CWL = 5–8), on-die termination (ODT) with dynamic Rtt_WR support, ZQ calibration capability, and compatibility with JEDEC DDR3L-1600 timing requirements in 96-ball WBGA package.

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks, differential CK/CK# clock inputs synchronized at the crosspoint, and source-synchronous DQS/DQS# strobes edge-aligned on reads and center-aligned on writes. It supports posted CAS with additive latency (AL = 0, CL–1, CL–2) and programmable burst lengths (BL8/BC4).

The device integrates asynchronous RESET# for power-up initialization, multi-purpose register (MPR) for system-level timing calibration, write leveling for DQ-to-DQS skew compensation, and dual-mode ODT (synchronous and dynamic) with configurable RTT values (Rtt_Nom, Rtt_WR). ZQ calibration uses an external 240Ω resistor to trim output drivers and ODT impedance across voltage and temperature.

Key Specifications

Parameter Value and Actual Design Meaning
Memory Density1 G-bit (8M words × 8 banks × 16 bits)
Data Rate1600 MT/s (DDR3L-1600, fCK = 800 MHz)
Supply VoltageVDD/VDDQ = 1.283 V to 1.45 V (1.35 V typical); backward-compatible to 1.5 V ± 0.075 V
Operating Temperature–40°C ≤ TCASE ≤ +95°C (industrial grade)
CAS Latency (CL)Supports CL = 6, 7, 8, 9, 10, 11 (JEDEC-compliant 11-11-11 timing)
CAS Write Latency (CWL)Programmable CWL = 5, 6, 7, 8 per frequency; WL = AL + CWL
Package96-ball WBGA (9 mm × 13 mm, RoHS-compliant, lead-free)
Refresh IntervaltREFI = 7.8 µs (0°C–85°C), 3.9 µs (85°C–95°C) with ASR/PASR support

Pinout & Package

W631GU6KB12I TR is housed in a 96-ball Wafer-Level Ball Grid Array (WBGA) package measuring 9 mm × 13 mm with 0.8 mm ball pitch. The package uses lead-free, RoHS-compliant materials and supports standard reflow profiles for industrial PCB assembly.

Pin/Terminal Circuit Role Design Meaning
CK / CK#Differential Clock InputLatches all command/address inputs at rising CK/falling CK# crosspoint; defines system timing reference
DQS / DQS#Differential Data StrobeSource-synchronous strobe: edge-aligned with read data, center-aligned with write data
RESET#Asynchronous Reset InputActive-low signal initiating power-up initialization sequence and functional reset independent of clock
ODTOn-Die Termination ControlEnables/disables synchronous ODT; supports dynamic Rtt_WR during write bursts for signal integrity
ZQZQ Calibration ReferenceConnects to external 240Ω ±1% resistor to ground for factory-trimmed output driver and ODT impedance calibration
VREFCA / VREFDQReference Voltage InputsVREFCA sets command/address input threshold; VREFDQ sets data input threshold (0.5 × VDDQ)
A0–A12 / BA0–BA2Address & Bank SelectRow/column/bank addressing; A10/AP also serves as auto-precharge enable or partial array self-refresh control
RAS#, CAS#, WE#, CS#Command Control InputsStandard DDR3 command bus: row activate, column access, write enable, chip select

Key Features

Feature Design Value
Programmable CWL & ALEnables precise write timing alignment across frequency bins (CWL = 5–8; AL = 0, CL–1, CL–2)
Dynamic ODT (Rtt_WR)Activates on-die termination only during write operations to reduce stub reflections and improve write margin
Write Leveling SupportAllows controller to calibrate DQ-to-DQS skew per byte lane using MPR-defined pattern and feedback loop
ZQ CalibrationPerforms periodic impedance trimming of output drivers and ODT using external 240Ω reference resistor
Partial Array Self Refresh (PASR)Reduces self-refresh current by refreshing only active memory banks, extending battery life in low-power modes
Auto Self Refresh (ASR)Automatically switches to self-refresh when temperature exceeds 85°C, maintaining data retention without host intervention

Applications

Industrial HMI Systems Network Edge Routers

Use Scenario: Human-machine interface controllers in factory automation panels requiring deterministic response and long-term reliability under thermal cycling.

IC Role / Device Role / Timing Role: Main system memory buffer for ARM Cortex-A series processors, interfacing via 16-bit DDR3L bus with 1600 MT/s bandwidth.

Use Value: Industrial temperature rating (–40°C to +95°C) and ASR/PASR features ensure uninterrupted operation during ambient fluctuations and extended unattended runtime.

Use Scenario: Packet buffering and forwarding engines in Layer 3 edge routers handling high-throughput traffic with strict jitter constraints.

IC Role / Device Role / Timing Role: High-bandwidth packet memory supporting concurrent read/write access across eight internal banks with bank interleaving.

Use Value: 1600 MT/s data rate and programmable CWL/AL minimize latency variance in time-critical forwarding pipelines.

Medical Imaging Controllers Automated Test Equipment (ATE)

Use Scenario: Real-time image acquisition and preprocessing units in portable ultrasound systems where power efficiency and data integrity are critical.

IC Role / Device Role / Timing Role: Frame buffer memory for FPGA-based image processing pipelines, leveraging burst reads/writes and DM masking for partial updates.

Use Value: Dynamic ODT and write leveling maintain signal integrity across variable trace lengths and board stackups common in compact medical enclosures.

Use Scenario: Pattern memory in high-speed digital ATE platforms performing parallel device testing with tight timing margins.

IC Role / Device Role / Timing Role: Storage for test vectors and expected results, accessed via burst transfers synchronized to system clock domain with minimal setup/hold violations.

Use Value: Programmable tAA/tRCD/tRP (11-11-11) and ZQ calibration ensure consistent timing compliance across production lots and environmental conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Alternative Part Technical Difference Application Difference Selection Advice
IS43TR16128B-125KBLSame density (1G-bit), 96-ball WBGA, DDR3L-1600, but rated –40°C to +85°C (not +95°C); no PASR supportLacks extended temperature capability and partial array self-refresh - unsuitable for high-ambient industrial deploymentsSelect only if operating ambient stays ≤85°C and PASR is not required for power optimization
MT41K128M16HA-125:E1G-bit DDR3L-1600 in 96-ball FBGA (not WBGA); supports –40°C to +95°C, but requires different layout due to 10 mm × 14 mm footprint and 0.8 mm pitchFBGA package demands PCB redesign; includes enhanced refresh management but lacks write leveling MPR modeChoose only when migrating from Micron platform or when FBGA mechanical fit is mandatory

Compared with IS43TR16128B-125KBL and MT41K128M16HA-125:E, W631GU6KB12I TR uniquely combines industrial +95°C operation, PASR, write leveling, and ZQ calibration in a compact 9×13 mm WBGA-enabling drop-in replacement in thermally constrained, power-sensitive designs without sacrificing JEDEC compliance or calibration flexibility.

Availability

W631GU6KB12I TR is available at Aetrix Electronics and suitable for industrial HMI systems, network edge routers, medical imaging controllers, and automated test equipment requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for W631GU6KB12I TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

W631GU6KB12I TR belongs to Winbond's DDR3L SDRAM product line, designed specifically for cost-sensitive, thermally demanding embedded applications requiring JEDEC-compliant low-voltage memory with robust calibration and power management features.

FAQ

What is the maximum operating frequency supported by W631GU6KB12I TR?

W631GU6KB12I TR supports DDR3L-1600 operation with a maximum clock frequency of 800 MHz (1600 MT/s data rate). Its AC timing parameters are validated for 11-11-11 CL/tRCD/tRP operation across the full industrial temperature range (–40°C to +95°C), as specified in JEDEC Standard JESD79-3F.

Does W631GU6KB12I TR support both DDR3L and legacy DDR3 1.5V operation?

Yes, W631GU6KB12I TR is backward compatible with 1.5V DDR3 systems. It operates at 1.35V nominal (1.283V–1.45V) for DDR3L mode but accepts VDD/VDDQ = 1.5V ± 0.075V per JEDEC specification, enabling seamless integration into existing 1.5V infrastructure without hardware modification.

How does the ZQ calibration function work on W631GU6KB12I TR?

W631GU6KB12I TR performs ZQ calibration by referencing an external 240Ω ±1% resistor connected to the ZQ pin. During calibration commands, the device trims its output driver strength and on-die termination (ODT) impedances to match this reference, compensating for process, voltage, and temperature variations to maintain signal integrity.

What is the purpose of the MPR (Multi-Purpose Register) in W631GU6KB12I TR?

The MPR in W631GU6KB12I TR stores a predefined 128-bit calibration pattern used during write leveling and system-level timing validation. When activated via MR3, it outputs this fixed sequence on DQ pins, allowing the memory controller to measure and compensate for DQ-to-DQS skew per byte lane.

Can W631GU6KB12I TR operate in Partial Array Self Refresh (PASR) mode?

Yes, W631GU6KB12I TR supports PASR via MR2 configuration (A6–A8 bits), enabling selective refresh of only active memory banks. This reduces self-refresh current consumption significantly-critical for battery-powered or thermally limited applications where full-array refresh is unnecessary.

W631GU6KB12I TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
96-TFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR3L
Memory Size:
1Gbit
Memory Organization:
64M x 16
Memory Interface:
Parallel
Clock Frequency:
800 MHz
Write Cycle Time - Word, Page:
-
Access Time:
20 ns
Voltage - Supply:
1.283V ~ 1.45V
Operating Temperature:
-40°C ~ 95°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
96-WBGA (9x13)

W631GU6KB12I TR FAQ

1.How can I place an order for W631GU6KB12I TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W631GU6KB12I TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W631GU6KB12I TR reliable?

The price and inventory of W631GU6KB12I TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GU6KB12I TR is usually 5 days.

3.What payment methods are accepted for W631GU6KB12I TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GU6KB12I TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W631GU6KB12I TR?

W631GU6KB12I TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W631GU6KB12I TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W631GU6KB12I TR?

For technical support, including W631GU6KB12I TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GU6KB12I TR requirements.

6.How does Aetrix verify that W631GU6KB12I TR is sourced from the original manufacturer or authorized distributors?

All W631GU6KB12I TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GU6KB12I TR meets industry standards.

7.What is the process for return or replacement of W631GU6KB12I TR?

All W631GU6KB12I TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GU6KB12I TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W631GU6KB12I TR part is unused and in its original packaging.

Return procedure for W631GU6KB12I TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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