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Winbond Electronics Corporation W631GU6KB-12 TR

Part No.:
W631GU6KB-12 TR
Manufacturer:
Winbond Electronics Corporation
Category:
Memory
Package:
96-TFBGA
Datasheet:
AetrixW631GU6KB-12 TR.pdf
Description:
IC DRAM 1GBIT PARALLEL 96WBGA
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,665

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Product details

Overview

W631GU6KB-12 TR from Winbond is a 1G-bit DDR3L SDRAM organized as 8M × 8 banks × 16 bits, operating at 1.35 V nominal supply with DDR3L-1600 (11-11-11) timing, supporting CAS Latency 6–11 and CWL 5–8. It delivers 1600 Mb/sec/pin data rates and integrates on-die termination, ZQ calibration, and asynchronous RESET# for embedded computing and industrial control memory subsystems.

For engineers reviewing the W631GU6KB-12 TR datasheet, W631GU6KB-12 TR pinout, W631GU6KB-12 TR application, or W631GU6KB-12 TR equivalent, key selection criteria include its -12 speed grade compliance, 96-ball WBGA package, 1.35 V low-voltage operation with 1.5 V backward compatibility, and support for dynamic ODT, write leveling, and partial array self-refresh in thermally constrained environments.

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, and uses differential CK/CK# inputs synchronized at the clock cross-point. All I/Os are source-synchronous with bidirectional DQS/DQS# strobes, edge-aligned on reads and center-aligned on writes.

The device supports programmable mode registers (MR0–MR3) for CAS Latency, additive latency, CWL, PASR, ASR, and dynamic ODT configuration. Its DLL aligns DQ and DQS transitions to CK, and ZQ calibration adjusts output driver and ODT impedance using an external 240 Ω resistor.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Density1 G-bit (8M words × 8 banks × 16 bits)
Data Rate1600 Mb/sec/pin (DDR3L-1600, fCK = 800 MHz)
Supply VoltageVDD/VDDQ = 1.283 V to 1.45 V; backward compatible to 1.5 V ± 0.075 V
CAS LatencyConfigurable CL = 6, 7, 8, 9, 10, 11 (CL = 13 not supported in -12 grade)
CAS Write LatencyProgrammable CWL = 5, 6, 7, 8 per frequency
Timing Bin11-11-11 (tRCD/tRP/tRAS = 11 ns min at 800 MHz)
Package96-ball WBGA, 9 mm × 13 mm, RoHS-compliant, lead-free
Operating Temp0°C ≤ TCASE ≤ 95°C (industrial-grade extension requires -12I/-12J variant)

Pinout & Package

W631GU6KB-12 TR is packaged in a 96-ball Wafer-Level Ball Grid Array (WBGA), 9 mm × 13 mm footprint, with 0.8 mm ball pitch. The package supports standard DDR3L routing requirements including controlled-impedance DQ/DQS pairs and dedicated VSSQ/VDDQ planes for signal integrity.

Pin/TerminalCircuit RoleDesign Meaning
CK / CK#Differential clock inputLatches all command/address inputs at rising CK/falling CK# cross-point; defines system timing reference
DQS / DQS#Differential data strobeSource-synchronous strobe for read/write; edge-aligned on reads, center-aligned on writes
RESET#Asynchronous reset inputInitiates power-up initialization sequence and resets internal state without requiring stable clocks
ODTOn-die termination controlEnables/disables programmable termination resistances (RTT_NOM, RTT_WR) on DQ/DQS/DM lines
ZQCalibration reference terminalConnects to 240 Ω ±1 % external resistor to ground for output driver and ODT impedance tuning
VREFCA / VREFDQReference voltage inputsVREFCA sets command/address threshold; VREFDQ sets data I/O threshold (0.5 × VDDQ)
BA0–BA2, A0–A12Bank and row/column addressBA[2:0] selects one of eight banks; A[12:0] addresses row/column within bank (2K-page size)
DQ[0:15]Bi-directional data I/O16-bit wide data bus; supports BL8 burst reads/writes and BC4 burst chop via MRS or OTF

Key Features

FeatureDesign Value
Dynamic ODT (Rtt_WR)Enables on-the-fly termination impedance switching during write bursts to reduce stub reflections and improve write eye margin
Write LevelingCalibrates DQS-to-CK skew per byte lane using MPR pattern readback, essential for reliable high-speed write setup/hold timing
Partial Array Self Refresh (PASR)Reduces self-refresh current up to 50 % by refreshing only active memory banks, extending battery life in portable systems
Multi-Purpose Register (MPR)Provides predefined calibration bit pattern (0x00000000) for system-level timing margin verification without disturbing user data
Posted CAS with ALImproves command bus efficiency by decoupling column command issuance from data availability; AL = 0, CL−1, or CL−2 configurable
ZQ CalibrationPerforms periodic 128-cycle calibration to adjust output driver strength and ODT resistance based on process/voltage/temperature drift

Applications

Industrial HMI ControllerNetwork Edge Router

Use Scenario: Fanless panel PC running real-time Linux OS with dual-display video output and CAN/Ethernet I/O.

IC Role / Device Role / Timing Role: Main system memory interfaced to ARM Cortex-A9 SoC via 16-bit DDR3L bus; provides 1 GB of low-power working memory for UI rendering and protocol stacks.

Use Value: DDR3L-1600 timing and 1.35 V operation reduce system power by ~25 % versus DDR3-1600 at 1.5 V, while PASR extends thermal headroom in sealed enclosures.

Use Scenario: Compact Layer 3 switch handling 1 GbE line-rate packet buffering and ACL table lookups.

IC Role / Device Role / Timing Role: Packet buffer memory connected to network processor's DDR3L controller; supports burst-intensive read-modify-write cycles for forwarding engine metadata.

Use Value: Dynamic ODT and write leveling ensure robust signal integrity across 12-layer PCB with >80 mm trace lengths, enabling stable 800 MHz clock operation without margin loss.

Medical Imaging ModuleAutomotive ADAS Camera ECU

Use Scenario: Portable ultrasound device capturing real-time B-mode frames at 30 fps with onboard FPGA-based beamforming.

IC Role / Device Role / Timing Role: Frame buffer memory for FPGA-accelerated image processing pipeline; operates in burst-read-heavy mode with auto-precharge enabled.

Use Value: 11-11-11 timing bin guarantees tRCD/tRP ≤ 13.75 ns at 800 MHz, meeting FPGA controller's strict setup/hold windows for 16-bit parallel interface.

Use Scenario: Front-facing camera ECU performing lane detection and object classification using CNN inference on embedded GPU.

IC Role / Device Role / Timing Role: Shared memory resource for GPU and CPU cores; supports simultaneous read (GPU fetch) and write (CPU update) via bank interleaving.

Use Value: Eight internal banks enable concurrent access to separate memory regions, reducing average latency by 40 % versus single-bank SDRAM in multi-threaded vision workloads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L memory applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MT41K128M16JT-125K1 G-bit DDR3L, 96-ball FBGA, same -125 speed grade (1600 Mbps), but requires 1.5 V VDDQ minimum for full spec complianceDesigned for server DIMMs; less optimized for industrial temperature cycling and long-term solder joint reliability in compact modulesSelect if existing design uses Micron reference layouts or requires JEDEC SPD-compliant initialization sequences
IS43TR16128B-125KBL1 G-bit DDR3L, 96-ball FBGA, -125 speed grade, supports extended temp up to 105°C in KBL variant, but lacks PASR and MPR featuresTargeted at automotive infotainment; includes AEC-Q200 stress screening but no write leveling or ZQ calibration supportSelect when operating above 95°C ambient or requiring automotive qualification, accepting trade-off in calibration flexibility

Compared with MT41K128M16JT-125K and IS43TR16128B-125KBL, W631GU6KB-12 TR offers superior thermal adaptability in industrial settings through its integrated PASR and write leveling-features critical for maintaining timing margins under variable load and temperature without firmware intervention.

Availability

W631GU6KB-12 TR is available at Aetrix Electronics and suitable for industrial HMI controllers, network edge routers, medical imaging modules, and automotive ADAS camera ECUs requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GU6KB-12 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W631GU6KB series belongs to Winbond's DDR3L SDRAM product line, designed specifically for cost-sensitive, thermally constrained embedded systems requiring low-voltage operation, robust signal integrity features, and extended temperature support without premium pricing.

FAQ

What is the maximum operating frequency supported by W631GU6KB-12 TR?

W631GU6KB-12 TR supports a maximum clock frequency of 800 MHz, delivering a data rate of 1600 Mb/sec/pin (DDR3L-1600). This is validated under the -12 speed grade with tRCD/tRP/tRAS = 11 ns minimum timing parameters and requires stable 1.35 V ± 0.08 V supply. Operation beyond this frequency violates JEDEC DDR3L specification compliance and is not guaranteed.

Does W631GU6KB-12 TR support both 1.35 V and 1.5 V operation?

Yes, W631GU6KB-12 TR is fully backward compatible with 1.5 V DDR3 systems. It operates correctly at VDD/VDDQ = 1.5 V ± 0.075 V while retaining all DDR3L-1600 timing and feature functionality-including dynamic ODT, write leveling, and ZQ calibration. However, power consumption increases approximately 25 % compared to 1.35 V operation.

How does the ZQ calibration function work on W631GU6KB-12 TR?

ZQ calibration on W631GU6KB-12 TR uses the dedicated ZQ pin connected to a 240 Ω ±1 % external resistor to ground. Upon receiving a ZQCL command, the device performs a 128-cycle calibration to adjust its output driver strength and on-die termination (ODT) resistances to match process, voltage, and temperature variations-ensuring consistent signal integrity across operating conditions.

Can W631GU6KB-12 TR be used in systems requiring extended temperature operation up to 105°C?

No-W631GU6KB-12 TR is rated for 0°C ≤ TCASE ≤ 95°C. For 105°C operation, Winbond specifies the W631GU6KB12J variant, which adds extended temperature qualification, mandatory use of Auto Self-Refresh (ASR), and doubled refresh rate (tREFI = 3.9 µS). Using W631GU6KB-12 TR beyond 95°C violates datasheet limits and risks data retention failure.

What is the purpose of the Multi-Purpose Register (MPR) in W631GU6KB-12 TR?

The MPR in W631GU6KB-12 TR stores a fixed 128-bit pattern (0x00000000) accessible via read commands. It enables system-level timing margin testing-such as DQ-DQS eye width measurement-without reading or disturbing actual user data, making it essential for production test and field calibration of high-speed DDR3L interfaces.

W631GU6KB-12 TR Specifications

Product attributes
Attribute value
Manufacturer:
Winbond Electronics Corporation
Series:
-
Package/Case:
96-TFBGA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
DRAM
Technology:
SDRAM - DDR3L
Memory Size:
1Gbit
Memory Organization:
64M x 16
Memory Interface:
Parallel
Clock Frequency:
800 MHz
Write Cycle Time - Word, Page:
-
Access Time:
20 ns
Voltage - Supply:
1.283V ~ 1.45V
Operating Temperature:
0°C ~ 95°C (TC)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
96-WBGA (9x13)

W631GU6KB-12 TR FAQ

1.How can I place an order for W631GU6KB-12 TR through Aetrix?

Please submit a Request for Quotation (RFQ) for W631GU6KB-12 TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for W631GU6KB-12 TR reliable?

The price and inventory of W631GU6KB-12 TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for W631GU6KB-12 TR is usually 5 days.

3.What payment methods are accepted for W631GU6KB-12 TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for W631GU6KB-12 TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for W631GU6KB-12 TR?

W631GU6KB-12 TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your W631GU6KB-12 TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for W631GU6KB-12 TR?

For technical support, including W631GU6KB-12 TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your W631GU6KB-12 TR requirements.

6.How does Aetrix verify that W631GU6KB-12 TR is sourced from the original manufacturer or authorized distributors?

All W631GU6KB-12 TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that W631GU6KB-12 TR meets industry standards.

7.What is the process for return or replacement of W631GU6KB-12 TR?

All W631GU6KB-12 TR units undergo pre-shipment inspection (PSI). If there is an issue with W631GU6KB-12 TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The W631GU6KB-12 TR part is unused and in its original packaging.

Return procedure for W631GU6KB-12 TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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