Winbond Electronics Corporation W631GU6KB-15 TR

Overview

W631GU6KB-15 TR from Winbond is a 1G-bit DDR3L SDRAM organized as 8M × 8 banks × 16-bit, operating at 1.35V nominal supply with DDR3L-1333 (9-9-9) timing, supporting CAS Latency 6/7/8/9/10 and programmable CWL 5–7 for use in embedded computing, industrial controllers, and network edge devices requiring low-voltage memory with JEDEC-compliant refresh and power-down modes.

For engineers reviewing the W631GU6KB-15 TR datasheet, W631GU6KB-15 TR pinout, W631GU6KB-15 TR application, or W631GU6KB-15 TR equivalent, key selection considerations include its -15 speed grade (667 MHz fCKMAX), 96-ball WBGA package, support for ZQ calibration and dynamic ODT, and compatibility with both DDR3L (1.35V) and legacy DDR3 (1.5V) voltage rails.

Technical Context

This DDR3L SDRAM implements an 8-bit prefetch architecture with eight internal banks enabling concurrent access, DLL-aligned DQ/DQS timing, and source-synchronous I/O referenced to differential CK/CK# and DQS/DQS# pairs. It supports posted CAS with additive latency (AL = 0, CL−1, CL−2) and programmable read burst ordering (interleaved or nibble sequential).

Functional operation includes asynchronous RESET# for power-up initialization, on-die termination (ODT) with synchronous and dynamic modes, write leveling for system-level timing calibration, and multi-purpose register (MPR) readout of predefined calibration bit sequences. Refresh is managed via auto-refresh, self-refresh, ASR, and PASR modes with temperature-dependent tREFI intervals.

Key Specifications

Pinout & Package

W631GU6KB-15 TR uses a 96-ball WBGA package (9 mm × 13 mm) with ball pitch of 0.8 mm, designed for surface-mount assembly in space-constrained industrial and networking applications. Pin assignment follows JEDEC-standard DDR3L ballout with dedicated VDD/VDDQ/VSS/VSSQ planes, differential clock (CK/CK#) and strobe (DQS/DQS#) pairs, and function-mapped address/control (A0–A12, BA0–BA2, RAS#/CAS#/WE#, CKE, ODT, RESET#) and data (DQ0–DQ15, DMU/DML, DQSU/DQSU#, DQSL/DQSL#) balls.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L SDRAM applications.

Compared with IS43TR16128B-15KBL, W631GU6KB-15 TR delivers autonomous thermal-aware refresh and lower standby power; versus MT41K128M16JT-125K, it trades peak bandwidth for pin-compatible layout retention and simplified voltage rail design.

Availability

W631GU6KB-15 TR is available at Aetrix Electronics and suitable for industrial PLC controllers, network edge routers, medical imaging front-ends, and smart energy meters requiring stable component supply with guaranteed long-term availability and consistent parametric performance.

Supply support for W631GU6KB-15 TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W631GU6KB series belongs to Winbond's DDR3L SDRAM product line, engineered for low-power, high-reliability embedded systems demanding JEDEC-compliant timing, extended temperature operation, and advanced power management features like ASR and PASR.

FAQ

What voltage rails does the W631GU6KB-15 TR require?

The W631GU6KB-15 TR operates on a single 1.35 V nominal supply (VDD and VDDQ) with allowable range 1.283–1.45 V. It is backward compatible with 1.5 V ±0.075 V systems, allowing reuse of existing DDR3 designs without hardware modification. Both VDD and VDDQ must be supplied from the same regulated rail, and VREFCA/VREFDQ must be set to 0.5 × VDD/VDDQ.

Does the W631GU6KB-15 TR support automatic temperature-compensated refresh?

Yes, the W631GU6KB-15 TR supports Auto Self-Refresh (ASR) mode, which automatically doubles the refresh rate (tREFI = 3.9 µS) when junction temperature exceeds 85°C. This feature eliminates host software overhead for thermal management and ensures data retention reliability in unventilated industrial enclosures where the W631GU6KB-15 TR may operate up to 95°C case temperature.

Can the W631GU6KB-15 TR be used in place of standard DDR3 (1.5V) memory?

Yes, the W631GU6KB-15 TR is fully backward compatible with 1.5 V DDR3 systems. Its DC operating conditions explicitly support VDD/VDDQ = 1.5 V ±0.075 V, and all AC timing parameters meet JEDEC DDR3 specifications at that voltage. No changes to controller initialization or mode register settings are needed when migrating from DDR3 to W631GU6KB-15 TR in existing 1.5 V designs.

What is the purpose of the ZQ pin on the W631GU6KB-15 TR?

The ZQ pin on the W631GU6KB-15 TR connects to an external 240 Ω ±1% precision resistor to ground and enables on-die calibration of output driver strength and ODT termination resistances. This calibration occurs at power-up and periodically during operation to maintain signal integrity across voltage and temperature variations, ensuring consistent 34 Ω driver output and programmable RTT values (60/120/240 Ω) for the W631GU6KB-15 TR.

How does write leveling function in the W631GU6KB-15 TR?

Write leveling in the W631GU6KB-15 TR allows the memory controller to calibrate per-DQS group delay relative to CK by issuing a special MRS command and observing DQS feedback. The W631GU6KB-15 TR responds with a fixed pattern on DQ, enabling the controller to adjust its DQS output timing to align with the W631GU6KB-15 TR's internal sampling window-critical for reliable high-speed writes across mismatched PCB traces.