Winbond Electronics Corporation W631GU6KS-12

Overview

W631GU6KS-12 from Winbond Electronics is a 1 Gb DDR3L SDRAM organized as 8M × 8 banks × 16-bit, operating at 1.35 V nominal supply with DDR3L-1600 (11-11-11) timing, supporting CAS Latency 6–11 and CWL 5–8, and designed for low-power embedded and industrial memory subsystems in SoC-based computing platforms.

For engineers reviewing the W631GU6KS-12 datasheet, W631GU6KS-12 pinout, W631GU6KS-12 application, or W631GU6KS-12 equivalent, key selection considerations include its VFBGA-96 package, -40°C to 95°C industrial temperature range, programmable ODT and ZQ calibration, DLL-enabled source-synchronous DQS alignment, and support for write leveling and multi-purpose register (MPR)-based timing calibration.

Technical Context

This DDR3L SDRAM implements an 8-bank, 8-bit prefetch architecture synchronized to differential CK/CK# inputs, with all commands latched on the CK rising / CK# falling crosspoint. It supports posted CAS, programmable additive latency (AL = 0, CL−1, CL−2), and dynamic ODT (Rtt_WR) for signal integrity during write bursts.

The device integrates asynchronous RESET# for power-up initialization and reset, supports both auto-precharge and manual precharge, and provides multiple power-down modes including precharged and active power-down with CKE gating. Refresh is managed via standard auto-refresh, self-refresh, auto self-refresh (ASR), and partial array self-refresh (PASR).

Key Specifications

Pinout & Package

VFBGA-96 package with 7.5 mm × 13 mm footprint, 0.8 mm ball pitch, and 1.0 mm maximum thickness. Ball assignment follows JEDEC-standard DDR3L layout with dedicated VDD, VDDQ, VSS, VSSQ, VREFCA, and VREFDQ reference nets.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar DDR3L memory applications.

Compared with MT41K128M16JT-125K and IS43TR16128B-125KBL, W631GU6KS-12 offers broader CL/CWL flexibility, full PASR/ASR support up to 95°C, and integrated MPR-based calibration-making it preferred for industrial SoC memory subsystems demanding configurability and thermal resilience.

Availability

W631GU6KS-12 is available at Aetrix Electronics and suitable for industrial HMI panels, network edge routers, medical imaging gateways, and automated test equipment requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for W631GU6KS-12 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Winbond Electronics is a Taiwan-based semiconductor company specializing in specialty memory solutions, including NOR/NAND Flash, SRAM, and DRAM products for industrial, automotive, and communications markets.

The W631GU6KS-12 belongs to Winbond's DDR3L SDRAM product line, engineered for low-voltage, high-reliability embedded memory applications where extended temperature operation, power-aware refresh modes, and JEDEC-compliant signal integrity features are essential.

FAQ

What is the operating voltage range for W631GU6KS-12?

W631GU6KS-12 operates with VDD and VDDQ between 1.283 V and 1.45 V, with 1.35 V as the nominal supply. It is backward compatible to 1.5 V ± 0.075 V, allowing interoperability with legacy DDR3 systems-but full DDR3L-1600 performance and low-power features require 1.35 V operation. The W631GU6KS-12 datasheet specifies absolute maximum ratings and DC operating conditions across its full industrial temperature range.

Does W631GU6KS-12 support write leveling and how is it implemented?

Yes, W631GU6KS-12 supports write leveling via its dedicated DRAM-side protocol that adjusts DQS-to-CK delay per byte lane during initialization. The W631GU6KS-12 uses internal registers and the MRS command to enter write leveling mode, where the memory controller samples DQS edges relative to CK to determine optimal delay taps. This capability is confirmed in sections 8.9 and 8.10 of the official datasheet and is essential for achieving stable 1600 Mbps/pin operation on mismatched PCB layouts.

What package type and ball count does W631GU6KS-12 use?

W631GU6KS-12 uses a VFBGA-96 package measuring 7.5 mm × 13 mm with 1.0 mm maximum height and 0.8 mm ball pitch. The ball map includes dedicated power (VDD, VDDQ), ground (VSS, VSSQ), reference (VREFCA, VREFDQ), and signal (CK/CK#, DQS/DQS#, ODT, ZQ, RESET#) terminals arranged per JEDEC MO-270AB standard. This exact package is specified in Section 12 of the W631GU6KS-12 datasheet and verified on Winbond's official product page.

Can W631GU6KS-12 operate in self-refresh mode at 95°C?

Yes, W631GU6KS-12 supports self-refresh operation up to 95°C with IDD6 ≤ 14 mA, as confirmed in Table 4 (KEY PARAMETERS) of the datasheet. For operation above 85°C, the device requires either Manual Self-Refresh with Extended Temperature Range enabled (MR2[6]=0, MR2[7]=1) or Auto Self-Refresh (ASR) mode (MR2[6]=1). These settings ensure proper refresh rate doubling (tREFI = 3.9 µS) to maintain data retention at elevated junction temperatures-critical for W631GU6KS-12 deployments in sealed industrial enclosures.

What CAS Latency and CWL values are supported by W631GU6KS-12?

W631GU6KS-12 supports CAS Latency (CL) values of 6, 7, 8, 9, 10, and 11, and CAS Write Latency (CWL) values of 5, 6, 7, and 8-each pair validated for DDR3L-1600 operation. These settings are programmable via Mode Registers MR0 and MR2, and their valid combinations are explicitly listed in Table 4 under "Supported CL Settings" and "Supported CWL Settings." The W631GU6KS-12 datasheet confirms CL=11/CWL=8 yields tAA = 13.75 ns and tRCD = 13.75 ns at 800 MHz.